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    Murata Manufacturing Co Ltd LQH32PN100MN0L

    FIXED IND 10UH 700MA 456MOHM SMD
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    DigiKey LQH32PN100MN0L Reel 24,000 2,000
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    LQH32PN100MN0L Ammo Pack 5
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    Newark LQH32PN100MN0L Cut Tape 5,016 5
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    Bristol Electronics LQH32PN100MN0L 500
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    ComSIT USA LQH32PN100MN0L 100
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    Avnet Abacus LQH32PN100MN0L 4,000 19 Weeks 2,000
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    Avnet Asia LQH32PN100MN0L 8 Weeks 2,000
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    Chip Stock LQH32PN100MN0L 80,000
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    Chip1Stop LQH32PN100MN0L Cut Tape 19,716
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    Win Source Electronics LQH32PN100MN0L 20,000
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    Murata Manufacturing Co Ltd LQH3NPN100MMEL

    FIXED IND 10UH 800MA 228MOHM SMD
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    DigiKey LQH3NPN100MMEL Cut Tape 4,000 1
    • 1 $0.36
    • 10 $0.279
    • 100 $0.2166
    • 1000 $0.16805
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    LQH3NPN100MMEL Digi-Reel 4,000 1
    • 1 $0.36
    • 10 $0.279
    • 100 $0.2166
    • 1000 $0.16805
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    LQH3NPN100MMEL Reel 4,000 2,000
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    Avnet Americas LQH3NPN100MMEL Reel 39 Weeks 2,000
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    Newark LQH3NPN100MMEL Cut Tape 565 5
    • 1 $0.447
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    Bristol Electronics LQH3NPN100MMEL 1,986
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    ComSIT USA LQH3NPN100MMEL 12,000
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    Avnet Abacus LQH3NPN100MMEL 118,000 19 Weeks 2,000
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    Avnet Asia LQH3NPN100MMEL 4,000 8 Weeks 2,000
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    Chip Stock LQH3NPN100MMEL 80,000
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    Panduit Corp PN10-10FF-2K

    CONN SPADE TERM 10-12AWG #10 YEL
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    DigiKey PN10-10FF-2K Reel 2,000 2,000
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    Sullins Connector Solutions NRPN102MAMS-RC

    CONN HEADER SMD 20POS 2MM
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    DigiKey NRPN102MAMS-RC Tube 1,470 1
    • 1 $2.15
    • 10 $2.15
    • 100 $1.444
    • 1000 $1.0598
    • 10000 $0.9451
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    Murata Manufacturing Co Ltd LQH43PN101M26L

    FIXED IND 100UH 320MA 1.85OHM SM
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    DigiKey LQH43PN101M26L Digi-Reel 1,029 1
    • 1 $0.5
    • 10 $0.392
    • 100 $0.3041
    • 1000 $0.27496
    • 10000 $0.27496
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    LQH43PN101M26L Cut Tape 1,029 1
    • 1 $0.5
    • 10 $0.392
    • 100 $0.3041
    • 1000 $0.27496
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    LQH43PN101M26L Reel 1,000 500
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    Avnet Americas LQH43PN101M26L Reel 500
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    Newark LQH43PN101M26L Cut Tape 500 1
    • 1 $0.582
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    ComSIT USA LQH43PN101M26L 1,000
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    Avnet Abacus LQH43PN101M26L 19 Weeks 500
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    PN10 Datasheets (209)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PN100 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN100 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN100 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN100 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PN100 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    PN100 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    PN100 National Semiconductor NPN General Purpose Transistors Scan PDF
    PN100 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    PN100 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    PN100 National Semiconductor NPN General Purpose Amplifiers Scan PDF
    PN100 National Semiconductor NPN General Purpose Amplifiers and Switches Scan PDF
    PN100 National Semiconductor Low Noise Amplifiers Scan PDF
    PN1000 Vishay Standard Precision Resistor Networks Single In-Line Scan PDF
    PN100-01 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    PN100-08 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    PN1001 Vishay Standard Precision Resistor Networks Single In-Line Scan PDF
    PN100-11 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    PN1002 Vishay Standard Precision Resistor Networks Single In-Line Scan PDF
    PN1003 Vishay Standard Precision Resistor Networks Single In-Line Scan PDF
    ...

    PN10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp pn100 transistor

    Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF PN200 PN200A PN100, PN100A C-120 Rev270302D pnp pn100 transistor PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity: IL = 5 mA (min.)  Narrow directivity characteristics for effective use of light input


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    PDF 2002/95/EC) PNZ107 PN107)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll


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    PDF 2002/95/EC) PNZ108 PN108)

    t1 BC547

    Abstract: specifications of BC547B transistor BC547B bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR BC547A CBVK741B019
    Text: BC547 / BC547A / BC547B / BC547C BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.


    Original
    PDF BC547 BC547A BC547B BC547C BC547 BC547A BC547B PN100A t1 BC547 specifications of BC547B transistor bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR CBVK741B019

    PN100

    Abstract: No abstract text available
    Text: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • • This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 1 B SOT-23 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A


    Original
    PDF PN100/PN100A/MMBT100/MMBT100A 300mA. OT-23 PN100/PN100A PN100/PN100A/MMBT100/MMBT100A PN100

    BC547 as amplifiers

    Abstract: bc547b BC547A BC547C BC547 C 547c transistors 547C BC547C SEMICONDUCTOR 547A Use of BC547 transistor
    Text: BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*


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    PDF BC547 BC547A BC547B BC547C PN100A BC547 BC547A BC547B BC547 as amplifiers BC547C C 547c transistors 547C BC547C SEMICONDUCTOR 547A Use of BC547 transistor

    2N3704

    Abstract: equivalent transistor 2n3704 PN100
    Text: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol


    Original
    PDF 2N3704 PN100 2N3704 equivalent transistor 2n3704

    pn200

    Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF QSC/L-000019 PN200 PN200A PN100, PN100A C-120 Rev270302D pn200 PN100 PN100A PN200A pnp pn100 transistor transistor pn100

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin


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    PDF PNZ108CL PN108CL)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use


    Original
    PDF 2002/95/EC) PNZ108CL PN108CL)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109CL (PN109CL) Silicon planar type Unit: mm • High sensitivity: ICE(L) = 2 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)


    Original
    PDF 2002/95/EC) PNZ109CL PN109CL)

    2N5172

    Abstract: PN100
    Text: 2N5172 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original
    PDF 2N5172 PN100 2N5172

    MMBT100

    Abstract: PN100A MMBT100A PN100
    Text: PN100 PN100A MMBT100 MMBT100A C E C B TO-92 B SOT-23 E Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol


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    PDF PN100 PN100A MMBT100 MMBT100A OT-23 PN100 MMBT100 PN100A MMBT100A

    PN106

    Abstract: PNZ106 npn phototransistor
    Text: Phototransistors PNZ106 PN106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input


    Original
    PDF PNZ106 PN106) PN106 PNZ106 npn phototransistor

    2N5551 CJ

    Abstract: No abstract text available
    Text: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100


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    PDF oo404tiS 2N5551 CJ

    PANASONIC MA

    Abstract: 2856K PN107 PN108
    Text: Panasonic Phototransistors PN107, PN108 Silicon NPN Phototransistors For optical control system s • F eatures • High sensitivity : I C e l = 5 mA (min.) (at L = 100 lx) • N arrow directional sensitivity for effective use o f light input • Fast response : tr = 5 (_ls (typ.)


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    PDF PN107, PN108 PN108) 2856K PANASONIC MA 2856K PN107 PN108

    MMBT101

    Abstract: PN101
    Text: PN101/MIUIBT101 NAT L SEMICOND DISCRETE D tSG113G d O ^ a i D PN101 S 'T - 2 7 - 7 3 . - National ' Semiconductor WA Jlm ] HE M M BT101 TO-236 (SOT-23) TO-92 E0 U TU G /10100-5 C TUG /10100-1 NPN General Purpose Amplifier Electrical Characteristics t a


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    PDF tSG113G T-27-73 PN101 MMBT101 O-236 OT-23) TUG/10100-5 TUG/10100-1 10fiA 100/iA MMBT101

    100S

    Abstract: PN106 KS2500
    Text: Panasonic Phototransistors PN106 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 3.5 |^s typ. • N arro w directional sensitivity fo r effective use o f lig h t input • S ignal m ixing c ap ab ility using ba se pin


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    PDF PN106 100S PN106 KS2500

    PN101

    Abstract: No abstract text available
    Text: Panasonic Phototransistors PN101 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs L E D ’s • Low dark current : I C e o = 5 nA typ. • Fast response : tr, tf = 3 |xs (typ.)


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    PDF PN101 2856K PN101

    Untitled

    Abstract: No abstract text available
    Text: 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum RâtinÇjS Symbol T A = 25°C unless o th e rw ise noted


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    PDF 2N3416 2N3417 PN100A

    2n5172

    Abstract: 2N517
    Text: SEMICONDUCTOR ¡m 2N5172 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol


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    PDF 2N5172 PN100 2n5172 2N517

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Phototransistors PN107F, PN108F Silicon NPN Phototransistors For optical control systems • Features • F la t w indow d esig n w hich is suited to op tical system s • W ide directio n al sen sitiv ity for easy use • F a st re sp o n se : tr = 8 jlls typ.


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    PDF PN107F, PN108F

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity : I Ce l = 3-5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing am bient light noise • Peak sensitivity w avelength matched with infrared light emitting


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    PDF PN109L

    D5387

    Abstract: 12337 CP-851
    Text: T H IS COPY IS PROVIDED ON A RES TR IC TED B A S IS AND PANDUIT PART NUMBER STUD SIZE PN10-5SLF-2K PN10-6SLF-2K PN10-8SLF-2K PN10-10SLF-2K PN10-14SLF-2K IS NOT TO BE USED D 1MENS IONS . ±.040 A .86 #5 121.84 .86 #6 121.84) .92 #8 123.37) .92 #10 123.37)


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    PDF PN10-5SLF-2K PN10-6SLF-2K PN10-8SLF-2K PN10-10SLF-2K PN10-14SLF-2K CP-851, CP-860, CP-861 CA-800 CD-800-3 D5387 12337 CP-851