Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER AMPLIFIER 4 GHZ Search Results

    POWER AMPLIFIER 4 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIER 4 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    soqpsk

    Abstract: ku-band 15 watt SSPA RF power amplifier MHz
    Text: Solid State Power Amplifier High Power, Broadband, Ku Band Solid State RF Amplifier Aethercomm Part Number SSPA 14.4-15.5-4 is a high • Operation from 14.4 to 15.5 GHz power, Ku Band solid state power amplifier that operates • 4 Watts Output Power Min


    Original
    PDF

    high power microwave transmitter

    Abstract: microwave sensor 145mm power amplifier 12 GHZ High Power Microwave Device 90-GHz
    Text: HBH 8.0 – 12.0 GHz High Power Amplifier Microwave GmbH HA6011/4 General Description The HA6011/4 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for


    Original
    HA6011/4 HA6011/4 145mm 105mm high power microwave transmitter microwave sensor power amplifier 12 GHZ High Power Microwave Device 90-GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Amplifier, Power, 1.6W 9.5-14.5 GHz MAAPGM0070-DIE Rev A Advance Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with


    Original
    MAAPGM0070-DIE MAAPGM0070-DIE PDF

    Untitled

    Abstract: No abstract text available
    Text: Amplifier, Power, 1.6W 9.5-14.5 GHz MAAPGM0070-DIE 903279 — Advanced Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with


    Original
    MAAPGM0070-DIE MAAPGM0070-DIE PDF

    Untitled

    Abstract: No abstract text available
    Text: Amplifier, Power, 1.3W 17.7-19.7 GHz MAAPGM0072-DIE Rev A Advance Datasheet Features ♦ 1.3 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0072-DIE is a 4-stage 1.3 W power amplifier with


    Original
    MAAPGM0072-DIE MAAPGM0072-DIE PDF

    Untitled

    Abstract: No abstract text available
    Text: Amplifier, Power, 1.6W 10.0-13.25 GHz MAAPGM0070-DIE Rev A Advance Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with


    Original
    MAAPGM0070-DIE MAAPGM0070-DIE PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC327MS8G / 327MS8GE v04.0607 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE Saturated Power: +30 dBm


    Original
    HMC327MS8G 327MS8GE HMC327MS8G HMC327MS8GE PDF

    AN3016

    Abstract: MAAP-000072-PKG003 MAAP-000072-SMB003
    Text: Amplifier, Power, 1 W 17.7-19.7 GHz MAAPGM0072-DIE Rev B Preliminary Datasheet Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0072-DIE is a 4-stage 1 W power amplifier with on-chip


    Original
    MAAPGM0072-DIE MAAPGM0072-DIE AN3016 MAAP-000072-PKG003 MAAP-000072-SMB003 PDF

    MAAP-000070-PKG003

    Abstract: AN3016 MAAP-000070-MCH000 MAAP-000070-SMB003
    Text: Amplifier, Power, 1.9W 10.0-13.25 GHz MAAPGM0070-DIE Rev B Preliminary Datasheet Features ♦ 1.9 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.9 W power amplifier with on-chip


    Original
    MAAPGM0070-DIE MAAPGM0070-DIE MAAP-000070-PKG003 AN3016 MAAP-000070-MCH000 MAAP-000070-SMB003 PDF

    MCR03EZHUJ000

    Abstract: S1872 s1872a S1898 s1901
    Text: PRELIMINARY DATA SHEET SKY65129-11: 1.98-2.02 GHz High Linearity 4 W Power Amplifier Applications Description • Satellite phones/SATCOM Skyworks SKY65129-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,


    Original
    SKY65129-11: SKY65129-11 01293A MCR03EZHUJ000 S1872 s1872a S1898 s1901 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Watt Psat, 2 GHz to 4 GHz, High Power Amplifier, 39 dB Gain, 48 dBm IP3, SMA TECHNICAL DATA SHEET PE15A5038 The PE15A5038 is a 8 W high gain Class A/AB coaxial power amplifier operating in the 2 to 4 GHz frequency range. The amplifier offers 8 Watts typical of saturated power and 39 dB minimun small signal gain with ±1.5 dB maximum of gain


    Original
    PE15A5038 PE15A5038 -amplifier-39-db-gain-ip3-sma-pe15a5038-p PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Watt Psat, 2 GHz to 4 GHz, High Power Amplifier, 39 dB Gain, 48 dBm IP3, SMA TECHNICAL DATA SHEET PE15A5038F The PE15A5038F is a 8 W high gain Class A/AB coaxial power amplifier operating in the 2 to 4 GHz frequency range. The amplifier offers 8 Watts typical of saturated power and 39 dB minimun small signal gain with ±1.5 dB maximum of gain


    Original
    PE15A5038F PE15A5038F amplifier-39-db-gain-ip3-sma-pe15a5038f-p PDF

    signal generator

    Abstract: AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series
    Text: Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS • • • • AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed


    Original
    AWT6252 AWT6274 AWT6275 AWT6276 signal generator AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series PDF

    MAAP-000072-PKG003

    Abstract: MAAP-000072-SMB003 MAAP-000072-SMB004 S2083
    Text: RoHS Compliant MAAP-000072-PKG003 Amplifier, Power, 1.3W 17.7-19.7 GHz Rev A Preliminary Datasheet Features ♦ 1.3 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process YYWW AP072G XXX MACOM Description The MAAP-000072-PKG003 is a 4-stage 1.3 W power amplifier


    Original
    MAAP-000072-PKG003 AP072G MAAP-000072-PKG003 MAAP-000072-SMB003 MAAP-000072-SMB003 MAAP-000072-SMB004 S2083 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET ECM060 4 X 4 mm WCDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM060 is a 10 pin 4 X 4 mm power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide


    Original
    ECM060 ECM060 27dBm 1920MHz 1950MHz 1980MHz PDF

    agilent HBT transistor series

    Abstract: Amplifier Modules AWT6271 E4419B E9301H Low frequency power transistor and modules fsp Power supply 6624A R04033 E4419
    Text: Application Note WCDMA Cellular 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6271 AWT6272 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed for WCDMA Cellular handsets have an operating


    Original
    AWT6271 AWT6272 agilent HBT transistor series Amplifier Modules AWT6271 E4419B E9301H Low frequency power transistor and modules fsp Power supply 6624A R04033 E4419 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET ECM070 4 X 4 mm WCDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM070 is a 10 pin 4 X 4 mm power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide


    Original
    ECM070 ECM070 1950MHz SS-000670-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: XP1027-BD Power Amplifier 27 - 31 GHz Rev. V2 Features 2 5 4 3 V D3 VG3 VD2 V G2 VD1 Functional Diagram Ka-Band 4 W Power Amplifier Balanced Design, Good Input / Output Match 25 dB Small Signal Gain 35 dBm Saturated Output Power 43 dBm Output Third Order Intercept OIP3


    Original
    XP1027-BD DM6030HK PDF

    Untitled

    Abstract: No abstract text available
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original
    P1072-BD 08-Mar-09 MIL-STD-883 XP1072-BD-EV1 XP1072-BD PDF

    DM6030HK

    Abstract: XP1072-BD
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original
    29-Jan-09 P1072-BD MIL-STD-883 viaBD-000V XP1072-BD-EV1 XP1072-BD DM6030HK PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 Watt Psat, 8 GHz to 11 GHz, High Power Amplifier, 28 dB Gain, SMA TECHNICAL DATA SHEET PE15A4015 PE15A4015 is a broadband 4 W GaAs PHEMT MMIC-based coaxial power amplifier module designed to be used in a wide range of commercial and defense applications in the 8 to 11 GHz frequency range. The amplifier offers 28 dB small signal


    Original
    PE15A4015 PE15A4015 ower-amplifier-28-db-gain-sma-pe15a4015-p PDF

    Untitled

    Abstract: No abstract text available
    Text: SPA-110-30-04-SMA DATA SHEET High Power Amplifier at 4 Watt P1dB Operating From 8.5 GHz to 11 GHz with 30 dB Gain, 45 dBm IP3 and SMA SPA-110-30-04-SMA is a 4 W X-band coaxial power amplifier designed for high linearity applications in the 8.5 to 11 GHz frequency range. The amplifier offers


    Original
    SPA-110-30-04-SMA SPA-110-30-04-SMA -amplifier-4watt-30db-spa-110-30-04-sma-p PDF

    2 Watt rf Amplifier

    Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
    Text: ^□0 4 12 5 D00 0G4 D ÖSb IHTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier


    OCR Scan
    D000G4D HMC139 HMC139 2 Watt rf Amplifier 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D PDF

    Untitled

    Abstract: No abstract text available
    Text: CMM-4 2.0 to 20.0 GHz GaAs MMIC Amplifier □ Flat Gain □ +16 dBm P.! dB □ Small Size: 39 x 74 mils □ Directly Cascadable □ Self-Biased □ Single Power Supply □ Guaranteed Performance Celeritek CMM-4 GaAs MMIC Amplifier The CMM-4 is a 2 to 20 GHz GaAs MMIC amplifier.


    OCR Scan
    16dBmP PDF