10DL2C
Abstract: 10DL2C41A
Text: 10DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200V Average Output Rectified Current : IO = 10A
|
Original
|
PDF
|
10DL2C41A
10DL2C
10DL2C41A
|
Untitled
Abstract: No abstract text available
Text: 10DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200V l Average Output Rectified Current : IO = 10A
|
Original
|
PDF
|
10DL2C41A
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MBRD10U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=10A. ・Repetitive Peak Reverse Voltage B : VRRM=200V.
|
Original
|
PDF
|
MBRD10U200CT
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MBRD10U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K L D : IO=10A. ・Repetitive Peak Reverse Voltage B : VRRM=200V.
|
Original
|
PDF
|
MBRD10U200CT
|
mbrf10u200
Abstract: SCHOTTKY 10A 200V
Text: SEMICONDUCTOR MBRF10U200 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES ・Average Output Rectified Current : IO= 10A. ・Repetitive Peak Reverse Voltage : VRRM= 200V. ・Fast Reverse Recovery Time : trr=35ns.
|
Original
|
PDF
|
MBRF10U200
mbrf10u200
SCHOTTKY 10A 200V
|
mbrf*10u200ct
Abstract: MBRF10u200ct MBRF10U200CTA
Text: SEMICONDUCTOR MBRF10U200CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current DIM B E G : IO=10A. ・Repetitive Peak Reverse Voltage : VRRM=200V.
|
Original
|
PDF
|
MBRF10U200CTA
mbrf*10u200ct
MBRF10u200ct
MBRF10U200CTA
|
MBRF10200CT
Abstract: No abstract text available
Text: SEMICONDUCTOR MBRF10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=200V. K
|
Original
|
PDF
|
MBRF10200CT
MBRF10200CT
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 200V / 10A Z3PK10200DH OUTLINE DIMENSIONS Case : Z3PAK FEATURES * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF
|
Original
|
PDF
|
Z3PK10200DH
|
MBR10200CT
Abstract: No abstract text available
Text: SEMICONDUCTOR MBR10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=10A. G B Repetitive Peak Reverse Voltage Q : VRRM=200V. I
|
Original
|
PDF
|
MBR10200CT
MBR10200CT
|
Z3PK10200DH
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 200V / 10A Z3PK10200DH OUTLINE DIMENSIONS Case : Z3PAK FEATURES * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF
|
Original
|
PDF
|
Z3PK10200DH
Z3PK10200DH
|
Z3PK10200H
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 200V / 10A Z3PK10200H OUTLINE DIMENSIONS FEATURES Case : Z3PAK * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF
|
Original
|
PDF
|
Z3PK10200H
Z3PK10200H
|
Untitled
Abstract: No abstract text available
Text: SuperFETTM FFB10UP20S Ultrafast Recovery Power Rectifier Features Applications • Ultrafast with Soft Recovery : < 45ns • Output Rectifiers • High Reverse Voltage : VRRM = 200V • Switching Mode Power Supply • Avalanche Energy Rated • Free-wheeling diode for motor application
|
Original
|
PDF
|
FFB10UP20S
FFB10UP20S
|
FULL WAVE RECTIFIER CIRCUITS
Abstract: design of rectifier circuit HALF WAVE RECTIFIER CIRCUITS Ultrafast RECTIFIER DIODES ON Semiconductor DATA ULTRAFAST SOFT RECOVERY RECTIFIER high power rectifier diode single List of rectifier diode power rectifiers rectifier cites test FFB10UP20S
Text: SuperFETTM FFB10UP20S Ultrafast Recovery Power Rectifier Features Applications • Ultrafast with Soft Recovery : < 45ns • Output Rectifiers • High Reverse Voltage : VRRM = 200V • Switching Mode Power Supply • Avalanche Energy Rated • Free-wheeling diode for motor application
|
Original
|
PDF
|
FFB10UP20S
FFB10UP20S
FULL WAVE RECTIFIER CIRCUITS
design of rectifier circuit
HALF WAVE RECTIFIER CIRCUITS
Ultrafast RECTIFIER DIODES ON Semiconductor DATA
ULTRAFAST SOFT RECOVERY RECTIFIER
high power rectifier diode single
List of rectifier diode
power rectifiers
rectifier cites test
|
MBRF10200CT
Abstract: mbrf10200
Text: SEMICONDUCTOR MBRF10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=200V. K Fast Reverse Recovery Time : trr=35ns.
|
Original
|
PDF
|
MBRF10200CT
MBRF10200CT
mbrf10200
|
|
|
Z3PK10200D
Abstract: No abstract text available
Text: Z3PK10200D 10Amp Low VF Schottky Barrier Diode 200V - Z3PAK OUTLINE DIMENSIONS Case : Z3PAK Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability
|
Original
|
PDF
|
Z3PK10200D
10Amp
|
mbrf*10u200ct
Abstract: MBRF10u200ct MBRF10U200 011TJ
Text: SEMICONDUCTOR MBRF10U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.
|
Original
|
PDF
|
MBRF10U200CT
mbrf*10u200ct
MBRF10u200ct
MBRF10U200
011TJ
|
MBRF10U200CTA
Abstract: mbrf*10u200ct MBRF10u200ct
Text: SEMICONDUCTOR MBRF10U200CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.
|
Original
|
PDF
|
MBRF10U200CTA
MBRF10U200CTA
mbrf*10u200ct
MBRF10u200ct
|
MBRF20U200CTA
Abstract: MBRF20U200 MBRF20U200CT mbrf*20u200ct
Text: SEMICONDUCTOR MBRF20U200CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.
|
Original
|
PDF
|
MBRF20U200CTA
MBRF20U200CTA
MBRF20U200
MBRF20U200CT
mbrf*20u200ct
|
mbrf*20u200ct
Abstract: MBRF20U200 MBRF20U200CT
Text: SEMICONDUCTOR MBRF20U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.
|
Original
|
PDF
|
MBRF20U200CT
-30A/ã
mbrf*20u200ct
MBRF20U200
MBRF20U200CT
|
Untitled
Abstract: No abstract text available
Text: PD-94150B HFB25HJ20 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF AV = 25A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
|
Original
|
PDF
|
PD-94150B
HFB25HJ20
|
10DL2C
Abstract: 10DL2C41A
Text: TOSHIBA 10DL2C41A TO SHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C41A Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIO N CONVERTER & CHOPPER APPLICATIO N 10.3M A X ., • Repetitive Peak Reverse Voltage : V rrm = 200V • Average Output Rectified Current : Iq = 10A
|
OCR Scan
|
PDF
|
10DL2C41A
961001EAA2'
10DL2C
10DL2C41A
|
Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 30KF10E 30KF20E 30KF10B 30KF20B 33A/100~ 200V/trr : 50nsec 5.31.209 4.7Î.185) FEATURES i °Similar to TO-247AC Case r 15.91626) . 3.61.142) Ï4Ù 54) 0 Ultra - Fast Recovery » Low Forward Voltage Drop 3.41.134) 3.ÔI.118) o Low Power Loss, High
|
OCR Scan
|
PDF
|
30KF10E
30KF20E
30KF10B
30KF20B
3A/100~
00V/trr
50nsec
O-247AC
30KF10E
0KF10B
|
IN50B
Abstract: 12MF10
Text: FAST RECOVERY DIODE 12MF10 12MF20 i3A/50~200v/trr :50nsec FEATURES ° Hermetically Sealed Case • High Reliability Device 4.5 0 7 7 • Ultra - Fast Recovery • Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Capability + »100 Volts thru 400 Volts Types Available
|
OCR Scan
|
PDF
|
12MF10
12MF20
i3A/50
200v/trr
50nsec
bbl5123
00G2213
IN50B
12MF10
|
10DF1
Abstract: 10DF2 n439
Text: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability
|
OCR Scan
|
PDF
|
A/100--
00V/trr
200nsec
10DF1
10DF2
10DF1
10DF2
n439
|
