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    PTFB192503EL V1 Search Results

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    PTFB192503EL V1 Price and Stock

    MACOM PTFB192503EL-V1-R0

    RF MOSFET LDMOS 30V H-33288-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFB192503EL-V1-R0 50
    • 1 -
    • 10 -
    • 100 $118.484
    • 1000 $118.484
    • 10000 $118.484
    Buy Now

    MACOM PTFB192503EL-V1-R250

    RF MOSFET LDMOS 30V H-33288-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFB192503EL-V1-R250 Reel 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $108.59524
    • 10000 $108.59524
    Buy Now

    PTFB192503EL V1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFB192503EL-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-33288-6 Original PDF
    PTFB192503ELV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-33288-6 Original PDF
    PTFB192503ELV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTFB192503EL V1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tl241

    Abstract: TL239 TRANSISTOR tl131 7827 Transistor TL131 TL245 P100ECT-ND tl113 445-1474-2-ND TL235
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    PDF PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6, H-34288-6, tl241 TL239 TRANSISTOR tl131 7827 Transistor TL131 TL245 P100ECT-ND tl113 445-1474-2-ND TL235

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    PDF PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231

    PTFB192503EL V1

    Abstract: No abstract text available
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


    Original
    PDF PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original
    PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117