2w,GaAs FET
Abstract: 6401FN
Text: MA06401FN 2W GaAs Power Amplifier 4.5 - 6.9 GHz Advanced Information FEATURES •= •= •= •= •= •= •= •= Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical
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MA06401FN
6401FN
MA06401FN
2w,GaAs FET
6401FN
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ITT6401FM
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance
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ITT6401FM
6401FM
ITT6401FM
360mA
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2w,GaAs FET
Abstract: ITT6401D
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
360mA
2w,GaAs FET
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Untitled
Abstract: No abstract text available
Text: 2 Watt P1dB, 1 GHz to 2 GHz, Medium Power Amplifier, 35 dB Gain, 45 dBm IP3, 1.5 dB NF, SMA TECHNICAL DATA SHEET PE15A4025 PE15A4025 is a L-band coaxial 2W high dynamic range power amplifier, operating in the 1 to 2 GHz frequency range and designed for low noise and high linearity applications. The amplifier offers 33 dBm of P1dB and high 35 dB small signal gain,
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PE15A4025
PE15A4025
ier-35-db-gain-45-dbm-ip3-sma-pe15a4025-p
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RFPA2126
Abstract: 2252-03
Text: RFPA2126 RFPA2126Single-Stage Power Amplifier SINGLE-STAGE POWER AMPLIFIER 2W, 700MHz TO 2200MHz Package: DFN, 6-Pin, 5.0mm x 6.0mm 6 VBIAS 1 NC Features AMP WCDMA Power = 25dBm at -45dBc RFIN 2 Gain = 13.7dB at 1.96GHz P1dB =33.8dBm at 1.96GHz
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RFPA2126Single-Stage
RFPA2126
700MHz
2200MHz
25dBm
-45dBc
96GHz
96GHz
RFPA2126
DS120830
2252-03
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Untitled
Abstract: No abstract text available
Text: RFPA2235 RFPA2235Single-Stage Power Amplifier 2W, 700MHz to 2700MHz Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ Package Style: DFN, 12-Pin, 4mm x 5mm VBIAS 1 Features WCDMA Power at 2140MHz = 20dBm with -60dBc ACPR Gain = 13dB at 2140MHz P1dB = 32.5dBm at 2140MHz
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RFPA2235
RFPA2235Single-Stage
700MHz
2700MHz
12-Pin,
2140MHz
20dBm
-60dBc
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RK73Z1ETTP
Abstract: 0402CS-1N0XJL 915 MHz RFID MAAP-007649-0001A2 M513 MAAP-007649-000100 MAAP-007649-0001A1 RK73Z1JTTD SN63 0402CS-2N2XJL
Text: MAAP-007649-000100 Ultra Linear 2W Power Amplifier 800 to 1000 MHz Features • • • • • • • • • Rev. V3 Product Image HIGH Gain: 19 dB TYP. HIGH P1dB: +34.0 dBm (TYP.) HIGH OIP3: +49.5 dBm (TYP.) 50% PAE @ P1dB Optimized Performance for RFID Bands
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MAAP-007649-000100
260oC
MAAP-007649-000100
RK73Z1ETTP
0402CS-1N0XJL
915 MHz RFID
MAAP-007649-0001A2
M513
MAAP-007649-0001A1
RK73Z1JTTD
SN63
0402CS-2N2XJL
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tanaka TS3332LD
Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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12-May-08
P1032-BD
MIL-STD-883
parD-000V
XP1032-BD-EV1
XP1032-BD
tanaka TS3332LD
XP1032-BD-EV1
tanaka TS3332LD epoxy
DM6030HK
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XP1055-BD
Abstract: tanaka TS3332LD epoxy
Text: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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12-May-08
P1055-BD
MIL-STD-883
parD-000V
XP1055-BD-EV1
XP1055-BD
tanaka TS3332LD epoxy
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XP1032-BD
Abstract: XP1032-BD-EV1 DM6030HK
Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD January 2010 - Rev 29-Jan-10 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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P1032-BD
29-Jan-10
MIL-STD-883
XP1032-BD
sP1032-BD-EV1
XP1032-BD
XP1032-BD-EV1
DM6030HK
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Untitled
Abstract: No abstract text available
Text: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD March 2009 - Rev 03-Mar-09 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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P1055-BD
03-Mar-09
MIL-STD-883
XP1055-BD-EV1
XP1055-BD
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Untitled
Abstract: No abstract text available
Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD March 2009 - Rev 04-Mar-09 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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P1032-BD
04-Mar-09
MIL-STD-883
XP1032-BD-EV1
XP1032-BD
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Untitled
Abstract: No abstract text available
Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD December 2009 - Rev 03-Dec-09 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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P1032-BD
03-Dec-09
MIL-STD-883
provP1032-BD-EV1
XP1032-BD
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915 MHz RFID reader
Abstract: No abstract text available
Text: MAAP-007649-000100 Ultra Linear 2W Power Amplifier 800 to 1000 MHz Product Image Features • • • • • • • • • • Rev. V4 HIGH Gain: 19 dB TYP. HIGH P1dB: +34.0 dBm (TYP.) HIGH OIP3: +49.5 dBm (TYP.) 50% PAE @ P1dB Optimized Performance for RFID Bands
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MAAP-007649-000100
260oC
MAAP-007649-000100
915 MHz RFID reader
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Untitled
Abstract: No abstract text available
Text: SPA-120-30-02-SMA DATA SHEET 6 GHz to 12 GHz, Medium Power Broadband Amplifier with 2 Watt, 37 dB Gain and SMA SPA-120-30-02-SMA is a 2W wideband coaxial power amplifier operating in the 6 to 12 GHz frequency range. The amplifier offers 33 dBm min of P1db and high
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SPA-120-30-02-SMA
SPA-120-30-02-SMA
r-broadband-amplifier-spa-120-30-02-sma-p
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Untitled
Abstract: No abstract text available
Text: SBBA-060-44-02-SMA DATA SHEET 2 GHz to 6 GHz, 44 dB Gain Broadband High Gain Amplifier with 2 Watt and SMA SBBA-060-44-02-SMA is a 2W wideband coaxial power amplifier operating in the 2 to 6 GHz frequency range. The amplifier offers 33 dBm min of P1db and high
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SBBA-060-44-02-SMA
SBBA-060-44-02-SMA
-high-gain-amplifier-sbba-060-44-02-sma-p
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Untitled
Abstract: No abstract text available
Text: SBBA-120-47-02-SMA DATA SHEET 6 GHz to 12 GHz, 47 dB Gain Broadband High Gain Amplifier with 2 Watt and SMA SBBA-120-47-02-SMA is a 2W wideband coaxial power amplifier operating in the 6 to 12 GHz frequency range. The amplifier offers 33 dBm min of P1db and high
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SBBA-120-47-02-SMA
SBBA-120-47-02-SMA
-high-gain-amplifier-sbba-120-47-02-sma-p
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Untitled
Abstract: No abstract text available
Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026 P1dB =33.6dBm at 5V RF IN 802.11g 54Mb/s Class AB Performance On-Chip Output Power Detector Input Prematched to ~5
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RFPA3026
RFPA3026
54Mb/s
26dBm
570mA
27dBm
513mA
DS120110
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RFPA2026
Abstract: PA2026 RFPA2026SR RFPA2026PCK-411 GRM1555C1H2R4BZ01E GJM1555C1H150JB01E RFPA2026SQ femtocell
Text: RFPA2026 RFPA2026 3-Stage Power Amplifier Module 2W, 700MHz to 2700MHz DET_IN 24 GND 25 GND RFOUT3/Vcc3 26 WCDMA Power at 2140MHz = 24dBm with -45dBc ACPR Flexible External Matching for Band Selection Gain = 38dB at 2140MHz P1dB = 33dBm at 2140MHz
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RFPA2026
700MHz
2700MHz
28-Pin,
2140MHz
24dBm
-45dBc
2140MHz
33dBm
RFPA2026
PA2026
RFPA2026SR
RFPA2026PCK-411
GRM1555C1H2R4BZ01E
GJM1555C1H150JB01E
RFPA2026SQ
femtocell
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Untitled
Abstract: No abstract text available
Text: 2 Watt, 6 GHz to 12 GHz, Medium Power Broadband Amplifier, 37 dB Gain, 42 dBm IP3, 6 dB NF, SMA TECHNICAL DATA SHEET PE15A4001 PE15A4001 is a 2W wideband coaxial power amplifier operating in the 6 to 12 GHz frequency range. The amplifier offers 33 dBm min of P1db and high 37 dB typical small signal gain with the excellent gain flatness of ±1.5dB max and an outstanding
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PE15A4001
PE15A4001
amplifier-37-db-gain-6-db-sma-pe15a4001-p
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Untitled
Abstract: No abstract text available
Text: 2 Watt, 2 GHz to 6 GHz, Medium Power Broadband Amplifier, 32 dB Gain, 42 dBm IP3, 5 dB NF, SMA TECHNICAL DATA SHEET PE15A4003 PE15A4003 is a 2W coaxial wideband power amplifier operating in the 2 to 6 GHz frequency range. The amplifier offers 33 dBm min of P1db and 30 dB min small signal gain with the excellent gain flatness of ±1.0dB max and the output IP3 performance
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PE15A4003
PE15A4003
amplifier-32-db-gain-5-db-sma-pe15a4003-p
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Untitled
Abstract: No abstract text available
Text: SPA-020-27-02-SMA DATA SHEET Medium Power Amplifier at 2 Watt P1dB Operating From 1 GHz to 2 GHz with 35 dB Gain, 45 dBm IP3 and SMA The SPA-020-27-02-SMA is a L-band coaxial 2W high dynamic range power amplifier, operating in the 1 to 2 GHz frequency range and designed for low noise
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SPA-020-27-02-SMA
SPA-020-27-02-SMA
o0-27-02-sma-p
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Untitled
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT6401FM
ITT6401FM
360mA
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GaAsTEK
Abstract: No abstract text available
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
loQ-360mA
GaAsTEK
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