95A 640
Abstract: APT0406 APT0501 APT0502 1320UJ
Text: APTC60AM24SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM24SCTG
temp00
95A 640
APT0406
APT0501
APT0502
1320UJ
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83m max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 1 4 Q2
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APTC60AM83B1G
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Untitled
Abstract: No abstract text available
Text: APTC60AM24SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 600V RDSon = 24m max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
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APTC60AM24SCTG
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Untitled
Abstract: No abstract text available
Text: APTC60AM24SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM24SCTG
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Untitled
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 CR1 1 4
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APTC60AM83B1G
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300V dc dc boost converter
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4
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APTC60AM83B1G
case150
300V dc dc boost converter
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Untitled
Abstract: No abstract text available
Text: STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600V - 0.17Ω - 17A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS @ TJmax STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
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STP/F21NM60ND-STW21NM60ND
STB21NM60ND-STI21NM60ND
O-220/FP/D2PAK/I2PAK/TO-247
STB21NM60ND
STI21NM60ND
STF21NM60ND
STP21NM60ND
STW21NM60ND
O-220
O-220FP
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F30NM60ND
Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Text: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND
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STP/F30NM60ND-STW30NM60ND
STB30NM60ND-STI30NM60ND
O-220/FP/D2PAK/I2PAK/TO-247
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
O-220
O-220FP
F30NM60ND
30NM60ND
F30NM60ND-STW30NM60ND
f30nm60
STB30NM60ND-STI30NM60ND
STP30NM60ND
STW30NM60ND
STP30
30NM60N
STF30NM60ND
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Untitled
Abstract: No abstract text available
Text: APT106N60B2C6 600V 106A 0.035 COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel) G • Popular T-MAX Package
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APT106N60B2C6
O-247
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apt60dq60
Abstract: APT106N60B2C6
Text: APT106N60B2C6 600V 106A 0.035Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package
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APT106N60B2C6
O-247
apt60dq60
APT106N60B2C6
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Untitled
Abstract: No abstract text available
Text: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT77N60BC6
APT77N60SC6
O-247
Diss20
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Untitled
Abstract: No abstract text available
Text: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT53N60BC6
APT53N60SC6
O-247
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Untitled
Abstract: No abstract text available
Text: APT30N60KC6 600V 30A COOLMOS .125 Super Junction MOSFET Power Semiconductors TO-220 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated G S All Ratings per die: TC = 25°C unless otherwise specified.
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APT30N60KC6
O-220
Jun42
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ce 2826 ic
Abstract: No abstract text available
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
ce 2826 ic
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APT77N60BC6
Abstract: APT77N60SC6
Text: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT77N60BC6
APT77N60SC6
O-247
APT77N60BC6
APT77N60SC6
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APT38N60BC6
Abstract: APT38N60B
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
APT38N60B
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Untitled
Abstract: No abstract text available
Text: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.
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APT30N60BC6
APT30N60SC6
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DD2030
Abstract: diode 53a APT53N60BC6 APT53N60B
Text: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT53N60BC6
APT53N60SC6
O-247
DD2030
diode 53a
APT53N60B
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Untitled
Abstract: No abstract text available
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
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APT38N60B
Abstract: max2849
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
APT38N60B
max2849
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Mosfet 30A 400v
Abstract: j649 mosfet 600V 30A
Text: APT30N60KC6 600V 30A COOLMOS .125Ω Super Junction MOSFET Power Semiconductors TO-220 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated G S All Ratings per die: TC = 25°C unless otherwise specified.
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APT30N60KC6
O-220
Mosfet 30A 400v
j649
mosfet 600V 30A
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DV15
Abstract: Infineon CoolMOS APT30N60BC6 APT30N60B
Text: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.
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APT30N60BC6
APT30N60SC6
Operating020
DV15
Infineon CoolMOS
APT30N60BC6
APT30N60B
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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IRGDDN600K06
Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Text: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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OCR Scan
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IRGDDN600K06
IRGRDN600K06
C-1016
MA55455
30V 600A igbt
600A 500v igbt
mosfet 600V 600A circuit
INT-A-PAK Package
int-a-pak
OF IGBT 600A 600V
10 600a - 030
DOUBLE INT-A-PAK Package
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