Untitled
Abstract: No abstract text available
Text: W83194BR-PT WINBOND STEPLESS VIA PT MAIN CLOCK GENERATOR -I- Publication Release Date:April 13, 2005 Revision 1.1 W83194BR-PT Table of Contents1. GENERAL DESCRIPTION . 1
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W83194BR-PT
W83194BR-PT
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400M
Abstract: SEL24 W83194BG-911 W83194BR-911
Text: W83194BR-911 W83194BG-911 Winbond STEPLESS VIA PT/PM MAIN CLOCK GENERATOR Date: Mar/22/2006 Revision: 0.71 W83194BR-911, W83194BG-911 STEPLESS CLOCK FOR VIA PT/PM CHIPSET W83194BR-911/W83195BG-911 Data Sheet Revision History PAGES DATES VERSION WEB VERSION
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W83194BR-911
W83194BG-911
Mar/22/2006
W83194BR-911,
W83194BR-911/W83195BG-911
400M
SEL24
W83194BG-911
W83194BR-911
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Untitled
Abstract: No abstract text available
Text: W83194BR-903 WINBOND STEPLESS VIA PT/PM MAIN CLOCK GENERATOR -I- Publication Release Date: April 13, 2005 Revision 1.1 W83194BR-903 Table of Contents1. GENERAL DESCRIPTION . 1
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W83194BR-903
W83194BR-903
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SEL24
Abstract: W83194BR-903
Text: W83194BR-903 WINBOND STEPLESS VIA PT/PM MAIN CLOCK GENERATOR -I- Publication Release Date: December 23, 2004 Revision 1.0 W83194BR-903 Revision History PAGES DATES VERSION WEB VERSION MAIN CONTENTS n.a. All of the versions before 0.50 are for internal use.
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W83194BR-903
SEL24
W83194BR-903
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W83194BR-903
Abstract: PSKE SEL24 W83194BG-903
Text: W83194BR-903 & W83194BG-903 STEPLESS VIA PT/PM MAIN CLOCK GENERATOR Date: 5/2/2006 Revision: 1.0 W83194BR-903/W83194BG-903 W83194BR-903 Datasheet Revision History PAGES DATES VERSION WEB VERSION MAIN CONTENTS n.a. All of the versions before 0.50 are for internal
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W83194BR-903
W83194BG-903
W83194BR-903/W83194BG-903
W83194BR-903
W83194BR-903/W831948
PSKE
SEL24
W83194BG-903
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g30n60
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXGA30N60C3
IXGP30N60C3
40-100kHz
IC110
O-263
O-220
30N60C3
g30n60
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30N60C3
Abstract: g30n60c3 G30N60 igbt g30n60c3 IXGA30N60C3D4 IXGP30N60C3D4
Text: Preliminary Technical Information GenX3TM 600V IGBT With Diode IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE sat ≤ tfi(typ) = High Speed PT IGBTs for 40-100kHz switching 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXGA30N60C3D4
IXGP30N60C3D4
IC110
40-100kHz
O-263
O-220
8-06B
30N60C3
g30n60c3
G30N60
igbt g30n60c3
IXGA30N60C3D4
IXGP30N60C3D4
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12AWG
Abstract: 480VAC R1035
Text: PT&PY SERIES 3-PHASE P.C.B. FILTERS INTRODUCTIONS COMPONENT 1. Applications: Electric equipment, UPS, machine tool, copy machine, automation equipment, robot, AC motor drive 2. Voltage rating: 250/480VAC 3. Operating frequency: 50/60Hz PART NO. Cx1 uF Cx2(uF) Cy(uF) L(mH) Z(VDC) SA(VDC)
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250/480VAC
50/60Hz
30PTW6
30PYT8
30PTW6
250VAC)
30PYG8
480VAC)
12AWG
480VAC
R1035
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SOT-23 marking l31
Abstract: HSMS-2850 HSMS-285A HSMS-285X HSMS-2860 HSMS-286X MARKING- L31 L30 SOT143 HSMS2850
Text: 3 Absolute Maximum Ratings, Ta = +25°C, Single Diode Symbol Absolute Maximum[1] Parameter HSMS-285x HSMS-286x 75 mW 250 mW PT Total Device Dissipation[2] PIV Peak Inverse Voltage 2.0 V 4.0 V TJ Junction Temperature 150°C 150°C TSTG Storage Temperature -65°C to 150°C
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HSMS-285x
HSMS-286x
OT-23
OT-143
5966-0928E,
5966-2939E
5966-4283E
SOT-23 marking l31
HSMS-2850
HSMS-285A
HSMS-285X
HSMS-2860
HSMS-286X
MARKING- L31
L30 SOT143
HSMS2850
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G30N60
Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710
Text: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
40-100kHz
IC110
O-263
O-220
G30N60
IXGH30N60C3
30N60C3
30n60c3 TO-247
IXGA30N60C3
g30n60c3
siemens igbt 20A
30n60
ixgp30n60c3
RG 710
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NTE220
Abstract: No abstract text available
Text: 15 AM High Density T1/E1 Framer With Integrated VT/TU & DS3/E3 Mappers and M13 MUX ASSP Telecom Standard Product Data Sheet Released y, 14 Se pt em TEMUX 84E3 be r, 20 04 06 :4 8: PM8320 Data Sheet Released Issue No. 4: December, 2003 Do wn lo ad ed by Co
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PMC-2030446,
PM8320
NTE220
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IXGA30N60C3
Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3
Text: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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40-100kHz
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
IC110
O-263
IC110
O-220AB
O-247
30N60C3
IXGH30N60C3
G30N60C3
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IXGP30N60C3D4
Abstract: IXGA30N60C3D4 g30N60
Text: IXGA30N60C3D4 IXGP30N60C3D4 GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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40-100kHz
IXGA30N60C3D4
IXGP30N60C3D4
IC110
O-263
IC110
O-220AB
8-06B
IXGP30N60C3D4
g30N60
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ixgh30n60c3d1
Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
O-247)
O-268
O-247
600v 30A fast recovery diode
g30n60c3
Tvj-150
30N60C3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA30N60C3D4
IXGP30N60C3D4
40-100kHz
O-263
O-220AB
8-06B
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
40-100kHz
O-263
O-220AB
30N60C3
5-02-11-A
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
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IXGH30N60C3D1
Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
ID110
IXGH30N60C3D1
30N60C3
G30N60
g30n60c3
30C17
IXGT30N60C3D1
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Untitled
Abstract: No abstract text available
Text: :4 5: 23 AM RM5231A Microprocessor with 32-Bit System Bus Data Sheet Released es da y, 14 Se pt em be r, 20 04 06 RM5231A Data Sheet Proprietary and Confidential Released Issue 4, February 2004 Do wn lo ad ed by Co nt e nt Te a m of P ar tm in er In co
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RM5231ATM
32-Bit
PMC-2002174,
RM5231A
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Untitled
Abstract: No abstract text available
Text: FLL200IB-L FLL200IB-2 , FLL200IB-3 L-tìand Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 83.3 w Total Power Dissipation pt
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FLL200IB-L
FLL200IB-2
FLL200IB-3
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FEE430
Abstract: FEE 160 FEE532 FEE160-2 25CC PF500 UL-94-V0 FEE425 FEE509 fee 222-3-2
Text: PT EuC H lN IsT ReO L *C O MEP A EN Y A FEE 100 - 900 Series Low Cost Pow er Inductors , Inductances de puissance série économique K ey Features Caractéristiques Application schematics for Low Cost Pow er Inductors Schém as d'application pour inductance de puissance
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PF500
FEE430
FEE 160
FEE532
FEE160-2
25CC
UL-94-V0
FEE425
FEE509
fee 222-3-2
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bd657
Abstract: amf panel
Text: 4 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED 19 RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. LOC DI ST REVISIONS FT ALL INTERNATIONAL RIGHTS RESERVED. ZONE LTR DE SC RI PT IO N OBS -5 S REDWN PER BD6577 REV PER EC 0320-82-97
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BD6577
MIL-M-14,
1471-G
/ssrv02
t4023/amf
0J73/ednimod
bd657
amf panel
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Untitled
Abstract: No abstract text available
Text: bei Type 2JS / 3JS Time-lag Fuse Series JS Apr2013D HF ptì 5 X 15mm Glass Tube R 0H S 6 Compliant 2JS / 3JS Series, 5 x 15mm Time-lag Fuse oTO us <^ > C € Description 5x15 mm Time -lag ,glass tube body cartridge fuse designed, approved and com plied w ith UL and CSA
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Apr2013D
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Untitled
Abstract: No abstract text available
Text: 7 6 1 70107 3 1 CKT. SIZE NOTFS: 1 M ATERIAL: PO LY ES TE R , COLOR: BLACK 9 4V -0 2) HOUSING TO BE USED WITH TERMINAL PT . NO. 70021-»*»» 3) SEE CHART FOR CIRCUIT 5) PANEL THICKNESS 0.8 D /.032 - (2.361/.093 6) SEE SHEET 3 FOR MOUNTING HOLE DIMENSIONS.
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SD-70107-0036-0059
8107X6
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