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    POWER SEMICONDUCTOR Search Results

    POWER SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PowerPoint-Presenter Renesas Electronics Corporation PowerPoint Presenter Reference Design Visit Renesas Electronics Corporation
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    POWER SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tca2465

    Abstract: tca 770 TLE4202 TLE5205 cross TLE4203 TCA 2465 diagnostic interface mini servo motor BTS 770 G TLE5208-6G
    Text: Smart Power Bridges Bridges DC Motor Drivers s Stepper Motor Drivers s TRILITHIC s Power Semiconductors, Smart Power Bridges Power Motor Bridges Principle M M Yesterday: Relays Today: Power Transistors and ICs Power Semiconductors, Smart Power Bridges M Smart Power Bridges


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    PDF P-DIP20 P-DSO24 P-SIP15 SIP-9/15 DIP-18 4202B 5203G 5204G 5205G tca2465 tca 770 TLE4202 TLE5205 cross TLE4203 TCA 2465 diagnostic interface mini servo motor BTS 770 G TLE5208-6G

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


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    PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    05Vdc

    Abstract: HIP6018B HIP6018BCB
    Text: [ /Title HIP60 18B /Subject (Advan ced PWM and Dual Linear Power Control) /Autho /Keywords (InterCorporation, Semiconductor, Intelligent Power, Computer Power, Pentium Power, Pentium II Power, HIP6018B Data Sheet Advanced PWM and Dual Linear Power Control


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    PDF HIP60 HIP6018B HIP6018B 50kHz HIP6018BCB 1-888-INTERSIL 05Vdc HIP6018BCB

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    MOSFET cross-reference

    Abstract: optocoupler crossreference Power MOSFET Cross Reference Guide fairchild mosfet selection guide IGBT cross-reference logic ic databook cfl kit using 2 mosfet fairchild optocoupler cross reference fairchild Igbts guide Catalog Bipolar Transistor
    Text: Fairchild Semiconductor International Power Solutions Collateral List May 2002 CROSS-DIVISIONAL Literature Piece General Power Conversion Ad reprint Power Distributions Ad reprint Power Management Ad reprint Power Minimization Ad reprint Power Solutions Positioning Ad reprint


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    LPDDR2

    Abstract: samsung lpddr2 samsung* lpddr2 lpddr2 datasheet IDD3P lpddr2 samsung Datasheet LPDDR2 lpddr2 samsung datasheet lp-ddr2 Lpddr2 Idd3n
    Text: Samsung LPDDR2 Power Calculation July 2010 Mobile Planning Samsung Semiconductor Basic Power Equation table ‰ The Basic Rule for Calculating DRAM Power Power calculation method Background power Activate power CORE [{IDD0 – IDD3N*tRASmin+IDD2N*tRPmin }/tRCmin]


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    smd-transistor DATA BOOK

    Abstract: smd transistor book smd transistor fh SIPMOS application note smd transistors SMD BOOK BOOK SMD
    Text: APPLICATIONS POWER SEMICONDUCTORS Jürgen Gladigau ● Otto Voggenreiter Power transistors in SMD packages: Calculating power dissipation the right way More and more power transistors are being offered in surface mount variants of power packages. When calculating maximum permissible power dissipation,


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    PDF O-251 OT-223 smd-transistor DATA BOOK smd transistor book smd transistor fh SIPMOS application note smd transistors SMD BOOK BOOK SMD

    220v AC voltage stabilizer schematic diagram

    Abstract: smps circuit diagram 450w DATASHEET OF IC 741C ATX smps troubleshooting atx power supply 450W schematic PWM 220v ac stabilizer aPPLICATION NOTES ON KA3525A ka3842a application note atx power supply 450W SG6105
    Text: POWER S O L U T I O N S Fairchild’s Power Solutions Fairchild Semiconductor is a global leader in delivering energy-efficient power analog, power discrete, and optoelectronic solutions. These products maximize energy savings in power-sensitive applications such as power


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    mosfet base induction heat circuit

    Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
    Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map


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    Power MOSFET, toshiba

    Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
    Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series


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    PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    "RF Power Modules"

    Abstract: BLW85 bfq34 RF Power Modules BLF147 BLF244 BLW83 BLW33 BLF175 bfg97
    Text: DISCRETE SEMICONDUCTORS Line-ups RF & Microwave Power Transistors and RF Power Modules Supersedes data of 1998 Feb 5 2000 Mar 02 Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Line-ups SSB TRANSMITTERS 1.5 to 30 MHz INPUT POWER


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    PDF BLV10 BLW87 BLV20 BLW83 BLV11 BLW85 BLW87 BLW83 BLW76 "RF Power Modules" BLW85 bfq34 RF Power Modules BLF147 BLF244 BLW33 BLF175 bfg97

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    a20 tssop-8

    Abstract: HN58X24512FPIAG Hitachi DSA00279 csp48
    Text: HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs and EEPROM February, 2002 Product Marketing Team System Memory Business Unit Semiconductor and Integrated Circuits Hitachi, Ltd. HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs HITACHI Low Power SRAM and EEPROM


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    PDF HN58V257A HN58C256A HN58C257A HN58S65A HN58V65A HN58V66A HN58V1001 HN58C1001 HN58S256A HN58V256A a20 tssop-8 HN58X24512FPIAG Hitachi DSA00279 csp48

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


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    power IGBT MOSFET transistor GTO SCR di

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
    Text: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power


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    PM20CSJ060 application note

    Abstract: PM30RSF060 mitsubishi PM30CSJ060 pm25rsb120 mitsubishi PM50RSA120 IPM Inverter pm400dsa060 PM25RSK120 optocoupler PC817 BPC-817
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES 6.0 Introduction to Intelligent Power Modules IPM Mitsubishi Intelligent Power Modules (IPMs) are advanced hybrid power devices that combine high speed, low loss IGBTs with optimized gate drive and protection circuitry. Highly effective over-current


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    2SC3822

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3822 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·For power switching ,power amplifier, power driver and electronic supply applications PINNING PIN


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    PDF 2SC3822 O-220Fa 2SC3822

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


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    PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    ixys

    Abstract: No abstract text available
    Text: IXYS Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding requirements of power electronic applications. Our product portfolio of Power MOSFETs, IGBTs, SCHOTTKYs, FREDs, Thyristors,


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    KA-40W

    Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
    Text: & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity


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    PDF LM391 0W-81Ì 0W-41Ì TL/H/7146-13 LM391N; b501124 KA-40W LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N

    Untitled

    Abstract: No abstract text available
    Text: IXYS High Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding require­ ments of power electronic applications. Our product portfolio o f Power MOSFETs, IGBTs, FREDs, Thyristors,


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    transistor RJH 30

    Abstract: LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA
    Text: N a tio n a l LM391 & Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity


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    PDF LM391 LM391N; TL/H/7146-13 b50ii24 transistor RJH 30 LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA