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Untitled Abstract: No abstract text available Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte JUN/11/2002 PM0547
29F002T Abstract: No abstract text available Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte JUN/14/2001 PM0547 29F002T
Untitled Abstract: No abstract text available Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte 30ms-- 80us-- 100us PM0547
29f002 Abstract: No abstract text available Text: MX29F002/002NT/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002NT/B 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte n02/002N MX29F002/002NT/B NOV/11/2002 PM0547 29f002
Untitled Abstract: No abstract text available Text: INDEX NEW ADVANCED INFORMATION MX29F002/ MX29F002N 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 70/90/120ns • Low power consumption – 30mA maximum active current – 1µA typical standby current • Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/ MX29F002N 70/90/120ns 16K-Byte 32K-Byte 64K-Byte
MX29F002BQC-70G Abstract: 29F002T Text: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte PM0547 MX29F002BQC-70G 29F002T
Untitled Abstract: No abstract text available Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte 30ms-- 80us-- 100us PM0547
29F002T Abstract: 29F002 Text: ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002N 55/70/90/120ns 16K-Byte 32K-Byte 64K-Byte 29F002T/B-45 PM0547 29F002T 29F002
MX29F002NPC-12 Abstract: 29F002T Text: INDEX ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • 262,144x 8 only Fast access time: 70/90/120ns Low power consumption - 30mA maximum active current - 1µA typical standby current Programming and erasing voltage 5V ± 10%	Original	PDF	MX29F002/002N 70/90/120ns 16K-Byte 32K-Byte 64K-Byte sect/1998 SEP/10/1998 NOV/10/1998 DEC/09/1998 PM0547 MX29F002NPC-12 29F002T
29f002t Abstract: No abstract text available Text: ADVANCED INFORMATION ly p a c MX29F002/002N 2M -B IT [256K x 8] C M O S F L A S H M E M O R Y FEATURES • 2 6 2 ,1 4 4 x 8 only • Fast ac cess tim e: 4 5 7 5 5 /7 0 /9 0 /1 2 0 n s *p le a s e refer • to A C /D C characteristic table Low pow er consum ption	OCR Scan	PDF	MX29F002/002N PM0547 29f002t