ATF-38143
Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT-343 4 lead SC-70
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ATF-38143
OT-343
SC-70)
5968-7868E
ATF-38143
ATF-38143-BLK
ATF-38143-TR1
ATF-38143-TR2
k5 z2
Cgd01
D 1709 N 20
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nec 8772
Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
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NE32584C
NE32584C
NE32584C-S
NE32584C-T1
24-Hour
nec 8772
LD 7522
142.58
NE32584C-S
NE32584C-T1
cha 9935
K 4017
j50 0513 5
5252 f 1001
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pseudomorphic HEMT
Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm
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FPD6836SOT343
FPD6836SOT3
OT343
FPD6836SOT343
mx750
1850MHz)
18dBm
2002/95/EC)
FPD6836SOT343E
FPD6836SOT343E-AG
pseudomorphic HEMT
TRANSISTOR c 5578 B
TRANSISTOR BC 135
0604HQ
OT343
3.5GHz BJT
bc 548 transistor
transistor bc 731
transistor bc 564
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FPD750SOT89
Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD750SOT89
25dBm
39dBm
FPD750SOT89
25mx1500m
FPD750SOT89E:
FPD750SOT89CE-BC
FPD750SOT89CE-BE
FPD750SOT89CE-BG
BC 148 TRANSISTOR DATASHEET
SSG 23 TRANSISTOR
TRANSISTOR BC 135
FPD750SOT89E
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0603 footprint IPC
Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE-BD
FPD3000SOT89CE-BE
FPD3000SOT89CE-BG
0603 footprint IPC
FPD3000
TRANSISTOR BC 157
FPD3000SOT89E
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FPD1500
Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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FPD1500DFN
FPD1500DFN
mx750
27dBm
85GHz
42dBm
85GHz)
EB1500DFN-BA
FPD1500
SSG 23 TRANSISTOR
stu 407
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 135
TRANSISTOR BC 157
FPD750SOT89
InGaAs hemt biasing
EB1500DFN-BE
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LX5561LL
Abstract: LX5561
Text: LX5561 TM InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET The LX5561 is a low noise amplifier LNA for WLAN applications in the 2.4-2.5 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process.
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LX5561
LX5561
LX5561LL
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MAX 8985
Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
Q62705-K0603
CFH120-10
Q62705-K0604
MAX 8985
pseudomorphic HEMT
ta 7176 datasheet
8772 P
CFH120
CFH120-08
CFH120-10
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k0604
Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
Text: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,
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Q62705-K0603
Q62705-K0604
GSO05553
k0604
MAX 8985
zo 607 p 408
8772 P
pseudomorphic HEMT
GSO05553
S221
Q62705-K0603
ZO 607 MA 135
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02S11
Abstract: max 7176
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB
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NE321000
NE321000
24-Hour
02S11
max 7176
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CFS0303-SB-0G0T
Abstract: TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473
Text: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA
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23-May-06
CFS0303-SB
OT-343)
2400MHz
3500MHz
CFS0303-SB-0G0T
TRANSISTOR BD 137-10
PB-CFS0303-SB-00B0
transistor 2440
bd 9473
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Untitled
Abstract: No abstract text available
Text: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low
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ATF-50189
ATF-50189
AV02-0049EN
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pseudomorphic HEMT
Abstract: CFA0103 CFA0103L CFA0103-L
Text: Low Noise GaAs FETs CFA0103 July 2006 - Rev 31-Jul-06 Features High Gain Super Low Noise Pseudomorphic HEMT 70 Mil Hermetic Package Applications Satellite Receivers Point-to-Point Radio Receivers Commercial Communications Defense Electronics General Description
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CFA0103
31-Jul-06
CFA0103-L
pseudomorphic HEMT
CFA0103
CFA0103L
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NE24200
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip
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NE24200
NE24200
24-Hour
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Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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ec2612 phemt
Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
ec2612 phemt
pHEMT transistor 30GHz
MAR 618 transistor
LS 9814
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sot marking a1 353
Abstract: ATF-34143-BLKG ATF-34143 A004R ATF-33143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 LA 7873
Text: ATF-34143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Based on its featured performance, ATF-34143 is ideal for the first stage of base station LNA due to the excellent combination of low noise figure and high linearity[1]. The device is also suitable for
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ATF-34143
OT-343
SC-70)
5989-1916EN
5989-3746EN
sot marking a1 353
ATF-34143-BLKG
A004R
ATF-33143
ATF-34143-BLK
ATF-34143-TR1
ATF-34143-TR2
LA 7873
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Untitled
Abstract: No abstract text available
Text: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
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LP6836SOT343
LP6836SOT343
LP6836
OT343
SC-70)
MIL-STD-1686
MIL-HDBK-263.
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low noise pseudomorphic
Abstract: No abstract text available
Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE
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SPF 455
Abstract: SPF-1576 SPF 455 H 5 SPF-1676
Text: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available
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SPF-1576,
SPF-1576
SPF 455
SPF 455 H 5
SPF-1676
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Untitled
Abstract: No abstract text available
Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted
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OCR Scan
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CF003
CF003-03
CF003
CF003-01
n745D3
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Untitled
Abstract: No abstract text available
Text: CF004 Series GaAs Chips Specifications T^ = 25°C CF004-01 CF004-02 CF004-03 Ion Implanted Epitaxial Pseudomorphic HEMT Active Layer Frequency (GHz) Units Optimum Noise Figure ^D S 3-0 V, Iq s 10 mA 18.0 dB Ga Gain at NFopt V DS = 3.0 Vi lDS = 10mA 18.0
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CF004
CF004-01
CF004-02
CF004-03
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Untitled
Abstract: No abstract text available
Text: T485BVCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier • InGaAs/AIGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz
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T485BVCO
QS9000
IS09001
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Untitled
Abstract: No abstract text available
Text: M w T T - 3 /-Z 5 - H 4 26 GHz Low Noise PSEUDOMORPHIC HEMT GaAs FET [PRELIMINARY 10/91] MICROWAVE T e c h n o l o g y niCROUAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES “i 50h w I ] m b i a m c m odooisi isa • nruv
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12GHZ
356-----------CHIP
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