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    POWER MOSFET P-CHANNEL N-CHANNEL DUAL Search Results

    POWER MOSFET P-CHANNEL N-CHANNEL DUAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK03R4DPA-00#J5A Renesas Electronics Corporation Built In Sbd Dual N-Channel Power MOSFET Visit Renesas Electronics Corporation
    EL7252CSZ Renesas Electronics Corporation Dual Input, High Speed, Dual Channel Power MOSFET Driver Visit Renesas Electronics Corporation
    EL7252CSZ-T7 Renesas Electronics Corporation Dual Input, High Speed, Dual Channel Power MOSFET Driver Visit Renesas Electronics Corporation
    EL7252CSZ-T13 Renesas Electronics Corporation Dual Input, High Speed, Dual Channel Power MOSFET Driver Visit Renesas Electronics Corporation
    EL7242CSZ-T13 Renesas Electronics Corporation Dual Input, High Speed, Dual Channel Power MOSFET Driver Visit Renesas Electronics Corporation

    POWER MOSFET P-CHANNEL N-CHANNEL DUAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode 77a

    Abstract: p-channel mosfet 78 DIODE SMD KRF7317 77A DIODE
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7317 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Symbol N-Channel P-Channel Unit


    Original     		PDF KRF7317 -100A/ smd diode 77a p-channel mosfet 78 DIODE SMD KRF7317 77A DIODE

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		PDF FDS8958B FDS8958B

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7343 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 55 -55 V ID 4.7


    Original     		PDF KRF7343 -100A/

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		PDF SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    p channel mosfet 100v

    Abstract: 100V Single p-Channel MOSFET KRF7350 n-channel 100v 100A 100V Single P-Channel HEXFET MOSFET P-channel MOSFET VGS -25V 15a 50v p-channel mosfet Dual N P-Channel 100V 100v P-Channel MOSFET P-channel MOSFET 50V, 10 A rds
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7350 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 100 -100 V ID 2.1 -1.5 Continuous Drain Current Ta = 70


    Original     		PDF KRF7350 -100A/ p channel mosfet 100v 100V Single p-Channel MOSFET KRF7350 n-channel 100v 100A 100V Single P-Channel HEXFET MOSFET P-channel MOSFET VGS -25V 15a 50v p-channel mosfet Dual N P-Channel 100V 100v P-Channel MOSFET P-channel MOSFET 50V, 10 A rds

    96364

    Abstract: No abstract text available
    Text: PD - 96364 AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		PDF AUIRF7319Q 96364

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4501ADY 2002/95/EC Si4501ADY-T1-E3 Si4501ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Transistor Mosfet N-Ch 30V

    Abstract: STS7C4F30L
    Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω


    Original     		PDF STS7C4F30L STS7C4F30L Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V


    Original     		PDF UTM4052 -40V/-6A O-252-4 UTM4052L-S08-R UTM4052G-S08-R UTM4052L-TN4-T UTM4052G-TN4-T QW-R502-137

    STS7C4F30L

    Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
    Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω


    Original     		PDF STS7C4F30L STS7C4F30L P Channel STripFET Transistor Mosfet N-Ch 30V

    MOSFET dual SOP-8

    Abstract: 40v 7.5a P-Channel N-Channel To-252-4 DIODE 2524 UTM4052 2524
    Text: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V


    Original     		PDF UTM4052 -40V/-6A O-252-4 UTM4052L-S08-R UTM4052G-S08-R UTM4052L-TN4-R UTM4052G-TN4-R UTM4052L-TN4-T UTM4052G-TN4-T MOSFET dual SOP-8 40v 7.5a P-Channel N-Channel To-252-4 DIODE 2524 UTM4052 2524

    IRF P CHANNEL MOSFET

    Abstract: MOSFET 150 N IRF N-P Channel mosfet
    Text: PD - 96106 IRF7307QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7307QPbF EIA-481 EIA-541. IRF P CHANNEL MOSFET MOSFET 150 N IRF N-P Channel mosfet

    MOSFET N-CH 200V

    Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
    Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω


    Original     		PDF STS1C1S250 STS1C1S250 MOSFET N-CH 200V MOSFET P-CH 250V 5A sd 150 zener diode

    STS7C4F30L

    Abstract: No abstract text available
    Text: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.070Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω


    Original     		PDF STS7C4F30L STS7C4F30L

    IRf 48 MOSFET

    Abstract: transistor irf 649 irf7105pbf f710 IRF7101 MS-012AA
    Text: PD - 95164 IRF7105PbF Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET


    Original     		PDF IRF7105PbF EIA-481 EIA-541. IRf 48 MOSFET transistor irf 649 irf7105pbf f710 IRF7101 MS-012AA

    AN-994

    Abstract: IRF7107
    Text: PD - 9.1099B IRF7107 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 3 6 4 5 N-Ch


    Original     		PDF 1099B IRF7107 AN-994 IRF7107

    Untitled

    Abstract: No abstract text available
    Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQS4900 -300V, FQS4900 FQS4900TF

    STS7C4F30L

    Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V STSC4F30L
    Text: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.018Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STSC4F30L(N-Channel) STSC4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.060 Ω 70 A 70 A TYPICAL RDS(on) (N-Channel) = 0.018 Ω


    Original     		PDF STS7C4F30L STSC4F30L STS7C4F30L P Channel STripFET Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7307 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel


    Original     		PDF KRF7307 -100A/

    STS3C3F30L

    Abstract: No abstract text available
    Text: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ


    Original     		PDF STS3C3F30L STS3C3F30L

    KRF7309

    Abstract: smd diode nh
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7309 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel


    Original     		PDF KRF7309 -100A/ KRF7309 smd diode nh

    IRF7319

    Abstract: 49AA
    Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch


    OCR Scan     		PDF IRF7319 IRF7319 49AA

    RF710

    Abstract: irf7317
    Text: PD - 9.1568B In terna tional IOR Rectifier IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MO SFET un di g N-Ch P-Ch 20V -2 0 V ~m D1 1 m~-


    OCR Scan     		PDF 1568B IRF7317 RF710 irf7317

    IRF9952

    Abstract: No abstract text available
    Text: PD - 9.1561 A International IG R Rectifier IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N-CHANNEL M ÜSF ET


    OCR Scan     		PDF IRF9952 IRF7309 IRF7509 IRF9952