photodiode InGaAs NEP
Abstract: No abstract text available
Text: Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 Multiplexed InGaAs PIN Photodiode Array MXA-256-X 800 - 1700 nm nm. The array has 256 elements IN A
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MXA-256-X
MXA-256-X
photodiode InGaAs NEP
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UDT Sensors PSD
Abstract: fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case
Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output
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1100nm.
UDT Sensors PSD
fast photodiode amplifier
UDT photodiode -5 silicon
UDT 500
UDT-555D
UDT Sensors
555D
UDT PIN
UDT-020UV
Photodiode amplifier ceramic case
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UDT-455
Abstract: UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors
Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output
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1100nm.
UDT-455
UDT photodiode -5 silicon
photodiode high responsivity high shunt resistance
silicon pin photodiode laser detection
UDT Sensors PSD
model UDT-455
UDT Sensors
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Untitled
Abstract: No abstract text available
Text: 2014-01-10 Silicon Photodiode for the Visible Spectral Range Silizium Photodiode für den sichtbaren Spektralbereich Version 1.1 BPW 21 Features: Besondere Merkmale: • Especially suitable for applications from 350 nm to 820 nm • Adapted to human eye sensitivity Vλ
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D-93055
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UDT Pin-6dp
Abstract: UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV
Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of
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1100nm.
drif-013D,
UV-013
15OSD-5-0,
OSD15-0,
OSD15-5T
BPX-65R
BPX-65
UV-001,
UDT Pin-6dp
UDT UV-005
UDT Pin-6dpI
OSD5.8-7Q
OSD15-5T
OSD5-5T
BPX65 amplifier
UDT photodiode -5T
PIN-020A
UDT-455UV
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Q62702P0885
Abstract: BPW21
Text: 2007-04-03 Silicon Photodiode for the Visible Spectral Range Silizium Photodiode für den sichtbaren Spektralbereich Version 1.0 BPW 21 Features: Besondere Merkmale: • Especially suitable for applications from 350 nm to 820 nm • Adapted to human eye sensitivity Vλ
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D-93055
Q62702P0885
BPW21
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UDT Sensors PSD
Abstract: UDT-555D OSI-515 UDT-020UV cf 455 e 555D UDT-555UV UDT-020D UDT-055UV UDT-455
Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of
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1100nm.
UDT-455
UDT-455LN
UDT-455UV
UDT-455UV/LN
OSI-515
OSI-515
UDT Sensors PSD
UDT-555D
UDT-020UV
cf 455 e
555D
UDT-555UV
UDT-020D
UDT-055UV
UDT-455
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IAG 080
Abstract: photodiode ingaas ghz
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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Abstract: No abstract text available
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as
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S2684-254
S2684-254
SE-171
KSPD1014E03
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as
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S2684-254
S2684-254
SE-171
KSPD1014E03
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S2684-254
Abstract: u 741 SE-171
Text: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as
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S2684-254
S2684-254
SE-171
KSPD1014E02
u 741
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Untitled
Abstract: No abstract text available
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as
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S2684-254
S2684-254
SE-171
KSPD1014E02
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TO-39, UVC
Abstract: uvc photodiode photodiode 011
Text: Photodiode EPD-270-0-0.3-2 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-C clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVC range 230 nm - 285 nm , mounted in hermetically sealed TO-39 package with clear
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EPD-270-0-0
D-12555
TO-39, UVC
uvc photodiode
photodiode 011
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InGaas PIN photodiode, 1550 NEP
Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
InGaas PIN photodiode, 1550 NEP
PerkinElmer 1700
MXA-256-1
MXA-256-2
2561 OPTO
photodiode array 1550 nm
inGaAs photodiode 1550 array
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UVA photodiode
Abstract: 4W-08 EPD360
Text: Photodiode EPD-360-0-0.3-1 10.05.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-A clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVA range 330 nm - 400 nm , mounted in hermetically sealed TO-39 package with clear
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EPD-360-0-0
D-12555
UVA photodiode
4W-08
EPD360
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GSO 69
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)
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S3590-18/-19
S3590-19:
SE-171
KPIN1039E01
GSO 69
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Untitled
Abstract: No abstract text available
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR
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BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
18-Jul-08
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EPD-310-0-0
Abstract: UV 310 nm
Text: Photodiode EPD-310-0-0.3-1 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-B clear UV-glass + filters SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVB range 290 nm - 330 nm , mounted in hermetically sealed TO-39 package with clear
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EPD-310-0-0
D-12555
UV 310 nm
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BPV10NF
Abstract: tshf5
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR
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BPV10NF
BPV10NF
08-Apr-05
tshf5
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opto 2561
Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
opto 2561
2561 OPTO
MXA-256-1
MXA-256-2
photodiode 256 elements
PerkinElmer 1700
inGaAs photodiode 1550 array
InGaas PIN photodiode, 1550 NEP
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S3590-08
Abstract: S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm
Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)
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S3590-18/-19
S3590-19:
SE-171
KPIN1039E01
S3590-08
S3590
S3590-09
S3590-18
S3590-19
ceramic scintillator
PIN photodiode 420 nm
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Untitled
Abstract: No abstract text available
Text: TERNARY PIN PHOTODIODE T018PACKAGE FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode • Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm • Suitable for Bit Rates up to 1.2 Gbit/* • Low Junction Capacitance • Fast Switching Times
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OCR Scan
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T018PACKAGE
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