Untitled
Abstract: No abstract text available
Text: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening
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SHD419205
SHD419305
SHD419205S
SHD419305S
S-100
150Vdc
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort PNP General Purpose Transistors MMBT3904WT1 NPN and PNP Silicon NPN MMBT3906WT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
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323/SC
MMBT3904WT1
MMBT3906WT1
MMBT3906WT1
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transistor marking wt
Abstract: motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN MPS6521* PNP MPS6523 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage
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MPS6521*
MPS6523
MPS6521
MPS6523
CAS218A
MSC1621T1
MSC2404
MSD1819A
transistor marking wt
motorola application note AN-569
modes of operation of transistor BC177
BC237
hie for bc547b
2N2222 MPS2222 npn transistor
BC547 collector characteristic curve
2n3819 equivalent transistor
MOTOROLA TRANSISTOR 2N3819
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2n5401 equivalent
Abstract: transistor equivalent of 2N5401 transistor equivalent for 2N5401
Text: SENSITRON SEMICONDUCTOR SHD431008 TECHNICAL DATA DATA SHEET 2040,REV. - SMALL SIGNAL TRANSISTOR - PNP Electrically Equivalent to 2N5401 DESCRIPTION: A SINGLE PNP SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).
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SHD431008
2N5401)
2n5401 equivalent
transistor equivalent of 2N5401
transistor equivalent for 2N5401
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Untitled
Abstract: No abstract text available
Text: SHD430001Q SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 917, REV. - QUAD PNP SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS 2N2907 IN A CERAMIC LCC-28T PACKAGE MAXIMUM RATINGS RATING (ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR)
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SHD430001Q
2N2907)
LCC-28T
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shd4341
Abstract: No abstract text available
Text: SHD434001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 399, REV. – Formerly part number SHD4341 PNP QUAD SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS IN A CERAMIC DIP PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR
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SHD4341
SHD434001
shd4341
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mje3055T data
Abstract: No abstract text available
Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
MJE3055T
mje3055T data
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Untitled
Abstract: No abstract text available
Text: SHD431002 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 646, REV. A PNP SWITCHING TRANSISTOR SHD431002S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to MMBT3640 • Surface Mount Package Absolute Maximum Ratings*
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SHD431002
SHD431002S
S-100
MMBT3640
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Untitled
Abstract: No abstract text available
Text: SHD431006 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 678, REV. - PNP SWITCHING TRANSISTOR SHD431006S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to 2N3906 • Surface Mount Package Absolute Maximum Ratings* Symbol
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SHD431006
SHD431006S
S-100
2N3906
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shd4304
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD430204 TECHNICAL DATA DATA SHEET 1079, REV. Formerly part number SHD4304 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol
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SHD4304
SHD430204
2N6193
shd4304
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol
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SHD4193
SHD419203
2N3741
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD419204 TECHNICAL DATA DATA SHEET 1078, REV A. Formerly part number SHD4194 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol
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SHD4194
SHD419204
2N6193
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shd4303
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD430203 TECHNICAL DATA DATA SHEET 937, REV. A Formerly part number SHD4303 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol
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SHD4303
SHD430203
2N3741
shd4303
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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K1 transistor
Abstract: pnp vhf transistor
Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,
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523SbQS
BF767
Q62702-F553
K1 transistor
pnp vhf transistor
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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BFP96
Abstract: BFQ32C
Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X
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BFP96.
BFQ32C
BFP96
BFQ32C
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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nf950
Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,
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023SbQS
Q62702-F553
nf950
transistor BF 37
transistor BF 236
TRANSISTOR 2SC 950
TRANSISTOR JC 539
2sc 1948 a
Q62702-F553
transistor code mark NF
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2SA1586
Abstract: A1586 2SC4116
Text: 2SA1586 TO SH IBA 2 S A 1 586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • • • High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity
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2SA1586
150mA
2SC4116
125transportation
2SA1586
A1586
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • U nit in mm High Voltage and High current 2.1 ± 0.1 : Vc e o = —50V, I C = —150mA(Max.) • Excellent hpE Linearity
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2SA1586
--50V,
--150mA
2SC4116
961001E
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • U nit in mm High Voltage and High current : V C E 0 = —50V, I C = - 1 5 0 m A (Max.) 2.1 ±0.1 1.2 5 ± 0.1
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2SA1586
2SC4116
961001EAA2'
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marking IAY
Abstract: 2SA1586 2SC4116 A1586 2SA158
Text: TOSHIBA 2SA1586 2 S A 1 586 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : V c e O = - 50V, IC =-150m A (M ax.) Excellent hpE Linearity
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2SA1586
-150m
2SC4116
961001EAA2'
marking IAY
2SA1586
A1586
2SA158
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2SA1586
Abstract: marking IAY 2SC4116 A1586 transistor marking bh ra
Text: TOSHIBA 2SA1586 2 S A 1 586 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity : hpE dC = -0.1mA) / hFE (Ic = -2m A) = 0.95 (Typ.)
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2SA1586
150mA
2SC4116
2SA1586
marking IAY
A1586
transistor marking bh ra
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