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    PNP 10A Search Results

    PNP 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR  DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide


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    PDF STD888 STD888 STD888L-at QW-R209-028

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE  DESCRIPTION The UTC 2SB936 is a silicon PNP epitaxial planar type, it uses UTC’s advanced technology to provide the customers with high DC


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    PDF 2SB936 2SB936 2SB936L-TN3-T 2SB936G-TN3-T O-252 2SB936L-TN3-R 2SB936G-TN3-R QW-R209-029

    2n2955

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    PDF 2N2955 2N2955 2N2955L-T30-Y QW-R205-004

    2N2955

    Abstract: 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS „ DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    PDF 2N2955 2N2955 2N2955L-T30-Y QW-R205-004 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP

    2N2955

    Abstract: 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    PDF 2N2955 2N2955 2N2955L 2N2955-T30-K 2N2955L-T30-K QW-R205-004 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


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    PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD459Fax:

    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


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    PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    log sheet air conditioning

    Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
    Text: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


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    PDF ZXTD3M832 MLP832 log sheet air conditioning MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC

    MLP322

    Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
    Text: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state


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    PDF ZXT4M322 MLP322 MLP322 ZXT4M322 ZXTD4M322TA ZXTD4M322TC

    2N2955

    Abstract: No abstract text available
    Text: UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


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    PDF 2N2955 2N2955

    power transistor 2n2955

    Abstract: 2n2955 transistor 2N2955 2n2955 Power Transistor PNP "PNP Transistor" 2n2955 2N2955 equivalent 2n2955 pnp power transistor UTC SILICON PNP 3A TRANSISTORS
    Text: UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


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    PDF 2N2955 2N2955 QW-R205-004 power transistor 2n2955 transistor 2N2955 2n2955 Power Transistor PNP "PNP Transistor" 2n2955 2N2955 equivalent 2n2955 pnp power transistor UTC SILICON PNP 3A TRANSISTORS

    power transistor 2n2955

    Abstract: 2N2955 2n2955 Power Transistor PNP SWITCHING TRANSISTOR 60V 2n2955 pnp power transistor
    Text: UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


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    PDF 2N2955 2N2955 QW-R205-004 power transistor 2n2955 2n2955 Power Transistor PNP SWITCHING TRANSISTOR 60V 2n2955 pnp power transistor

    ZXTD720MC

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


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    PDF ZXTD720MC ZXTD3M832 MLP832 ZXTD720MC

    PT10m

    Abstract: A1210 BTA1210J3
    Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low


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    PDF C656J3 BTA1210J3 -120V BTA1210J3 O-252 UL94V-0 PT10m A1210

    Untitled

    Abstract: No abstract text available
    Text: Application Note Compensation for Linear Regulators by Kieran OÕMalley In the majority of low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


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    PDF CS-8156

    NTE390

    Abstract: NTE391
    Text: NTE390 NPN & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.


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    PDF NTE390 NTE391 500mA, NTE390 NTE391

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR  APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.  FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    PDF 2SA2016 2SA2016G-AB3-R 2SA2016L-TN3-R 2SA2016G-TN3-R OT-89 O-252 2SA2016G QW-R208-018

    PNP SOT89

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR „ APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. „ FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    PDF 2SA2016 2SA2016L-AB3-R 2SA2016G-AB3-R 2SA2016L-TN3-R 2SA2016G-TN3-R 2SA2016L-TN3-T 2SA2016G-TN3-T OT-89 O-252 PNP SOT89

    NTE284

    Abstract: NTE284MP NTE285 NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier
    Text: NTE284 NPN & NTE285 (PNP) Silicon Complementary Transistors Audio Amplifier Output Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications:


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    PDF NTE284 NTE285 NTE284MP NTE284 NTE285MP NTE285 NTE285MCP NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier

    2SA2016L-AB3-R

    Abstract: 2SA20 2SA2016 2SA2016-AB3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS 1 * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES SOT-89 *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    PDF 2SA2016 OT-89 2SA2016L 2SA2016-AB3-R 2SA2016L-AB3-R 2005t QW-R208-018 2SA2016L-AB3-R 2SA20 2SA2016 2SA2016-AB3-R

    2N6438

    Abstract: 2N6338 2N6340 2N6436 2N6437
    Text: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


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    PDF 2N6338 2N6340 2N6436 2N6437 2N6438 VCC-80V 2N6340

    Untitled

    Abstract: No abstract text available
    Text: > In the majority o f low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


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    PDF 120mA 350mA,

    Untitled

    Abstract: No abstract text available
    Text: Compensation for Linear Regulators In the majority o f low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


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    PDF 120mA 350mA,

    2SA999L

    Abstract: 2SA999 trnsistor
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999L is a silicon PNP epitaxial type trnsistor designed for low Unftrmm OUTLINE DRAWING ^ 5.6MAX


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    PDF 2SA999L 2SA999L -100mA, SC-43 270Hz 30kHz 2SA999 trnsistor