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    PG1060 Search Results

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    PG1060 Price and Stock

    Central Semiconductor Corp CCSPG1060N-TR-PBFREE

    100V, 60A, N-CHANNEL CHIP SCALE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCSPG1060N-TR-PBFREE Cut Tape 1,442 1
    • 1 $5.43
    • 10 $3.807
    • 100 $5.43
    • 1000 $2.5375
    • 10000 $2.5375
    		Buy Now
    CCSPG1060N-TR-PBFREE Digi-Reel 1,442 1
    • 1 $5.43
    • 10 $3.807
    • 100 $5.43
    • 1000 $2.5375
    • 10000 $2.5375
    		Buy Now
    CCSPG1060N-TR-PBFREE Reel 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.5375
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    Central Semiconductor Corp CCSPG1060N TR PBFREE

    GaN FETs 100V, 60A, N-Channel Chip Scale GaNFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CCSPG1060N TR PBFREE 1,397
    • 1 $5.43
    • 10 $4.57
    • 100 $3.7
    • 1000 $2.81
    • 10000 $2.58
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    PG1060 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PG1060 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1060 Pirgo Electronics Silicon Planar Power Transistors Scan PDF

    PG1060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking v80 ghz

    Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A transistor marking v80 ghz HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna

    nec v80

    Abstract: NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B NE3509M04-T2B-A nec v80 NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A

    NE3509M04

    Abstract: NE3509M04-A nec v80 HS350 NE3509M04-T2 NE3509M04-T2-A
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A M04mm PG10608JJ02V0DS IR260 NE3509M04 NE3509M04-A nec v80 HS350 NE3509M04-T2 NE3509M04-T2-A

    nec v80

    Abstract: transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A nec v80 transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna

    marking v80

    Abstract: transistor marking v80 ghz ne3509m04 NE3509M04-A m04 marking NE3509 HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3509M04 NE3509M04 NE3509M04-T2 NE3509M04-A NE3509M04-T2-A NE3509M04-T2B-A PG10608EJ02V0DS marking v80 transistor marking v80 ghz m04 marking NE3509 HS350

    NEC C 3568

    Abstract: SW SPDT 6pin HS350
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2151TK L, S-BAND SPDT SWITCH DESCRIPTION The μPG2151TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


    Original     		PDF PG2151TK PG2151TK NEC C 3568 SW SPDT 6pin HS350

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NE3509M04. S2P

    Abstract: NE3509M04 NE3509M04-T2 HS350 NE3509M04-A NE3509M04-T2-A transistor marking v80 ghz
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    PG2020

    Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
    Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053

    2N4863

    Abstract: PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066
    Text: •M k / 2 ÔA oi:4.4 P I ELE CT RO NICS INC Ho * ¡M T E R IM D E | D 0 M 3 S T 2 0DDD144 S | ». nELEXTRonics r ninc. B U L L E T IN S u b j e c t to R e v i s i o n ' :.T V * POWER TRANSISTOR ENGINEERING BULLETIN^ y e 3 3 p IW i t h o u t N o tic e -, o s "


    OCR Scan     		PDF PG1050 PG1066, PG1051 PG1052 2N4863 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066

    pg2004

    Abstract: PG2011 pg2001 PG2006
    Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2004 PG2011 pg2001 PG2006

    2N4863

    Abstract: PG1060 PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057
    Text: 3* * / 20A- • 01:4.4 : - D P I ELECTRONICS INC 1 _ 20 1 IV I * DE | □DM3S‘i2- 0D0D14M S „ . T E R I M 1 . : POWER TRANSISTOR ENGINEERING BULLETIN PIRGO ? _ -S u b je c t ~7Z3 3 . - . . . B U L L E T I N ^ to R e v i s i o n


    OCR Scan     		PDF 000014M PG1050 PG1066, PG1051 PG1052 2N4863 PG1053 PG1054 PG1055 PG1060 PG1056 PG1057