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    PF 480 D25 Search Results

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    PF 480 D25 Price and Stock

    Crydom Inc SPF480D25

    SSR RELAY SPST-NO 25A 48-660V
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    DigiKey SPF480D25 Bulk 95 1
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    Crydom Inc PF480D25R

    SSR RELAY SPST-NO 25A 48-660V
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    DigiKey PF480D25R Bulk 13 1
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    WEE PF480D25

    SSR Relay, PCB Mount SIP
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    Crydom Inc PF480D25

    SSR RELAY SPST-NO 25A 48-660V
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    Verical PF480D25 251 2
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    Quest Components PF480D25 1
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    TME PF480D25 2 1
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    Interstate Connecting Components PF480D25 3
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    Master Electronics PF480D25 251
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    Crydom Inc CPF480D25

    SSR RELAY SPST-NO 25A 48-660V
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    PF 480 D25 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PF480D25 Crydom Relay SSR 15MA 15V DC-IN 25A 660V AC-OUT 4SIP Original PDF
    PF480D25 Crydom Solid State Relays, Relays, RELAY SSR DC 25A 480VAC PCB Original PDF
    PF480D25 Crydom Over 600 obsolete distributor catalogs now available on the Datasheet Archive - RELAY, AC SERIES, INTGRL HEAT, DC CONTRL, 48-660Vrms, 4-15VDC Scan PDF
    PF480D25R Crydom Relay SSR 15MA 15V DC-IN 25A 660V AC-OUT 4SIP Original PDF
    PF480D25R Crydom Solid State Relays, Relays, RELAY SSR DC 25A 480VAC PCB Original PDF

    PF 480 D25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40N30L

    Abstract: ixfm40n30
    Text: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A


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    PDF 35N30 40N30 40N30 O-204 40N30L ixfm40n30

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH 32N48 IXFT 32N48 N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 250 ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 480 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 480 V VGS VGSM Continuous Transient


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    PDF 32N48 O-268

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Symbol VDSS ID25 Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 480


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    PDF 80N48 OT-227 E153432

    80n48

    Abstract: 80N4
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN)


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    PDF 80N48 OT-227 E153432 80n48 80N4

    MB91486

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


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    PDF

    110N20

    Abstract: pf 480 d25
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)


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    PDF 200ns 200ns O-264 110N20 120N20 Cto150 110N20 pf 480 d25

    110N20

    Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
    Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol


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    PDF 120N20 200ns 110N20 IXFK110N20 Mosfet P 110A, diode lt 429

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    Abstract: No abstract text available
    Text: □ IXYS H H ifl JL æ* X HiPerFET IXFN120N20 Power MOSFETs OD N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr V DSS v DGR ^ ^ v GS VGSM ^D25 ” 200 V 120 A 17 m Q t < 250 ns /|[~ 1 G VI. " 1 I Preliminary data sheet TestConditions = R DS on =


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    PDF IXFN120N20 OT-227 E153432

    Diode D25 N10 P

    Abstract: Diode D25 N10 R
    Text: p V DSS MegaMOS FET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100V ^D25 DS on 67 A 25 mQ 75 A 20 mQ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T j = 25“ C to 150°C 100 V V«, ^ 100 V Vos v GSM Continuous ±20 V T ransient ±30


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    PDF 67N10 75N10 O-247 O-204 O-204 O-247 Diode D25 N10 P Diode D25 N10 R

    20NG0

    Abstract: 15n60 DI-5 f sss 20n60
    Text: VDSS MegaMOS FET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V R DS on ^D25 15 A 0.50 Q 20 A 0.35 Ü N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C 600 Tj = 25°C to 150°C; Ros = 1 M il 600 V Vos Continuous


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    PDF 15N60 20N60 O-247 O-204 O-204 O-247 C2-56 C2-57 20NG0 DI-5 f sss 20n60

    STM TO 247 package inductance

    Abstract: SS24A 24N50 ixtm21n50 ixys ixth 21N50
    Text: VDSS IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 M egaM O S FET 500 V 500 V D ^D25 DS on 21 A 0.25 ß 24 A 0.23 a N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS ^ = 25°C to 150°C 500 V VooR ^ = 25°C to 150°C; RGS = 1 MQ 500 V VGS VGSM


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    PDF 21N50 24N50 O-247 O-204 O-204 O-247 C2-40 STM TO 247 package inductance SS24A ixtm21n50 ixys ixth 21N50

    1534F

    Abstract: 50n20
    Text: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous


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    PDF 42N20 50N20 50N20 O-247 O-204 O-247 1534F

    Diode D25 N10 R

    Abstract: 365R IXYs M ir 931 Diode D25 N10 P
    Text: VDSS HiPerFET Power MOSFETs IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100V 100 V D ^D25 DS on 67 A 25 mi2 75 A 20 m il t ^ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 90 G As Symbol Test Conditions V DSS Tj = 25CC to 150°C 100 V VOOB


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    PDF 67N10 75N10 1XFM67W0 75N10 Diode D25 N10 R 365R IXYs M ir 931 Diode D25 N10 P

    72N2

    Abstract: diode 253 SMD-264 TO-264-aa 80N20
    Text: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C


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    PDF IXFK72N20 IXFK80N20 72N20 80N20 80N20 O-264 UL94V-0 IXFK72N2Ô 72N2 diode 253 SMD-264 TO-264-aa

    gs 1117 ax

    Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
    Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions


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    PDF IXFH/IXFM21 IXFH26N50 21N50 24N50 26N50 gs 1117 ax 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500


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    PDF IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b

    IXTH35N30

    Abstract: No abstract text available
    Text: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2


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    PDF 35N30 40N30 to150 O-247 T0-204 IXTH35N30

    15n60

    Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60
    Text: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C


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    PDF O-247 15N60 20N60 O-204 O-247 100ms f sss 20n60 15N60A IXTM15N60 IXTH15N60 5196 IXTH20n60 to-247 D-68623 IXTH20N60

    50N20

    Abstract: 42N20 IXTH42N20
    Text: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200


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    PDF IXTH/IXTM42N20 IXTH/IXTM50N20 42N20 50N20 O-204 O-247 O-247 O-204 IXTH42N20

    IXTH40N30

    Abstract: D2528 N30300
    Text: T X /Y " ’ v MegaMOS FET IXTH/IXTM 35 N30 300 V IXTH 40 N30 300 V IXTM 40 N30 300 V N-Channel Enhancement Mode Symbol Test Conditions VDSS Tj = 25 °C to 150°C 300 V VDGR Tj = 25 °C to 150°C; RGS = 1 M il 300 V Maximum Ratings ' > V ±30 V ^D25 Tc 35N30


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    PDF O-247 35N30 40N30 O-204 O-247 100V1S 100ms Mbflb22b IXTH40N30 D2528 N30300

    200N06

    Abstract: 4835 b 110N06 n
    Text: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 IXFK110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)


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    PDF IXFK110N06 O-264 OT-227 E153432 13Fig, 110NO6 200M06 110N07 200N06 4835 b 110N06 n

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol


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    PDF 67N10 75N10

    80N20

    Abstract: TEA 2029 A
    Text: IÖIXYS HiPerFET Power MOSFETs v p DSS ^D25 DS on 200 V 72 A 35 mû 200 V 80 A 30 m a t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VOSS Tj = 2 5 °C tO l50°C


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    PDF IXFK72N20 IXFK80N20 72N20 80N20 80N20 25value IXFK72N20 TEA 2029 A