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    PTFB211503FL Search Results

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    PTFB211503FL Price and Stock

    MACOM PTFB211503FL-V2-R0

    RF MOSFET LDMOS 30V H-34288-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFB211503FL-V2-R0 50
    • 1 -
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    • 100 $95.195
    • 1000 $95.195
    • 10000 $95.195
    		Buy Now

    MACOM PTFB211503FL-V2-R250

    RF MOSFET LDMOS 30V H-34288-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFB211503FL-V2-R250 Reel 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $86.98428
    • 10000 $86.98428
    		Buy Now

    PTFB211503FL Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFB211503FL-V2-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288-4 Original PDF
    PTFB211503FLV2R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288-4 Original PDF
    PTFB211503FL-V2-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTFB211503FLV2R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTFB211503FL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL2012

    Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL2012 TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221

    TL117

    Abstract: c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL117 c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802

    TL139

    Abstract: c803
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, H-33288-6 H-34288-4/2 TL139 c803

    TL140

    Abstract: No abstract text available
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL140

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF