SOD87 marking code 7
Abstract: PRLL5819 marking code PH 817 PRLL5818 smd diod w 02 test SOD87 SOD87 code marking 2 M3D121 smd diod mm PRLL817
Text: Datum 971211 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande
|
Original
|
PDF
|
PRLL5818
M3D121
PRLL5817;
PRLL5818;
PRLL5819
SOD87 marking code 7
PRLL5819
marking code PH 817
smd diod w 02
test SOD87
SOD87 code marking 2
M3D121
smd diod mm
PRLL817
|
C2 ph zener diode
Abstract: C 12 PH zener diode ph c5 diode C 15 PH Zener diode C 13 PH Zener diode philips diode PH 13 IP4220CZ6_4 14555 C 11 PH Zener diode
Text: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 02 — 8 June 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates
|
Original
|
PDF
|
IP4220CZ6
IP4220CZ6
C2 ph zener diode
C 12 PH zener diode
ph c5 diode
C 15 PH Zener diode
C 13 PH Zener diode
philips diode PH 13
IP4220CZ6_4
14555
C 11 PH Zener diode
|
C 12 PH Zener diode
Abstract: C 15 PH Zener diode C 12 PH zener L2 SC74 C 13 PH Zener diode
Text: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 03 — 12 July 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates
|
Original
|
PDF
|
IP4220CZ6
IP4220CZ6
C 12 PH Zener diode
C 15 PH Zener diode
C 12 PH zener
L2 SC74
C 13 PH Zener diode
|
IP4220CZ6
Abstract: C 13 PH Zener diode ph-200 diode C 12 PH Zener diode IP4220 IP4220CZ6_4 zener diode capacitance ph 12 c zener diode C 11 PH Zener diode
Text: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 04 — 12 September 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates
|
Original
|
PDF
|
IP4220CZ6
IP4220CZ6
C 13 PH Zener diode
ph-200 diode
C 12 PH Zener diode
IP4220
IP4220CZ6_4
zener diode capacitance
ph 12 c zener diode
C 11 PH Zener diode
|
AV73
Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Text: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s
|
OCR Scan
|
PDF
|
BAV73
117027/00/01/pp8
AV73
Js SMD MARKING CODE SOT23
sot23 package marking AV
smd DIODE code marking kA
SMD IC marking 632
lm 9805
|
BAS678
Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
Text: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It
|
OCR Scan
|
PDF
|
b53T31
002432b
BAS678
10mAtoVâ
bb53T31
QDE4331
BAS678
BAW62
BAW62
BAW62 SOT23
MBB111
apx 188
|
BUK637-500B
Abstract: No abstract text available
Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode
|
OCR Scan
|
PDF
|
BUK637-500B
BUK637-500B
|
BAT85
Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
Text: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against
|
OCR Scan
|
PDF
|
DO-34)
BAT85
711002b
BAT85 sot
PHILIPS DIODE
philips Schottky diode
MARKING 12p
|
BUK655-500B
Abstract: No abstract text available
Text: N AMER PH ILIPS/DISCRETE LTE D • ^53*131 0030680 BBT « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery
|
OCR Scan
|
PDF
|
BUK655-500B
PINNING-T0220AB
bbS3T31
003Dflai4
BUK655-500B
|
SUS CIRCUIT breakover device
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a
|
OCR Scan
|
PDF
|
41D74
BR216
BR216
T0-220AB
T-ll-23
SUS CIRCUIT breakover device
|
ECG711
Abstract: ecg block diagram tv receiver schematic diagram PHILIPS tv schematic diagram PHILIPS ECG circuit diagram television internal parts block diagram ECG 5 V zener diode ECG 8 V zener diode Philips ECG "voltage divider" 2SC830
Text: bbsaiafl 00032Ö3 4 ECG711 W IDE-BAND AM PLIFIER/PH ASE DETECTOR WITH ZEN ER DIODE VOLTAGE REGULATOR PHILIPS E C G INC T '"7* 7- 0- 7- O S For AFC A utom atic Frequency Control] Applications 17E D PHASE DETECTOR TRANSFORMER D ESC R IPTIO N The E C G 711 represents a second genera
|
OCR Scan
|
PDF
|
ECG711
ECG711
ecg block diagram
tv receiver schematic diagram PHILIPS
tv schematic diagram PHILIPS
ECG circuit diagram
television internal parts block diagram
ECG 5 V zener diode
ECG 8 V zener diode
Philips ECG "voltage divider"
2SC830
|
DIODE T25 4 EO
Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Text: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable
|
OCR Scan
|
PDF
|
-SOT199
BUK627-500B
71IDA2b
T-39-11
711GflEb
0044S10
DIODE T25 4 EO
DIODE T25 4 bo
DIODE T25 4 ko
diode,FET
BUK627-500B
DIODE T25-4-bo
|
Untitled
Abstract: No abstract text available
Text: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon
|
OCR Scan
|
PDF
|
bbS3T31
DD2bfl32
PLVA400A
PLVA400A
aPLVA456A
PLVA459A
PLVA462A
PLVA465A
PLVA468A
PLVA459A
|
zq35a
Abstract: No abstract text available
Text: Philips Semiconductors Application Note Transmission lines and terminations with Philips Logic families Author: Mike Magdaluyo, Logic Products Group INTRODUCTION Table 1. Maximum trace length in inches with 15pF loading With increasing systems speeds and faster logic families,
|
OCR Scan
|
PDF
|
|
|
|
PH 21 DIODE
Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Text: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o
|
OCR Scan
|
PDF
|
PLVA400A
DO-35
PLVA459A
PLVA456A
PLVA450A
PLVA453A
250MA
MLA423
PH 21 DIODE
DD40
PLVA453A
PLVA462A
PLVA465A
PLVA468A
|
LHi 878
Abstract: LHi 878 application A429 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A
Text: bbSBTBl Philips Semiconductors GGEL&3 E 122 M APX Product specification Low voltage avalanche diode N AMER PLVA400A P H IL IP S /D IS C R E T E FEATURES DESCRIPTION • Very low dynamic im pedance at low currents: approxim ately Vfeo of conventional series
|
OCR Scan
|
PDF
|
bbS3T31
PLVA400A
PLVA400A
DO-35
PLVA465A
PLVA468A
PLVA459A
PLVA456A
PLVA450A
PLVA453A
LHi 878
LHi 878 application
A429
PLVA453A
PLVA462A
PLVA465A
|
n 943 y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES
|
OCR Scan
|
PDF
|
PMBD6100
PMBD6100
115002/00/03/pp12
n 943 y
|
smd p5c
Abstract: smd AYA
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD7000 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD7000 FEATURES
|
OCR Scan
|
PDF
|
PMBD7000
PMBD7000
115002/00/03/pp12
smd p5c
smd AYA
|
double diode SMD A7p
Abstract: smd code A7p A7P smd a7p smd diode smd A7p diode A7p bav 17 diode A7P DIODE
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV99 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99 FEATURES DESCRIPTION
|
OCR Scan
|
PDF
|
BAV99
BAV99
115002/00/03/pp12
double diode SMD A7p
smd code A7p
A7P smd
a7p smd diode
smd A7p
diode A7p
bav 17 diode
A7P DIODE
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV74 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification BAV74 High-speed double diode FEATURES DESCRIPTION
|
OCR Scan
|
PDF
|
BAV74
BAV74
115002/00/03/pp12
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT PMBD6050 High-speed diode Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed diode PMBD6050 FEATURES DESCRIPTION • Sm all plastic SM D package
|
OCR Scan
|
PDF
|
PMBD6050
PMBD6050
115002/00/03/pp12
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56W High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56W FEATURES DESCRIPTION
|
OCR Scan
|
PDF
|
BAW56W
BAW56W
115002/00/04/pp12
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 16 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky b a rrie r diode encapsulated in a S O D 323 ve ry sm all plastic
|
OCR Scan
|
PDF
|
1PS76SB40
115002/00/02/pp8
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION
|
OCR Scan
|
PDF
|
BAW56
BAW56
115002/00/03/pp12
|
