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    POWER TRANSISTOR VCE 600 VOLT Search Results

    POWER TRANSISTOR VCE 600 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR VCE 600 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3420 transistor

    Abstract: C3420 2SC3420 Bl c3420
    Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)


    Original     		PDF 2SC3420 c3420 transistor C3420 2SC3420 Bl c3420

    C3420

    Abstract: c3420 transistor 2SC3420 Bl c3420
    Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)


    Original     		PDF 2SC3420 C3420 c3420 transistor 2SC3420 Bl c3420

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802

    TOSHIBA Transistor Silicon PNP Epitaxial Type

    Abstract: 2SA1802 2SC4681 A1802
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 2SC4681 A1802

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) -50mA QW-R201-045

    7B1A

    Abstract: 2SA1802 2SC4681 C4681
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802 7B1A 2SA1802 2SC4681 C4681

    Untitled

    Abstract: No abstract text available
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    2SA1300

    Abstract: 2sA1300 transistor transistor 2A pnp
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) QW-R201-045 2SA1300 2sA1300 transistor transistor 2A pnp

    C4681

    Abstract: 7B1A 2SA1802 2SC4681
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802 C4681 7B1A 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802

    2SA1802

    Abstract: A1802 toshiba last digit of year "medium power Amplifier" 7B1A 2SC4681
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681 2SA1802 A1802 toshiba last digit of year "medium power Amplifier" 7B1A 2SC4681

    c3420 transistor

    Abstract: C3420 Bl c3420 2SC3420
    Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3420 c3420 transistor C3420 Bl c3420 2SC3420

    2SB1658

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION •High Collector Current -IC= -5A ·High DC Current Gain: hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage: VCE sat = -0.15V(Max.)@IC= -1A APPLICATIONS


    Original     		PDF 2SB1658 2SB1658

    2SA1300

    Abstract: QW-R208-012
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) OT-89 QW-R208-012 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) OT-89 -50mA QW-R208-012

    MARKING CODE B3 sot-89

    Abstract: MY sot-89 NPN medium power transistor in a SOT package
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		PDF KSC2982 KSC2982 OT-89 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DTF MARKING CODE B3 sot-89 MY sot-89 NPN medium power transistor in a SOT package

    KSC2982

    Abstract: No abstract text available
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		PDF KSC2982 OT-89 KSC2982

    2SD2583

    Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS


    Original     		PDF 2SD2583 2SD2583 Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN

    2SC4781

    Abstract: No abstract text available
    Text: 2SC4781 TO SH IBA TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4781 MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hjpE Linearity : hjpE (i) = 200~600 (VCe = 2V, Ic = 1A) : hFE(2) = 300 (Typ.) (VCE = 2V, I c = 4A)


    OCR Scan     		PDF 2SC4781 2SC4781