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    PNP TRANSISTOR 500MA 30V Search Results

    PNP TRANSISTOR 500MA 30V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR 500MA 30V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    18P4G

    Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP


    Original     		PDF M54562P/FP 500mA M54562P M54562FP 500mA) 18P4G 20P2N-A pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF 500mA M54562WP 500mA) Jul-2011

    pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF M54562WP 500mA M54562WP 500mA) Jul-2011 pnp DARLINGTON TRANSISTOR ARRAY 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high


    Original     		PDF M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY

    M54562FP

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high


    Original     		PDF M54562FP 500mA M54562FP 500mA)

    MMBT4403 UTC

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: MMBT4403L


    Original     		PDF MMBT4403 MMBT4403 500mA. MMBT4403L MMBT4403-AE3-R MMBT4403L-AE3-R OT-23 QW-R206-034 MMBT4403 UTC

    MMBT4403

    Abstract: MMBT4403-AE3-R MMBT4403L
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: MMBT4403L


    Original     		PDF MMBT4403 MMBT4403 500mA. MMBT4403L MMBT4403-AE3-R OT-23 QW-R206-034 MMBT4403-AE3-R MMBT4403L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER  DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.


    Original     		PDF MMDT2907A MMDT2907A 500mA. MMDT2907AG-AL6-R OT-363 QW-R218-028

    transistor 2n4403

    Abstract: 2N4403 2N4403L-T92-B 2N4403-T92-B 2N4403-T92-K
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L


    Original     		PDF 2N4403 2N4403 500mA. 2N4403L 2N4403-T92-B 2N4403L-T92-B 2N4403-T92-K 2N4403L-T92-K QW-R201-053 transistor 2n4403 2N4403L-T92-B 2N4403-T92-B 2N4403-T92-K

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Midium Power Transistors ±30V / ±1A MP6Z11  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA)


    Original     		PDF MP6Z11 500mA -500mA -25mA) R1120A

    MMDT2907A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.


    Original     		PDF MMDT2907A MMDT2907A 500mA. MMDT2907AL-AL6-R MMDT2907AG-AL6-R MMDT2227AL-AL6-R OT-363 QW-R218-028

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L


    Original     		PDF 2N4403 2N4403 500mA. 2N4403L 2N4403-T92-B 2N4403-T92-K QW-R201-053

    transistor 2n4403 equivalent

    Abstract: transistor 2n4403 2N4403 2N4403L-T92-B 2N4403-T92-B 2N4403-T92-K
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L


    Original     		PDF 2N4403 2N4403 500mA. 2N4403L 2N4403-T92-B 2N4403L-T92-B 2N4403-T92-K 2N4403L-T92-K QW-R201-053 transistor 2n4403 equivalent transistor 2n4403 2N4403L-T92-B 2N4403-T92-B 2N4403-T92-K

    C2N4403

    Abstract: 2N4403L-T92-B 2N4403 2N4403-T92-B 2N4403-T92-K
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: 2N4403L


    Original     		PDF 2N4403 2N4403 500mA. 2N4403L 2N4403-T92-B 2N4403L-T92-B 2N4403-T92-K 2N4403L-T92-K QW-R201-053 C2N4403 2N4403L-T92-B 2N4403-T92-B 2N4403-T92-K

    T100

    Abstract: No abstract text available
    Text: Midium Power Transistors -30V / -1A 2SAR293P  Dimensions (Unit : mm) Structure PNP Silicon epitaxial planar transistor MPT3 (SC-63) <SOT-428> Features Low saturation voltage VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA) (1) Applications


    Original     		PDF 2SAR293P SC-63) OT-428> -500mA -25mA) R1010A T100

    MMBT4403 UTC

    Abstract: No abstract text available
    Text: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


    Original     		PDF MMBT4403 MMBT4403 500mA. OT-23 QW-R206-034 MMBT4403 UTC

    MMBT4403 2T

    Abstract: MMBT4403 MMBT4403-AE3-R marking 2t
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ 3 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323


    Original     		PDF MMBT4403 MMBT4403 500mA. OT-23 OT-323 MMBT4403-AE3-R MMBT4403-AL3-R MMBT4403L-AE3-R MMBT4403L-AL3-R MMBT4403G-AE3-R MMBT4403 2T MMBT4403-AE3-R marking 2t

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION  2 The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323


    Original     		PDF MMBT4403 MMBT4403 500mA. OT-23 OT-323 MMBT4403G-AE3-R MMBT4403G-AL3-R QW-R206-034

    MMBT4403

    Abstract: MMBT4403-AE3-R MMBT4403L
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ 3 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323


    Original     		PDF MMBT4403 MMBT4403 500mA. OT-23 OT-323 MMBT4403L MMBT4403G MMBT4403-AE3-R MMBT4403-AL3-R MMBT4403L-AE3-R MMBT4403-AE3-R MMBT4403L

    M54564

    Abstract: M54564P circuit fluorescent tube 24v 18P4G 20P2N-A M54564FP TIME BASE GENERATOR 10HZ PNP DARLINGTON ARRAYS pnp 8 transistor array npn 8 transistor array
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M54564P/FP 500mA M54564P M54564FP 500mA) M54564 circuit fluorescent tube 24v 18P4G 20P2N-A TIME BASE GENERATOR 10HZ PNP DARLINGTON ARRAYS pnp 8 transistor array npn 8 transistor array

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100～320. ・Low Saturation Voltage : VCE sat =-0.4V(Max.) (IC=-500mA, IB=-20mA).


    Original     		PDF -500mA, -20mA) KTC3265. KTA1298 -800mA -20mA -10mA -10mA,

    pnp 8 transistor array ttl

    Abstract: M54564FP 18P4G 20P2N-A M54564P pnp 8 transistor array npn 8 transistor array high voltage high current darlington array 18
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M54564P/FP 500mA M54564P M54564FP 500mA) pnp 8 transistor array ttl 18P4G 20P2N-A pnp 8 transistor array npn 8 transistor array high voltage high current darlington array 18

    2SA505

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA505 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min.) ·Collector-Emitter Saturation VoltageVCE(sat)= -0.8V (Max.)@ IC= -500mA APPLICATIONS ·Designed for medium power amplifier applications.


    Original     		PDF 2SA505 -500mA -500mA; -50mA -50mA; -800mA; -10mA; 2SA505

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS* Ta=25°C, unless otherwise specified


    Original     		PDF 2N4403 2N4403 500mA. -10mA QW-R201-053