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    PHOTOTRANSISTOR DIE WAFER Search Results

    PHOTOTRANSISTOR DIE WAFER Result Highlights (5)

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    RJP1CS07DWA-00#W0 Renesas Electronics Corporation IGBT 1250V 150A Wafer Visit Renesas Electronics Corporation
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    RJP1CS05DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 75A Wafer Visit Renesas Electronics Corporation
    RJP65S03DWA-80#W0 Renesas Electronics Corporation IGBT 650V 30A Wafer Visit Renesas Electronics Corporation
    RJP1CS01DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 15A Wafer Visit Renesas Electronics Corporation

    PHOTOTRANSISTOR DIE WAFER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OPTOLAB

    Abstract: No abstract text available
    Text: OL 8110 Dual Emitter Phototransistor Mechanical Specifications • • • • Chip size: 508µm x 690 µm +/- 20 µm Chip thickness: 178 µm - 254 µ Active area: 200 µm x 400 µ Back side (collector) gol metalized for conductive epoxy die-attach Electrical Specifications (TA = 25°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 18-Jul-08

    T1070P

    Abstract: FVOV6870 MIL-HDBK-263 81119
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 18-Jul-08 FVOV6870 MIL-HDBK-263 81119

    T1070P

    Abstract: phototransistor visible light FVOV6870 MIL-HDBK-263 touch dimmer IC VISHAY Optoelectronics
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 18-Jul-08 phototransistor visible light FVOV6870 MIL-HDBK-263 touch dimmer IC VISHAY Optoelectronics

    Untitled

    Abstract: No abstract text available
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    FVOV6870

    Abstract: MIL-HDBK-263 silicon npn phototransistor phototransistor die
    Text: T5090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation


    Original     		PDF T5090P 2002/95/EC 2002/96/EC T5090P 18-Jul-08 FVOV6870 MIL-HDBK-263 silicon npn phototransistor phototransistor die

    Untitled

    Abstract: No abstract text available
    Text: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: wafer • Package form: wafer • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF T5096P 2002/95/EC 2002/96/EC T5096P 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25


    Original     		PDF T1070P T1070P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25


    Original     		PDF T1070P T1070P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25


    Original     		PDF T1070P T1070P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation


    Original     		PDF T1090P 2002/95/EC 2002/96/EC T1090P 18-Jul-08

    FVOV6870

    Abstract: MIL-HDBK-263
    Text: T5090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation


    Original     		PDF T5090P 2002/95/EC 2002/96/EC T5090P 18-Jul-08 FVOV6870 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation


    Original     		PDF T1090P 2002/95/EC 2002/96/EC T1090P 18-Jul-08

    T1090P

    Abstract: FVOV6870 MIL-HDBK-263
    Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation


    Original     		PDF T1090P 2002/95/EC 2002/96/EC T1090P 11-Mar-11 FVOV6870 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation


    Original     		PDF T1090P T1090P 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text:  !" incremental encoder chip 1.2 mm EEEEEEEEEEEEEEEECFCA93298C OIT3C consists in three unique silicon phototransistors. They have a common collector and every emitter is available on a pad. The pitch of the silicon arrays is 1.2 mm, while the component electrical pitch is 1.27 mm.


    Original     		PDF 300-900nm. 030mm 12234556667832897A8B5C

    manufacturing

    Abstract: antiparallel scr Optocoupler with triac transistor working principle AG SMD TRANSISTOR OPTOCOUPLER for SCR SCR firing circuit SMD Dual optocoupler hi speed smd
    Text: Manufacturing and Reliability Vishay Semiconductors Manufacturing and Reliability THE IMPORTANCE RELIABILITY OF OPTOCOUPLER Because of the widespread use of optocouplers as an interface device, optocoupler reliability has been of major importance to circuit designers and component engineers.


    Original     		PDF 11-Feb-11 manufacturing antiparallel scr Optocoupler with triac transistor working principle AG SMD TRANSISTOR OPTOCOUPLER for SCR SCR firing circuit SMD Dual optocoupler hi speed smd

    antiparallel scr

    Abstract: optocoupler MTBF phototransistor MTBF dual channel triac optocoupler inverse-parallel scr drive circuit optocoupler RC snubber vishay transistor transistor working principle opto-coupler scr SCR optocoupler
    Text: VISHAY Vishay Semiconductors Manufacturing and Reliability The Importance of Optocoupler Reliability Because of the widespread use of optocouplers as an interface device, optocoupler reliability has been of major importance to circuit designers and components engineers. Published studies of comparative


    Original     		PDF 18-Sep-03 antiparallel scr optocoupler MTBF phototransistor MTBF dual channel triac optocoupler inverse-parallel scr drive circuit optocoupler RC snubber vishay transistor transistor working principle opto-coupler scr SCR optocoupler

    Untitled

    Abstract: No abstract text available
    Text: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size


    Original     		PDF T5096P T5096P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1090P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF T1090P T1090P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation


    Original     		PDF T5096P T5096P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Infineon moisture sensitive package

    Abstract: phototransistor MTBF optocoupler MTBF dual channel opto triac antiparallel scr double channel optocoupler infineon mtbf optocoupler triac infineon transistor working principle mtbf infineon
    Text: Infineon technologies Optocoupler Manufacturing and Reliability The Concern for Optocoupler Reliability Because of the widespread use of optocouplers as an inter­ face device, optocoupler reliability has been a major con­ cern to circuit designers and components engineers. Pub­


    OCR Scan     		PDF 1-888-lnfineon Infineon moisture sensitive package phototransistor MTBF optocoupler MTBF dual channel opto triac antiparallel scr double channel optocoupler infineon mtbf optocoupler triac infineon transistor working principle mtbf infineon