PTB23006U Search Results

PTB23006U Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTB23006U		Philips Semiconductors	Microwave Power Transistor		Original	PDF
PTB23006U		Philips Semiconductors	NPN silicon planar epitaxial microwave power transistor		Scan	PDF
PTB23006U		Philips Semiconductors	Microwave power transistor		Scan	PDF

PTB23006U Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PTB23006U Abstract: MLC718 SOT440A Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors	Original	PDF	PTB23006U SCA53 127147/00/02/pp12 PTB23006U MLC718 SOT440A
MRF648 Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC	Original	PDF	2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
SD1446 Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31	Original	PDF	BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Philips TdA3619 Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.	Original	PDF
transistor c 5855 Abstract: PTB23006U SC15 Text: Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U FEATURES QUICK REFERENCE DATA • Very high power gain Microwave performance up to T mb = 25 °C in a common-base class C • Diffused emitter ballasting resistors improve ruggedness	OCR Scan	PDF	PTB23006U OT440A OT44QA. transistor c 5855 PTB23006U SC15
Philips Semiconductors Selection Guide Abstract: LTE42005S BLS2731-10 Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR	OCR Scan	PDF	RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S
274 transistor Abstract: transistor c 5855 Text: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and	OCR Scan	PDF	OT440A PTB23006U Erie1250-003 GA244 274 transistor transistor c 5855
LFE15 Abstract: LAE4001R BLS2731-50 BLS2731-10 Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50	OCR Scan	PDF	BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R
transistor c 5855 Abstract: TRANSISTOR LIST 417 TRANSISTOR npn epitaxial planar high voltage transistor epitaxial B44 transistor use of 417 TRANSISTOR Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and	OCR Scan	PDF	FO-41B PTB23006U 711002b 711062b 00T433b FO-41B. transistor c 5855 TRANSISTOR LIST 417 TRANSISTOR npn epitaxial planar high voltage transistor epitaxial B44 transistor use of 417 TRANSISTOR
transistor c 5855 Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44 Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C	OCR Scan	PDF	PTB23006U FO-41B 7110fl2b D0T433b FO-41B. ocma37 transistor c 5855 npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44