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    POWER 1A 25V MOSFET Search Results

    POWER 1A 25V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER 1A 25V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HIP1030

    Abstract: HIP1030AS
    Text: HIP1030 S E M I C O N D U C T O R 1A High Side Driver with Overload Protection December 1994 Features Description o o • Over Operating Temperature Range -40 C to +125 C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range


    Original     		PDF HIP1030 HIP1030 1-800-4-HARRIS HIP1030AS

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT789A 25V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -25V IC = -3A high Continuous Current Low saturation voltage VCE sat < -250mV @ -1A


    Original     		PDF FZT789A OT223 -250mV FZT689B AEC-Q101 OT223 J-STD-020 DS33168

    VN0109N5

    Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
    Text: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an


    Original     		PDF AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0109N5 VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109

    Untitled

    Abstract: No abstract text available
    Text: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)


    Original     		PDF WTN9575 OT-223 18-Jul-07 OT-223

    SOP8 Package

    Abstract: No abstract text available
    Text: WTK6679 Surface Mount P-Channel Enhancement Mode MOSFET 7 -14 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<10mΩ@VGS = -10V * RDS(ON)<13mΩ@VGS = -4.5V


    Original     		PDF WTK6679 WTK6679 300us, 03-May-07 SOP8 Package

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3974-01L

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3974-01L

    AP2318GEN

    Abstract: No abstract text available
    Text: AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Small outline package ▼ RoHS Compliant BVDSS 30V RDS ON 720mΩ ID 1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP2318GEN OT-23 OT-23 100ms AP2318GEN

    2N7336

    Abstract: IRFG6110
    Text: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)


    Original     		PDF 2N7336 IRFG6110 10--Gate 12--GatForward 2N7336 IRFG6110

    27BSC

    Abstract: marking 62m
    Text: WTK9410 6 5 D 4 D G 7 3 D S 8 S 2 D S P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)


    Original     		PDF WTK9410 300us, 12-Mar-07 27BSC 27BSC marking 62m

    Untitled

    Abstract: No abstract text available
    Text: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)


    Original     		PDF 2N7336 IRFG6110

    27BSC

    Abstract: marking 62m
    Text: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)


    Original     		PDF WTK9410 300us, 12-Mar-07 27BSC 27BSC marking 62m

    MOSFET 600V 1A

    Abstract: BALLAST CFL
    Text: MPK02N6 N-Channel POWER MOSFET Features 600V, 1A, Typical Rds on = 7Ω Extremely High dv/dt Capability 100% Avalanche Tested New High Voltage Benchmark Gate Charge Minimized Application Low Power Battery Chargers Swith Mode Low Power Supplies Low Power, Ballast, CFL(Compact


    Original     		PDF MPK02N6 00A/us MOSFET 600V 1A BALLAST CFL

    AN1332

    Abstract: smd transistor marking C14 C5 MARKING smd transistor smd transistor marking 1p T DIODE smd marking R12 smd transistor pinout sot23 MARKING SMD transistor R11 smd transistor marking 1p smd transistor marking sp1 capacitor SM 1206 100uf 6.3V
    Text: ISL8510EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8510 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8510 integrates


    Original     		PDF ISL8510EVAL1Z ISL8510 500mA AN1332 ISL8510EVAL1Z smd transistor marking C14 C5 MARKING smd transistor smd transistor marking 1p T DIODE smd marking R12 smd transistor pinout sot23 MARKING SMD transistor R11 smd transistor marking 1p smd transistor marking sp1 capacitor SM 1206 100uf 6.3V

    smd transistor marking r14

    Abstract: 0603 footprint IPC IHLP-2525CZ-ER-10R-M01 DIODE smd marking R12 smd diode marking 1P smd transistor marking 1p smd transistor marking D3 C3225X7R1E106MT CAPACITOR SMD smd transistor marking u1
    Text: ISL8501EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8501 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8501 integrates


    Original     		PDF ISL8501EVAL1Z ISL8501 500mA AN1326 smd transistor marking r14 0603 footprint IPC IHLP-2525CZ-ER-10R-M01 DIODE smd marking R12 smd diode marking 1P smd transistor marking 1p smd transistor marking D3 C3225X7R1E106MT CAPACITOR SMD smd transistor marking u1

    HIP1030AS

    Abstract: igbt driver
    Text: 39 HIP1030 PRELIMINARY Apni 1994 1A High Side Driver with Overload Protection Description Features • Over Operating Temperature Range -40°C to +125°C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range • Over-Voltage Shutdown Protected


    OCR Scan     		PDF HIP1030 HIP1030 HIP1030AS igbt driver

    Untitled

    Abstract: No abstract text available
    Text: S HIP 1030 ADVANCE INFORMATION 1A High Side Driver With Over-Load Protection May !992 Features Description • Over Operating Range: -40°C to +125°C - 1V Max at 1A Saturation Voltage - 1A Current Switching Capability - 4.5V to 25V Power Supply Range The HIP1030 is a Power Integrated Circuit designed as a


    OCR Scan     		PDF HIP1030

    P-channel Dual MOSFET VGS -25V

    Abstract: b 1624 transistor P-channel MOSFET VGS -25V
    Text: 0 OPTEK Product Bulletin HCT802 May 1993 Dual Enhancement Mode MOSFET Type HCT802 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V


    OCR Scan     		PDF HCT802 HCT802 P-channel Dual MOSFET VGS -25V b 1624 transistor P-channel MOSFET VGS -25V

    Untitled

    Abstract: No abstract text available
    Text: @.OBIEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package • V ds = 90V • lD o n N-Channel = 1.9A P-Channel = 0.5A • Two devices selected for V ds, switching time, and capacitance


    OCR Scan     		PDF HCT801 HCT801 250mA

    HCT801

    Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
    Text: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V


    OCR Scan     		PDF HCT801 HCT801 000E345 HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185

    SSD2002

    Abstract: DD214 942 rectifier diode
    Text: N & P-CHANNEL POWER MOSFET SSD2002 FEATURES 8SOIC • Extremely Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSD2002 SSD2002 b414E DD214 942 rectifier diode

    FS2KM18A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A + • VDSS . 900V • TDS ON (MAX) .7 .3 Q


    OCR Scan     		PDF FS2KM-18A FS2KM18A

    C320-16

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC C onverter, b attery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal com puter etc. MAXIMUM RATINGS Symbol Tc = 25°C Ratings Unit V dss Drain-source voltage


    OCR Scan     		PDF FS2AS-14A C320-16

    HCT801TX

    Abstract: Dual Enhancement Mode MOSFET
    Text: 0 OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source


    OCR Scan     		PDF HCT801 HCT801 VN0109 D00S34S HCT801TX Dual Enhancement Mode MOSFET