Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PLA POWER RELAY Search Results

    PLA POWER RELAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    PLA POWER RELAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1 2.3±0.1 (5.3) (4.35) (3.0) di p Pl lan nclu ea e se pla m d m des


    Original
    PDF 2002/95/EC) 2SK3277

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm 6.0±0.2 1.0±0.1 1.5±0.1 3.4±0.3 1.4±0.1 0.95±0.15 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit


    Original
    PDF 2002/95/EC) 2SK2339

    51nd12

    Abstract: PLA relay 51ND12-WR 51ND12-W thermal Flasher V.23 fbr51 PLA power relay FBR51ND12 FBR512
    Text: COMPACT POWER RELAY 1 POLE—20 A FOR AUTOMOTIVE FLASHER FB LAMP LOAD APPLICATIONS R FBR51,512 (–WR) -5SERIES 1, HA 5 1 DI 2 S SC BE (W ON EN R) TIN W RE ILL UE FB PLA BE D RC ED 51 ,5 B 12 SE Y RI (W ES F) • FEATURES ● ● Relay for flasher lamp load (automotive application) newly


    Original
    PDF POLE--20 FBR51 FBR51 51nd12 PLA relay 51ND12-WR 51ND12-W thermal Flasher V.23 PLA power relay FBR51ND12 FBR512

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply • Package


    Original
    PDF 2002/95/EC) 2SK3892 O-220D-A1

    relais reed celduc

    Abstract: PLA relay Celduc pla 10 P625 SG24 SG26 230v relais Celduc pla 100
    Text: S/DIV/SG2xxxxx/A/14/03/2000 page 1 /3 F/GB RELAIS STATIQUES MONOPHASES AVEC UNE COMMANDE PAR INTERRUPTEUR EXTERIEUR ISOLE SG2 10 ou/or 40 A 230 ou/or 400 VAC EXTERNAL SWITCH CONTROLED SINGLE PHASE SOLID STATE RELAYS Les relais SG2 sont des relais statiques de puissance pour réseau alternatif . Ces relais permettent la commutation de charges monophasés sans nécessité de tension de commande,simplement en utilisant un contact extérieur qui sera isolé du secteur et travaillera en


    Original
    PDF S/DIV/SG2xxxxx/A/14/03/2000 relais reed celduc PLA relay Celduc pla 10 P625 SG24 SG26 230v relais Celduc pla 100

    Untitled

    Abstract: No abstract text available
    Text: an en ue on tin isc ce /D Part No. Publication date: October 2008 AN6784 Package Code No. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro


    Original
    PDF SDP00004CEB AN6784 SIP007-P-0000I AN6784

    CoolRunner XPLA3 CPLD Family

    Abstract: LCT3 IC s WITH 4 NAND S Pal programming PT16 PLD 22V10 PLD Programming Information
    Text: White Paper: CoolRunner CPLD CoolRunner XPLA3 CPLD Architecture Overview R WP105 v1.0 January 6, 2000 Author: Reno Sanchez Summary This document describes the CoolRunner™ XPLA3 CPLD architecture. Introduction This document describes the CoolRunner XPLA3 (eXtended Programmable Logic Array—third


    Original
    PDF WP105 CoolRunner XPLA3 CPLD Family LCT3 IC s WITH 4 NAND S Pal programming PT16 PLD 22V10 PLD Programming Information

    PLA relay

    Abstract: AN6263N
    Text: ICs for Cassette, Cassette Deck AN6262N, AN6263N Pause Detection Circuits of Radio Cassette, Cassette Deck • Overview Unit : mm The AN6262N and the AN6263N are the pause detection integrated circuits which select the program on the cassette tape. In the ordinal method, tape speed is different depending on the PLAY and FF/REW, and also nonsignal time between the programs is different. Therefore,


    Original
    PDF AN6262N, AN6263N AN6262N AN6263N PLA relay

    82S100

    Abstract: application of programmable array logic 22V10 complete details signetics 82s100 pla macrocells
    Text: Xilinx has acquired the entire Philips CoolRunner Low Power CPLD Product Family. For more technical or sales information, please see: www.xilinx.com XPLA Architecture White Paper Mark Aaldering Philips Semiconductors Programmable Products Group Albuquerque, NM USA


    Original
    PDF

    pla relay

    Abstract: PHD 73 PLD-10 TS16 IDT82V2108 JT-G706
    Text: T1 / E1 / J1 OCTAL FRAMER FEATURES • • • • • • • • • • • • • • • • • • PRELIMINARY BRIEF DATA SHEET IDT82V2108 APPLICATIONS Eight framers in a single chip supporting T1, E1, J1 or unframed data receive and transmit. System interface compatible with Mitel ST bus, AT&T CHI bus and


    Original
    PDF IDT82V2108 IDT82V2108 pla relay PHD 73 PLD-10 TS16 JT-G706

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original
    PDF 2002/95/EC) 2SK3047 O-220D-A1 K3047

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3048 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed • High-speed switching • Low on-resistance


    Original
    PDF 2002/95/EC) 2SK3048 O-220D-A1 K3048

    82S100

    Abstract: signal path designer
    Text: White Paper: XPLA CPLD R XPLA1 Family Architecture Author: Mark Aaldering WP101 v1.1 April 7, 2000 Summary In designing with CPLDs, designers want it all—devices that offer high speed, high density, and the flexibility to make changes to their design at any stage of the design process—especially


    Original
    PDF WP101 82S100 signal path designer

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name 1: Gate


    Original
    PDF 2002/95/EC) 2SJ0582

    ZTX338

    Abstract: ZTX452 MPSA05 MPSA06 MPSA55 MPSA56 ZTX337 ZTX450 ZTX451 ZTX453
    Text: MEDIUM POWER T A B LE 7 - N PN /PN P SILICO N PLA N A R M EDIUM POW ER T R A N S IS T O R S The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities in excess of 500 mW at


    OCR Scan
    PDF ZTX453 ZTX537 BC337P BC327P ZTX338 ZTX538 BC338P BC328P MPSA56 MPSA06 ZTX452 MPSA05 MPSA06 MPSA55 ZTX337 ZTX450 ZTX451

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 Q O S 'ï a M 'i 7 • ^ ' 3 f Z T SGS-THOMSON ^ 7 # Ij*G »[LI O T( q K S S G S-THOMSON 3 - 0 ° ) 2N5655 2N5656-2N5657 3ÜE D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The 2N5655, 2N5656 and 2N 5657 are silicon epi­ taxial planar NPN transistors in Jedec TO -126 pla­


    OCR Scan
    PDF 2N5655 2N5656-2N5657 2N5655, 2N5656 10MHz 100KHz 2N5655-2N5656-2N5657

    Untitled

    Abstract: No abstract text available
    Text: 2SD1073 N P N = Sl i i : f f i r ^>U'— ^ t r i p l e d if f u s e d pla n er ty p e H IG H P O W E R D A R L IN G T O N GENERAL PURPOSE POWER AMPLIFIER Outline Drawings 4.5*02 .13 I Features • h p E ^ if t l' H ig h D .C . c u rre n t gain • L o w s a tu ra tio n vo lta g e


    OCR Scan
    PDF 2SD1073 O-220AB SC-46 l95t/R89

    c838 transistor

    Abstract: transistor c829 c835 transistor c829 c829 transistor c836 c829 data c832 C833 mcl600
    Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan
    PDF MCT210 MCT26 MCT66 c838 transistor transistor c829 c835 transistor c829 c829 transistor c836 c829 data c832 C833 mcl600

    transistor c331

    Abstract: c337 transistor transistor c337 transistor c343 c331 transistor mcs6200 MCT2E CIRCUIT DIAGRAM c331 transistor dip type MCS-6200 Transistor c340
    Text: 112 O p to iso lato rs~ A* * W A, PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan
    PDF MCT210 MCT26 MCT66 MCS6200 MCS6201 MCS6200 100S2 transistor c331 c337 transistor transistor c337 transistor c343 c331 transistor MCT2E CIRCUIT DIAGRAM c331 transistor dip type MCS-6200 Transistor c340

    Optoisolator mct6

    Abstract: MCL611 C858 mcs6200 MCT8 opto MCT8 opto switch mct6 opto isolator IC 4N25 triac GI 4N25 two transistor forward
    Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan
    PDF MCT210 MCT26 MCT66 Optoisolator mct6 MCL611 C858 mcs6200 MCT8 opto MCT8 opto switch mct6 opto isolator IC 4N25 triac GI 4N25 two transistor forward

    transistor C372

    Abstract: transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611
    Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan
    PDF MCT210 MCT26 MCT66 MCS2400 transistor C372 transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611

    c879 transistor

    Abstract: TRANSISTOR C875 C880 transistor transistor c877 c877 transistor c871 C875 transistor transistor C870 c879 MCL611
    Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan
    PDF MCT210 MCT26 MCT66 PA494 IN914 c879 transistor TRANSISTOR C875 C880 transistor transistor c877 c877 transistor c871 C875 transistor transistor C870 c879 MCL611

    transistor c111

    Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
    Text: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan
    PDF MCT210 MCT26 MCT66 transistor c111 C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600

    transistor c828

    Abstract: c828 npn transistor C828 transistor free C828 c828 npn NPN transistor c828 hfe c828 npn c828 C828 transistor c828 power rating
    Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan
    PDF MCT210 MCT26 MCT66 transistor c828 c828 npn transistor C828 transistor free C828 c828 npn NPN transistor c828 hfe c828 npn c828 C828 transistor c828 power rating