2N4261
Abstract: No abstract text available
Text: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors
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2N4261
com/2n4261
2N4261
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transitor SOT 363
Abstract: sot-26 transitor
Text: CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE SAT PNP POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090LE is an Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard
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CZT7090LE
CZT7090LE
OT-223
CZT3090LE
30-April
transitor SOT 363
sot-26 transitor
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marking 591 sot23
Abstract: No abstract text available
Text: Central CMPT591E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the
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CMPT591E
OT-23
CMPT491E
500mA
500mA,
100mA
500mA
marking 591 sot23
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CMPT591E
Abstract: No abstract text available
Text: CMPT591E SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high
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CMPT591E
OT-23
500mA,
100mA
500mA
100MHz
30-August
CMPT591E
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germanium transistor pnp
Abstract: nte213
Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:
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NTE213
NTE213
500mA
germanium transistor pnp
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nte181
Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Text: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per
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NTE180
NTE181
750mA
NTE181MP
NTE181
NTE180MCP
NEC 08F
NTE180
NTE181 power transistor
200w audio power amplifier
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2n4399
Abstract: 2N4398
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use In amplifier and switching applications. FEATURES: *DC Current Gain Specified-1.0 to 30 A
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2N4398
2N4399
2N5745
2N4398,
2N5301
2N5302
2N5303
2n4399
2N4398
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BDX 20a
Abstract: BDX68A BDX68B BDX68C BDX69 BDX69A BDX69B BDX69C 200w audio amplifier ic
Text: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.
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BDX68A
BDX68B
BDX68C
BDX69,
BDX69A,
BDX69B,
BDX69C.
300ms,
BDX 20a
BDX68A
BDX68B
BDX68C
BDX69
BDX69A
BDX69B
BDX69C
200w audio amplifier ic
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200w AUDIO AMPLIFIER
Abstract: transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a
Text: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.
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BDX68A
BDX68B
BDX68C
BDX69,
BDX69A,
BDX69B,
BDX69C.
25ime
300ms,
200w AUDIO AMPLIFIER
transistor BDX 65
200w audio power amplifier
pnp transistor 120v 10a
a/pnp transistor 120v 10a
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2n4399
Abstract: No abstract text available
Text: 2N4398 2N4399 2N5745 PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4398 series types are PNP silicon power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER
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2N4398
2N4399
2N5745
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NTE388
Abstract: NPN 250W NTE68 NTE68MCP
Text: NTE388 NPN & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
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NTE388
NTE68
NTE388
NPN 250W
NTE68
NTE68MCP
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Untitled
Abstract: No abstract text available
Text: BDX68A BDX68A BDX68B BDX68C S EM E LA B PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.
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BDX68A
BDX68B
BDX68C
BDX69,
BDX69A,
BDX69B,
BDX69C.
300ms,
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN0000 30A02MH PNP Epitaxial Planar Silicon Transistor 30A02MH Low-Frequency General-Purpose Amplifier Applications Preliminary Applications • Package Dimensions Low-frequency Amplifer, high-speed switching, small motor drive. unit : mm
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ENN0000
30A02MH
30A02MH]
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN0000 30A02SS PNP Epitaxial Planar Silicon Transistor 30A02SS Low-Frequency General-Purpose Amplifier Applications Preliminary Applications • Package Dimensions Low-frequency Amplifer, high-speed switching, small motor drive. unit : mm
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ENN0000
30A02SS
30A02SS]
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30A01S
Abstract: 75113
Text: Ordering number : ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2106A Features • • • [30A01S]
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ENN7511
30A01S
30A01S]
30A01S
75113
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Untitled
Abstract: No abstract text available
Text: 30A02CH Ordering number : EN7358A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 30A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive Features
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30A02CH
EN7358A
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7361
Abstract: 73611 30A02SP
Text: Ordering number : ENN7361A 30A02SP PNP Epitaxial Planar Silicon Transistor 30A02SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency Amplifer, high-speed switching, small motor drive. unit : mm 2033A [30A02SP]
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ENN7361A
30A02SP
30A02SP]
7361
73611
30A02SP
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30A01SP
Abstract: ENN7512
Text: Ordering number : ENN7512 30A01SP PNP Epitaxial Planar Silicon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2033A Features 0.4 0.5 15.0
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ENN7512
30A01SP
30A01SP]
30A01SP
ENN7512
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73581
Abstract: 30A02CH
Text: Ordering number : ENN7358 30A02CH PNP Epitaxial Planar Silicon Transistor 30A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency Amplifier, high-speed switching, small motor drive. unit : mm 2150A [30A02CH]
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ENN7358
30A02CH
30A02CH]
73581
30A02CH
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MJ4502
Abstract: MJ802 MJ4502 MJ802
Text: ÆàMOSPEC HIGH-POWER PNP SILICON TRANSISTOR PNP MJ4502 .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. FEA TU RES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area
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100-Watts
750mA
MJ802
MJ4502
MJ802 MJ4502
MJ802
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JE6043
Abstract: JE6045 MJE6043 MJE6044 JE6044 MJE6045 mje6041 2N6041 je6041 2N6040
Text: MO T OR OL A SC X S TR S/ R F 12E D | b3b7254 0G0MSfi4 b | 7 ^ B ^ / 2N6040 thru 2N6042 PNP 2N6043 Him 2N6045 NPN MJE6040 thru MJE6041 PNP MJE6043 thru MÌE6045 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
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b3b7254
2N6040
2N6042
2N6043
2N6045
MJE6040
MJE6041
MJE6043
E6045
2N6042,
JE6043
JE6045
MJE6044
JE6044
MJE6045
2N6041
je6041
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p705
Abstract: No abstract text available
Text: Central CMPT591E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ENHANCED <E > S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the
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CMPT591E
OT-23
500mA
100MHz
30-August2D01)
OT-23
p705
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T0204
Abstract: NS11015
Text: AŒ y ^ IP NS11015 NEW ENGLAND SEMICONDUCTOR PNP SILICON DARLINGTON POWER TRANSISTORS • • • • • • 30 AMPERE PNP DARLINGTON POWER TRANSISTOR GENERAL PURPOSE AM PLIFIER LOW FREQUENCY SW ITCHING HIGH DC CURRENT GAIN MONOLITHIC CONSTRUCTION BUILT IN BASE EM ITTER SHUNT RESISTORS
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NS11015
T0-204AA
NS11015
T0204
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Untitled
Abstract: No abstract text available
Text: Central CMPT591E Semiconductor Corp. E N H A N C E D S P E C IF IC A T IO N SURFACE MOUNT PNP SILICON TRANSISTOR EN H AN CED <E> - 'V S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP
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CMPT591E
OT-23
CMPT491E
500mA
CP705
30-August
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