G9906-01
Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP
Text: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.
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G9906-01
G9906-01
SE-171
KIRD1075E02
KIRD1075E02
photodiode InGaAs NEP
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opto 2561
Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
opto 2561
2561 OPTO
MXA-256-1
MXA-256-2
photodiode 256 elements
PerkinElmer 1700
inGaAs photodiode 1550 array
InGaas PIN photodiode, 1550 NEP
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1300-35D32-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D32-I is InGaAs PIN-photodiode featuring excellent responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with
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PD1300-35D32-I
PD1300-35D32-I
15degrees.
35mmition:
1300nm
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InGaas PIN photodiode, 1550 NEP
Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
InGaas PIN photodiode, 1550 NEP
PerkinElmer 1700
MXA-256-1
MXA-256-2
2561 OPTO
photodiode array 1550 nm
inGaAs photodiode 1550 array
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G8370-01
Abstract: G8370 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E03
G8370-01
G8370-02
G8370-03
G8370-05
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E04
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photodiode InGaAs NEP
Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E03
photodiode InGaAs NEP
G8370-01
G8370-02
G8370-03
G8370-05
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G8370-01
Abstract: G8370 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E04
2006DN
G8370-01
G8370-02
G8370-03
G8370-05
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G8370-01
Abstract: G8370 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E01
G8370-01
G8370-02
G8370-03
G8370-05
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PD-1300
Abstract: ingaas LED
Text: epitex Opto-Device & Custom LED PD1300-35T00 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T00 is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm
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PD1300-35T00
PD1300-35T00
60degrees.
35mmx0
1300nm
PD-1300
ingaas LED
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD Lead Pb Free Product RoHS compliant PD1300-35D52-I InGaAs PIN-PD PD1300-35D52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted
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PD1300-35D52-I
PD1300-35D52
35mmx0
1300nm
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ingaas LED
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1300-35D00-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D00-I is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm
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PD1300-35D00-I
PD1300-35D00-I
60degrees.
35mmx0
1300nm
ingaas LED
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1450-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed
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PD1450-35T52
PD1450-35T52
35mmx0
1450nm
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E02
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD PRELIMINARY Lead Pb Free Product RoHS compliant PD1450-35D52-I InGaAs PIN-PD PD1450-35D52-I is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted
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PD1450-35D52-I
PD1450-35D52-I
35mmx0
1450nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1300-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed
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PD1300-35T52
PD1300-35T52
35mmx0
1300nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1300-35D52-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed
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PD1300-35D52-I
PD1300-35D52
35mmx0
1300nm
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PD1450-35T32
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1450-35T32 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T32 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed
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PD1450-35T32
PD1450-35T32
35mmx0
1300nm
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PIN photodiode 500 nm
Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
Text: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with
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GFD1300-550
temperature-10
GFD1300-550
FIBER54
PIN photodiode 500 nm
Photodiode
Honeywell DBM 01
ACTIVE LOAD PHOTODIODE
photodiode esd sensitivity
pin Photodiode 1300 nm
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.
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G8195
SE-171
KIRD1034E02
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1450-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed
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PD1450-35T52
PD1450-35T52
35mmx0
1450nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD1300-35T32 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T32 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed
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PD1300-35T32
PD1300-35T32
35mmx0
1300nm
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PD1300-35T00
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD Lead Pb Free Product RoHS compliant PD1300-35T00 InGaAs PIN-PD PD1300-35T00 is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm
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PD1300-35T00
PD1300-35T00
60degrees.
1300nm
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SE-171
Abstract: G8195 G8195-11 G8195-12 pin photodiode 10 ghz Hamamatsu se171
Text: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.
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G8195
SE-171
KIRD1034E02
G8195-11
G8195-12
pin photodiode 10 ghz
Hamamatsu
se171
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