Untitled
Abstract: No abstract text available
Text: 1U AC-DC power supply High power AC-DC power supply FETA series FETA series High power AC-DC power supply High High h power power High High h efficiency effi fficiiency y High High power pow power er 2500W 250 2500W 0W FETA2500B-48 (FETA2 (FE TA2500 500B-4
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FETA2500B-48)
FETA2500B
AC230V
FETA2500B-36
FETA2500B-48
AC170ã
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highside switch array
Abstract: toshiba marking code logic
Text: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, it can directly drive a power
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TPD2005F
TPD2005F
highside switch array
toshiba marking code logic
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highside switch array
Abstract: TPD2005F
Text: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, it can directly drive a power
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TPD2005F
TPD2005F
highside switch array
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FET marking code
Abstract: list of n channel fet marking code c 9 toshiba TOSHIBA DIODE GLASS TPD2005F SSOP24-P-300
Text: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, it can directly drive a power
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TPD2005F
TPD2005F
FET marking code
list of n channel fet
marking code c 9 toshiba
TOSHIBA DIODE GLASS
SSOP24-P-300
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"gallium nitride" mosfet
Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
Text: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can
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reqM5113
LM5113
"gallium nitride" mosfet
48V MOSFET
GaN power MOSFET
"gallium nitride"
Half-Bridge Driver
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analog switch circuit using mosfet
Abstract: Thermal Shut Down Functioned MOSFET BD6520 BD6520F BD6522 BD6522F
Text: TECHNICAL NOTE Power Management Switch IC Series for PCs and Digital Consumer Product Large Current Output Power Management Switch ICs BD6520F, BD6522F ●Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.
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BD6520F,
BD6522F
analog switch circuit using mosfet
Thermal Shut Down Functioned MOSFET
BD6520
BD6520F
BD6522
BD6522F
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09029EAT12
Abstract: 6522 mos BD6520F BD6522F MOS 6520 40 pin
Text: Power Management Switch IC Series for PCs and Digital Consumer Product Large Current Output Power Management Switch ICs BD6520F,BD6522F No.09029EAT12 Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.
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BD6520F
BD6522F
09029EAT12
R0039A
09029EAT12
6522 mos
BD6522F
MOS 6520 40 pin
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Power Management Switch IC Series for PCs and Digital Consumer Product Large Current Output Power Management Switch ICs BD6520F, BD6522F ●Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.
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BD6520F,
BD6522F
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE POWER MANAGEMENT QUICK SELECTION GUIDE Switching Regulators, LDOs, Power Modules, FET Drivers, Analog Controllers INTERSIL POWER MANAGEMENT SOLUTIONS A HERITAGE OF POWERING INNOVATION Learn how Intersil’s power management technologies have
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LC-112
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schematic diagram 48v ac regulator uc3842
Abstract: schematic diagram 48v dc motor speed controller 24v dc power supply with uc3842 UC3842 mosfet driver uc3842 half bridge schematic diagram 48v regulator uc3842 48v to 24v buck zvs flyback driver HIP4082 uc3842 AC-DC application
Text: Intersil Industrial and Communications Power Product Selection Guide Integrated FET Regulators Non-Isolated PWM Controllers Isolated PWM Controllers Power MOSFET Drivers Hot Plug Controllers ORing FET Controllers Supervisors Power Sequencers 2 | www.intersil.com/power
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1-888-INTERSIL
LC-043
schematic diagram 48v ac regulator uc3842
schematic diagram 48v dc motor speed controller
24v dc power supply with uc3842
UC3842 mosfet driver
uc3842 half bridge
schematic diagram 48v regulator uc3842
48v to 24v buck
zvs flyback driver
HIP4082
uc3842 AC-DC application
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CFK2062-P5
Abstract: CFK2062-P5-000T
Text: CFK2062-P5 Product Specifications July 1997 1 of 4 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram
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CFK2062-P5
CFK2062-P5
CFK2062-P5-000T
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Untitled
Abstract: No abstract text available
Text: CFK2062-P1 Product Specifications May 1996 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram
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CFK2062-P1
CFK2062-P1
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CFK2062-P1
Abstract: CFK2062-P1-000T
Text: CFK2062-P1 Product Specifications July 1997 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram
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CFK2062-P1
CFK2062-P1
CFK2062-P1-000T
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PT 4115
Abstract: CFK2062-P1 CFK2062-P1-000T
Text: CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Product Specifications December 1997 1 of 4 Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram
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CFK2062-P1
CFK2062-P1
PT 4115
CFK2062-P1-000T
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NE900474-13
Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
Text: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001
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NE9004
NE900474-13,
NE9004
NE900
NE9000,
NE9001
NE9002.
24-Hour
NE900474-13
NE900474-15
NE900400G
NE9002
AN-1001
NE9000
NE9001
UM1000
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16PIN
Abstract: ACPR600 CXG1030N Formula1
Text: CXG1030N Power Amplifier for PHS Description The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply 3.0 V • Low current consumption
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CXG1030N
CXG1030N
16-pin
600kHz
16PIN
SSOP-16P-L01
SSOP016-P-0044
ACPR600
Formula1
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7586 GE
Abstract: CFK2162-P1 CFK2162-P1-000T
Text: 0.8-1.0 GHz +34 dBm Power GaAs FET November 2007 - Rev 15-Nov-07 CFK2162-P1 Features Package Diagram High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package
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15-Nov-07
CFK2162-P1
CFK2162-P1
7586 GE
CFK2162-P1-000T
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Untitled
Abstract: No abstract text available
Text: 0.8-1.0 GHz +34 dBm Power GaAs FET July 2007 - Rev 31-Jul-07 CFK2162-P1 Features Package Diagram High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package
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31-Jul-07
CFK2162-P1
CFK2162-P1
CFK2162-P1-000T
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MSC8004
Abstract: No abstract text available
Text: MSC8004 HIGH POWER GaAs FET FET PACKAGE TYPE 30 FEATURES INCLUDE: • High Output Power: P1dB = 1.6 W TYP @ 12 GHz • High power gain: GLP = 5 dB (TYP) @ 12 GHz • High power added efficiency: Hadd = 18% (TYP) @ 12 GHz APPLICATIONS: • S to Ku Band Power Amplifiers
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MSC8004
MSC8004
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Untitled
Abstract: No abstract text available
Text: SONY CXG101 ON Power Amplifier for PHS Description The CXG1010N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • High output power 21.5 dBm • Positive power supply drive
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CXG101
CXG1010N
16-pin
CXG1010N
16PIN
SSOP-16P-L01
SSOP016-P-0044
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toshiba marking code logic
Abstract: TPD2005F highside switch array
Text: TO SH IBA TPD2005F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT TPD2005F HIGH-SIDE POWER SWITCH ARRAY 8 CHANNELS for MOTORS, SOLENOIDS, and LAMP DRIVES The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power 1C, it
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TPD2005F
TPD2005F
SSOP24-P-3QO-1
toshiba marking code logic
highside switch array
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sony power amplifier
Abstract: No abstract text available
Text: SONY CXG1030N Power Amplifier for PHS Description 16 pin SSOP Plastic The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply
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CXG1030N
16-pin
CXG1030N
16PIN
SSOP-16P-L01
6-P-0044
sony power amplifier
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n channel fet array
Abstract: TPD2007F
Text: TO SH IBA TPD2007F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT TPD2007F LOW-SIDE POWER SWITCH ARRAY 8 CHANNELS for MOTORS, SOLENOIDS, and LAMP DRIVES The TPD2007F is an 8-channel low-side switch array for vertical power MOS FET output. A monolithic power 1C, it
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OCR Scan
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TPD2007F
TPD2007F
SSOP24-P-300-1
n channel fet array
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Untitled
Abstract: No abstract text available
Text: CFK2062-P5 ÊSH9t Product S p ecificatio n s M ay 1996 iof4 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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OCR Scan
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CFK2062-P5
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