ID100
Abstract: MSAFX50N20A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX50N20A Features • • • • • • • 200 Volts 50 Amps 45 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX50N20A
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MSAFX50N20A
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ID100
Abstract: MSAFX50N20A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX50N20A Features • • • • • • • 200 Volts 50 Amps 45 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX50N20A
ID100
MSAFX50N20A
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PCIH47F300A1
Abstract: positronic datasheet PCIH47F300A1 Fuse RH A4 2A 250V PCI174-1022 PCIH47M400A1 Rittal positronic connector 3686135 200w dc applications 175W psu
Text: JASPER ELECTRONICS 1580 No. Kellogg Dr. Anaheim, Ca., 92807 Ph: 714 917-0749 Fax: (714) 917-0786 Email: [email protected] Web: www.jasperelectronics.com CompactPCI 175 and 200 Watt Power Supplies ® (PICMG COMPLIANT*) Features: 9 Standard PCI Output Voltages: 5.0V, 3.3V, ±12.0V, with
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0-264V
6-72V
8-32V
PCIH47F300A1
positronic datasheet PCIH47F300A1
Fuse RH A4 2A 250V
PCI174-1022
PCIH47M400A1
Rittal
positronic connector
3686135
200w dc applications
175W psu
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER30N20A MSAFR30N20A Features • • • • • • • 200 Volts 30 Amps 85 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAER30N20A
MSAFR30N20A
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ID100
Abstract: MSAEZ33N20A MSAFZ33N20A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A Features • • • • • • • 200 Volts 33 Amps 70 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAEZ33N20A
MSAFZ33N20A
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MSAEZ33N20A
MSAFZ33N20A
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ID100
Abstract: MSAER30N20A MSAFR30N20A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER30N20A MSAFR30N20A Features • • • • • • • 200 Volts 30 Amps 85 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAER30N20A
MSAFR30N20A
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ID100
MSAER30N20A
MSAFR30N20A
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A Features • • • • • • • 200 Volts 33 Amps 70 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAEZ33N20A
MSAFZ33N20A
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ID100
Abstract: MSAEI30N20A MSAFI30N20A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEI30N20A MSAFI30N20A Features • • • • • • • 200 Volts 30 Amps 85 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAEI30N20A
MSAFI30N20A
ID100
MSAEI30N20A
MSAFI30N20A
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12 volt dc to 220 volt ac inverter schematic
Abstract: SCR Gate Drive for ac to dc converter IGBT based voltage source converter three phase SCR gate drive circuit 12 volt dc to 220 volt ac inverter 150A SCR simple 3 phase INVERTER schematic 220 volt ac to 12 volt dc inverter SCR Inverter datasheet dc to ac inverter by scr
Text: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP150T120-02 TM POW-R-PAK 150A / 1200V 3 ph IGBT + converter assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a
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PP150T120-02
PP150T120-02
12 volt dc to 220 volt ac inverter schematic
SCR Gate Drive for ac to dc converter
IGBT based voltage source converter
three phase SCR gate drive circuit
12 volt dc to 220 volt ac inverter
150A SCR
simple 3 phase INVERTER schematic
220 volt ac to 12 volt dc inverter
SCR Inverter datasheet
dc to ac inverter by scr
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TUNABLE FILTER uhf
Abstract: types of RF transceiver FM tuning capacitor 225-400MHz TRANSMIT CUSTOM DIODE TUNABLE rf FILTER A778
Text: 5530 UNION CENTRE DRIVE WEST CHESTER, OHIO 45069 USA PH: 513-870-9060 FAX: 513-870-9064 TRAK-POLETM Tracking Transmit Filter Frequency Coverage ……………………….…. 30 to 400 MHz 30-90 MHz 90-200 MHz 200-400MHz 30-88 MHz 225-400MHz RF Input Power …………………………………… 0 to +10 dBm
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200-400MHz
225-400MHz
30dBm
200KHz
130VDC
32VDC
30-Oct-00
TUNABLE FILTER uhf
types of RF transceiver
FM tuning capacitor
225-400MHz
TRANSMIT CUSTOM DIODE
TUNABLE rf FILTER
A778
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brx49
Abstract: Thyristors BRX49 BRX44/PH
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors THYRISTORS type number V rrm max. V LEADED TYPES 2N881/PH 2N2329 BRX44/PH BRX45/PH BRX46/PH BRX47/PH BRX48/PH BRX49/PH 200
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2N881/PH
2N2329
BRX44/PH
BRX45/PH
BRX46/PH
BRX47/PH
BRX48/PH
BRX49/PH
brx49
Thyristors BRX49
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VM716N8
Abstract: No abstract text available
Text: ^ ^ V T C In c. Value the CustomerTU FEATURES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 .2 -5 pH 0.5 pH typical - Write Current Range 5 - 35 mA - Low Input Capacitance = 12 pF typical
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VM7160
65nV/VHz
VM7162
VM7164
VM7168
100mV,
10MHz
VM716N8
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Untitled
Abstract: No abstract text available
Text: VTC Inc. Value the Customer FEATURES • • • • • • • • • • • High Performance - Read Gain = 200 - 300 V /V Typical - Input Noise = 0.65nV/VHz Maxim um - Head Inductance Range = 0 . 2 - 5 pH 0.5 pH typical - W rite Current Range 5 - 35 mA
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65nV/VHz
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VM VTC
Abstract: No abstract text available
Text: V T C INC b4E D V TC Inc. Value the Customer FEATURES • TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • • High Performance - Read G ain = 200 - 300 V /V Typical - Input N oise = 0.65nV/VFiz Maxim um - Head Inductance R ange = 0 . 2 - 5 pH 0.5 pH typical
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65nV/VFiz
100mV,
VM VTC
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Untitled
Abstract: No abstract text available
Text: mamor ME701202 ME701602 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Tht&G-PhäSG Diode Bridge Modules 20 Amperes/1200-1600 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three phase bridge applica
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ME701202
ME701602
Amperes/1200-1600
ME701202,
677att
72T4bBl
000AS4fl
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Untitled
Abstract: No abstract text available
Text: Micnosemi H m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Pow ered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts Ultrafast rectifier in parallel with the body diode (M SAE type only)
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MSAEZ33N20A
MSAFZ33N20A
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CHN 950
Abstract: chn 714
Text: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER30N20A MSAFR30N20A Features 200 Volts 30 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only)
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MSAER30N20A
MSAFR30N20A
CHN 950
chn 714
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Untitled
Abstract: No abstract text available
Text: H B • S a n ta A na , C A ■ 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX50N20A Features 200 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX50N20A
20Vdc,
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Untitled
Abstract: No abstract text available
Text: MAY s ; VM3200 VTC Inc. 3.3-VOLT, TWO-TERMINAL, THIN-FILM MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY CONNECTION DIAGRAMS FEATURES • High Performance - Read Gain = 300, 200 oM 50 V/V - Input Noise = 0.55nV/VHz Typical - Head Inductance Range = 0 . 2 - 5 pH
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VM3200
55nV/VHz
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AN-202
Abstract: CPC1590 isolated mosfet gate driver
Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 Clare Introduces 200 Volt Optically Isolated, Self Biased Gate Driver CPC1590 is specifically for remote switching of DC and low frequency loads where isolated power is unavailable
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CPC1590
CPC1590,
AN-202
isolated mosfet gate driver
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Untitled
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts 33 Amps Ultrafast rectifier in parallel with the body diode (M SAE type only)
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MSAEZ33N20A
MSAFZ33N20A
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Untitled
Abstract: No abstract text available
Text: Micmsemi H m m Santa Ana, CA m Pro gre ss Pow ered by Technology 2830 S. Fairview S t Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEI30N20A MSAFI30N20A Features • • • • • • • 200 Volts 30 Amps 85 mQ Ultrafast rectifier in parallel with the body diode (MSAE type only)
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MSAEI30N20A
MSAFI30N20A
0DD43Ã
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D475
Abstract: No abstract text available
Text: DSS 2X101-015A Advanced Technical Information Power Schottky Rectifier * RSM RRM V V 150 150 Symbol -N - Type l* R Test Conditions 150 100 200 A A A 1200 A l^ = tbd A; L = 180 pH; TVJ = 25°C; non repetitive tbd mJ VA=1.5 • VRHMtyp.; f=10 kHz; repetitive
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2X101-015A
2x100
OT-227
2x101-015
Weig30
D4-75
D475
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Untitled
Abstract: No abstract text available
Text: PLASTIC SIDELOOKER PAIR yPTOELECI QPE1113 W IO W » • : 08 DIA. .08 DIA. .050 1.27 .050 (1.27) .062 DIA. .062 DIA. T .200 (5.08) EM ITTER C O LLE CTO R h .020 (0.51) SQ NOM 100^(2.54) .020 (0.51) .020 (0.51) - . 1 7 5 (4 .44) - —.175 (4.44)— PH O TO TRANSISTOR
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QPE1113
ST2171
QPE1113
940nm
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