Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNP-SI DARLINGTON POWER AMP Search Results

    PNP-SI DARLINGTON POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    PNP-SI DARLINGTON POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6282

    Abstract: DS3636 motorola K 626 2N6283 2N6284 2N6286 2N6287 MJH6282 MJH6283 MJH6284
    Text: PNP NPN MJH6282 MJH6285 MJH6283 MJH6286 MJH6284 MJH6287 DARLINGTON COMPLEMENTARY SILKX3N POWER TRANSSTC RS . . . designed ing motor e Similar for general-purpose control PopularFJPN 2N6282, to the PNP 2N6285, @ Rugged 2N6286, RBSOA SI Monolithic amplifier


    Original     		PDF MJH6282 MJH6285 MJH6283 MJH6286 MJH6284 MJH6287 2N6282, 2N6285, 2N6286, 2N6283, 2N6282 DS3636 motorola K 626 2N6283 2N6284 2N6286 2N6287

    NTE135A

    Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
    Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.


    Original     		PDF NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159

    sanken high power audio amplifier

    Abstract: STD01N STD01P G746 SC102 YG6260 sanken audio
    Text: STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 100 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,


    Original     		PDF STD01N STD01P STD01P sanken high power audio amplifier G746 SC102 YG6260 sanken audio

    2n6039

    Abstract: 2N6036
    Text: SGS-THOMSON 2N6036 2N6039 Œfî D^Q K ô |[LI©fl©RflB(Si COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • 2N6036 IS A SGS-THOMSON PREFERRED SALESTYPE ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS


    OCR Scan     		PDF 2N6036 2N6039 2N6039 OT-32 2N6036/2N6039

    2SB1093

    Abstract: 04 ow
    Text: SEC l i T / '> 1J =1 > h Si l i con Tr ansi st or i i O 2SB1093 PNPx t a > '> * .? PNP Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching ftW m / P A C K A G E DIMENSIONS 2 S B 1 0 9 3 iin ij > h y Y ÿ y ì? x 9 -e,


    OCR Scan     		PDF 2SB1093 2SB1093ii R2-500 35SISS 2SB1093 04 ow

    SK9458

    Abstract: SK9446 SK9447 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9444 SK9450
    Text: THOMSON/ DISTRIBUTOR B IPO LAR TRANSISTORS 5ÛE D • TQ2tjfl73 0 0 0 4 0 3 7 TST com. Maximum Ratings TCE Type Device Polarity & M aterial Breakdown Voltages Application 'complementary device type SK9443 PNP/Si Preamp Input Circuits - NPN/Si Microwave Low-Noise Amp for CATV,


    OCR Scan     		PDF Wbfl73 aODqfl37 SK9443 SK9442 SK9444 SK9445 SK9446 SK9447 SK9447 T-023 SK9458 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9450

    SK3180

    Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
    Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3179B SK3178B SK3180 SK3181A SK3181A SK3180 SK3182 SK3183A SK3183A SK3182 SK3220 SK3219 SK3197 SK3188A SK3191 SK3201

    SK3893

    Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
    Text: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3861 SK3721 SK3862 SK3722 SK3865A SK3866A SK3867A SK3867A T-036 SK3896 SK3893 sk3896 SK3936 SK3935 SK93 sk3948 SK3897 sk3895

    NTE34

    Abstract: 2039P nte33 nte50 nte157
    Text: Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo BV c e o BVebO l>FE Pd *T 1 160 160 6 100 Min 0.9 15 Min 4 15 160


    OCR Scan     		PDF NTE31) NTE34) NTE33) NTE37) NTE36 NTE36) NTE36 NTE37 T0202 NTE34 2039P nte33 nte50 nte157

    SK3858

    Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
    Text: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band


    OCR Scan     		PDF T02bfl bv180 SK3715 SK3275 SK3716A SK3717 SK3718 SK3719 T-041 SK3840 SK3858 SK3854 SK3466 SK3747 SK3836 SK3839 SK3861 SK3859 SK3722

    BDT62B

    Abstract: SB 62A diode BDT62 BDT62 B BDT62A bdt63a BDT63 BDT63B BDT63C TRANSISTORE
    Text: J BDT62; -62A BDT62B; 62C ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; T0-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 BDT62B SB 62A diode BDT62 B BDT62A bdt63a BDT63 BDT63C TRANSISTORE

    BDX62

    Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10
    Text: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,


    OCR Scan     		PDF bbS3131 D01TIN7 BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63C fxs 100 10

    nte280

    Abstract: nte291
    Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280


    OCR Scan     		PDF 280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291

    SK3239

    Abstract: sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052
    Text: THOMSON/ DISTRIBUTOR 2bE D • T □ E h Ö 73 O G G H O S T I ■ Bipolar Transistors / y jy j MAXIMUM RATINGS TCE Type 2SD822 Breakdown Voltages Device Device Collector Material & Power Current Base Collector- Collector- Emitter- Polarity Dissipate. Continuous


    OCR Scan     		PDF 2SD822 2SD822BULK SK3003A SK3004 SK3006 22440m2 OF031A OF370F I47in DF346A SK3239 sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 • BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,


    OCR Scan     		PDF BDX66; BDX66B; BDX67, BDX67A, BDX67B BDX67C. BDX66 T-33-37

    NPN S2e

    Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
    Text: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum


    OCR Scan     		PDF T0220 T0202 T0202 NTE263) 281MCP NPN S2e Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp

    Untitled

    Abstract: No abstract text available
    Text: J _ TIP140 TIP141 TIP142 V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146


    OCR Scan     		PDF TIP140 TIP141 TIP142 OT-93 TIP145, TIP146 TIP147. TIP140

    BDT65

    Abstract: IOM10 BDT64 BDT64A BDT64B BDT64C BDT65B TRANSISTORE MSA-06
    Text: J BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. PNP complements are BDT64; BDT64A; BDT64B and BDT64C.


    OCR Scan     		PDF BDT65; BDT65B; O-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 T0-220. 7z82329 IOM10 BDT64 BDT64A BDT64C BDT65B TRANSISTORE MSA-06

    TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    Abstract: No abstract text available
    Text: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121


    OCR Scan     		PDF TIP125 TIP126 TIP127 TIP120, TIP121 TIP122. TIP125 bti53T31 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    TF 450

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218


    OCR Scan     		PDF T0218 NTE2305) T0220 TF 450

    BDT65

    Abstract: bdt65c bdt64
    Text: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		PDF BDT64 BDT64B; 711002b T0-220 BDT65, BDT65A, BDT65B BDT65C. 711D62b BDT65 bdt65c

    BOX53C

    Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B
    Text: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54


    OCR Scan     		PDF BDX53 BDX54 BDX53A, BDX54A BDX53B BDX54B BDX53C, BDX54C BOX53C BOX53 box54 BDX54 BDX53A BDX53C BDX54A BDX54B

    d45e3

    Abstract: d45e2 d45e
    Text: HARRIS SEMICOND SECTOR SbE ]> • 43G2271 Ü040Ô30 T'iS HHAS D45E Series File Number 2354 t 10-Ampere P-N-P Darlington Power Transistors -3 7 -2 -7 TERMINAL DESIGNATIONS Complementary to the D44E Series -40, -60, and -80 Volts, 50 Watts Gain of 1000 at -5 A


    OCR Scan     		PDF 43G2271 10-Ampere 92CS-39969 O-220AB D45E-series 43Q227] 0040a3s d45e3 d45e2 d45e

    2SB1272

    Abstract: No abstract text available
    Text: K =j > y 7. $ /Transistors 2SB1272 2SB1272 PNP > V □ > b 7 > 'J 7 s $ X Epitaxial Planar PNP Silicon Transistor Darlington 1£Jil>j£S^iS,liffl/Low Freq. Power Amp. • ÿH fi’+ iiE I/'D im e n s io n s (Unit : mm) • ft* V -U 1) >V h FE r 2) $ > ! * - $ • < * - KP*3*to


    OCR Scan     		PDF 2SB1272 2SB1272