EE-125
Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
EE-125
photo transistor high current
photo transistor
PHOTO TRANSISTOR current to voltage
photo-transistor
PK640
"photo transistor"
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PHOTO TRANSISTOR
Abstract: 640nm "photo transistor" photo ic KDT5001A
Text: NEW PRODUCT Silicon photo transistor KDT5001A Description The KDT5001A is high sensitivity silicon photo transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features - Higly sensitive photo transistor.
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KDT5001A
KDT5001A
640nm
PHOTO TRANSISTOR
640nm
"photo transistor"
photo ic
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT5001A Dimensions The KDT5001A is high sensitivity silicon photo [Unit : mm] transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
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color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Text: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
color sensitive PHOTO TRANSISTOR
Rise time of photo transistor
npn photo transistor
3mm photo transistor
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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pp601 40
Abstract: DIODE PP602 PS5022 PS3022 PS3072 PS3322 PS4032 PS5042 PS5042-2 PP701
Text: THROUGH-HOLE SHAPE - PHOTO TRANSISTOR n Photo Transistor Shape Part No. Ta= 25°C Features Wavelength of Peak Sensitivy l P TYP. v Photo Current IC MIN. TYP. V CE Spatial Distribution The typical distribution example of each shape is shown below Response
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PS3022
PS3322
PS3072
FH1011
DN311
KR311
DNP511
PS5132
28MIN.
16MIN.
pp601 40
DIODE PP602
PS5022
PS3022
PS3072
PS3322
PS4032
PS5042
PS5042-2
PP701
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OST-9N15
Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
Text: OST-9N15 PHOTO TRANSISTOR • General Description The OST-9N15 is high sensitivity NPN silicon photo-transistor mounted in a SMD plastic package. ■ Features ˙Compact ˙Wide angular response ˙Low cost ˙Meet RoHS ■ Applications ˙Optical counters ˙Optical detectors
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OST-9N15
OST-9N15
100uA
72hrs.
24hrs)
45min
30min)
color sensitive PHOTO TRANSISTOR
OST9N15
transistor d 1303
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PHOTO SENSORS
Abstract: fiber optical photo detector LED Reflective Optical Sensor Infrared photosensor OPTICAL INTERRUPTER position infrared detector object detection
Text: S. Classification of Photo Sensors The Toshiba Photo Sensor is classified as follows: Infrared LED [Emitters Visible LED Photo Transistor Photo sensors• Photo Diode IDetectors Photo 1C : Photo Interrupter ; Compound ; sensors : Photo Reflective Sensor 3. Photosensor Applications
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transistor 1052
Abstract: WPDT-317D photo darlington sensor Rise time of photo transistor p317d
Text: Photo Transistor Waitrony Module No.: WPDT-317D 1. General Description: The WPDT-317D is ; output NPN photo dai transistor mounted in an end black epoxy package. This photo darlington transistor narrow angular response. Dimensions 2. Features > > ^ > Compact 03mm
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WPDT-317D
WPDT-317D
Temper317D
transistor 1052
photo darlington sensor
Rise time of photo transistor
p317d
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waitrony
Abstract: WPDT-270 photo darlington sensor
Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-270
WPDT-270
PDT-270
waitrony
photo darlington sensor
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Untitled
Abstract: No abstract text available
Text: PHOTO TRANSISTOR -^q,u 1ÔE D • STTÌbSS QQOOMQS MTD6060 SILICON NPN EPITAXIAL PLANAR -1“ I 1 MARKTECH INTERNATIONAL SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR w ^ > - cj »T 77R M N APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READERS • POSITION SENSOR
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MTD6060
MTE1040,
QDDD403
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Untitled
Abstract: No abstract text available
Text: PHOTO TRANSISTOR IflE D MARKTECH INTERNATIONAL 57^55 G D D O M G 1! M MTD6180 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • INTERRUPTER • TAPE, CARD READERS FEATURES SYMBOL • Spectrally and mechanically matched with
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MTD6180
MTE1070A.
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transistor cms
Abstract: mtd6040 MTE1010A PHOTO TRANSISTOR
Text: PHOTO TRANSISTOR MARKTECH INTERNATIONAL IflE D STTTbSS G O G O m s MTD6040 u 3 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READ ERS • VELOCITY SENSO R FEATURES • High sensitivity: l|_=250/iA Typ. .
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MTD6040
250/iA
MTE1010A.
S0UHCE-MTE1010Â
transistor cms
mtd6040
MTE1010A
PHOTO TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: PHOTO TRANSISTOR MARKTECH INTERNATIONAL IflE D STTTbSS DDQOms 3 MTD6040 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD R E A D E R S • VELOCITY SE N SO R FEATURES • High sensitivity: l|_=250/<A Typ. .
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MTD6040
MTE1010A.
MTE101QA
cHfci55
Ta-25
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toshiba 4b1
Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
Text: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)
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TPS617
TLN107A,
TLN107A
driven40mm
TPS617
toshiba 4b1
4b1 toshiba
photo interrupter darlington sensor
TLN107
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS603A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS603A PHOTO TRANSISTOR FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER 0 3.0-t 0.3 VARIOUS KINDS OF READERS POSITION DETECTION 2 ÛO CONTROLLER OF HOME ELECTRIC EQUIPMENT “H ci-H
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TPS603A
TLN103A
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MTD6180
Abstract: MTE1070A
Text: I flE D 5 7 ^ 5 5 GGD04Q4 4 PHOTO TRANSISTOR MARK TECH INTERNATIONAL MTD6180 SILICON NPN EPITAXIAL PLANAR - I— t 1 I SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR u S fc d J K' L M APPLICATIONS • OPTICAL SWITCH F —H • INTER R U PTER 1. EMITTER 2. COLLECTOR
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MTD6180
MTE1070A.
MTD6180
MTE1070A
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TPS607A
Abstract: photo interrupter darlington sensor
Text: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • High sensitivity ; lL = 2mA TYP, • The same external shape as the infrared LED TLN107A, and is
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TPS607A
TLN107A,
TLN107A
--40mm
TPS607A
500//A
photo interrupter darlington sensor
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photo interrupter darlington sensor
Abstract: No abstract text available
Text: T O SH IB A TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 7 PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • Visible light cut type black package • High sensitivity : I l = 1.4mA (TYP.)
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TPS617
TPS61
TLN107A,
TLN107A
--40mm
TPS617
photo interrupter darlington sensor
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photo interrupter darlington sensor
Abstract: toshiba 4b1 TPS607A tps607 04b1 "Photo Interrupter" 4b1 toshiba TLN107A AUTOMATIC CONTROL UNIT
Text: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER Unit in mm PHOTOELECTRIC COUNTER 4 POSITION DETECTION AUTOMATIC CONTROL UNIT +0 ö 4 .4 -0 .2 +0 3-0 .2 2.4 ± 0 . 3
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TPS607A
TLN107A,
TLN107A
driven40mm
TPS607A
photo interrupter darlington sensor
toshiba 4b1
tps607
04b1
"Photo Interrupter"
4b1 toshiba
AUTOMATIC CONTROL UNIT
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TPS607A
Abstract: No abstract text available
Text: TO SHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P <; ■ MF fi n 7 » »a » PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER U nit in mm 4 PHOTOELECTRIC COUNTER POSITION DETECTION -4r AUTOMATIC CONTROL UNIT +0 4.4 -0.2
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TPS607A
TLN107A,
TLN107A
TPS607A
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photo transistor til 78
Abstract: SOC 291 MTD6060 MTE1040 QDQG403 0118 transistor
Text: MARKTECH INTERNATIONAL 1ÔE D • STTÌbSS QQOOMQS PHOTO TRANSISTOR -^ q,u MTD6060 0 — SILICON NPN EPITAXIAL PLANAR > - c L * T rM . SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR 1 t -J- Ii i f= M N APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READERS • PO SITIO N SEN S O R
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MTD6060
MTE1040,
Ta-25
MTE1040
photo transistor til 78
SOC 291
MTD6060
MTE1040
QDQG403
0118 transistor
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TLN101A
Abstract: TPS601A-B TPS601A tps604 toshiba TLN108 TPS604 photo 2870
Text: TPS601A TO SHIBA TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS601A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER POSITION DETECTION VARIOUS KINDS OF READERS • TO-18 metal package • High sensitivity. • Sharp directivity. Incident light can be effectively used.
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TPS601A
TPS604
TLN201
TPS601A
226//A
TLN101A
TPS601A-B
tps604 toshiba
TLN108
photo 2870
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