MT3809G
Abstract: DEK13
Text: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G
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X-VA-MT3809G-MT3810G-eng
541B182AAG
MT3809G
MT3810G
MT3809G
DEK13
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ped relay
Abstract: PED relay 12vdc mx-12 relay PED relay 11 PED relay 5vdc PED Engineering 0638 mx-5 relay relay 12vdc 07-MX-3
Text: Series 07-MX PED Lim ited 15o - m 150-510 150-511 150-512 Description A sub miniature relay having a single "m ake" contact for switching 5 amps at 250VAC/30VDC. A small footprint encourages high packing density. A pcb socket is also available. Contacts Form
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250VAC/30VDC.
250VAC/150W.
30m0hms.
10msecs
750VAC
3000VAC
ped relay
PED relay 12vdc
mx-12 relay
PED relay 11
PED relay 5vdc
PED Engineering
0638
mx-5 relay
relay 12vdc
07-MX-3
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PED relay
Abstract: PED relay 12vdc PED relay 5vdc PED 07-MX-24 PED Engineering ped relay cambridge RELAY md 12 07-MX-3 07-MX-6 07-MX-9
Text: Series 07-MX PED Lim ited 150-501 150-510 150-511 150 -512 V ! Description A sub m iniature relay having a single "m a k e " co nta ct fo r sw itch in g 5 am ps at 250VAC/30VDC A small fo o tp rin t encourages high packing d en sity A pcb socket is also available
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07-MX
250VAC/30VDC
250VAC/30VDC
250VAC/150W
30xperminute)
30m0hms
10msecs
750VAC
3000VAC
PED relay
PED relay 12vdc
PED relay 5vdc
PED 07-MX-24
PED Engineering
ped relay cambridge
RELAY md 12
07-MX-3
07-MX-6
07-MX-9
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a
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FSJ055D,
FSJ055R
1-800-4-HARRIS
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traveler
Abstract: No abstract text available
Text: FSL110D, FSL110R Semiconductor Data Sheet 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s October 1998
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FSL110D,
FSL110R
1-800-4-HARR
traveler
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transistor sem 2302
Abstract: No abstract text available
Text: FSL214D, FSL214R S e m iconductor October 1998 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s File Number
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FSL214D,
FSL214R
1-800-4-HARR
transistor sem 2302
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Untitled
Abstract: No abstract text available
Text: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.
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FSS23A0D,
FSS23A0R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSYC163D, FSYC163R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s File N u m b er
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FSYC163D,
FSYC163R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSYE23A0D, FSYE23A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s File N u m b er
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FSYE23A0D,
FSYE23A0R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSTYC9055D, FSTYC9055R Ju ly 1999 D ata S h eet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.
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FSTYC9055D,
FSTYC9055R
023J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSL913A0D, FSL913A0R D ata S h eet 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.
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FSL913A0D,
FSL913A0R
-100V,
300J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSL13A0D, FSL13A0R D ata S h eet 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.
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FSL13A0D,
FSL13A0R
180J2
1-800-4-HARRIS
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smd transistor NG
Abstract: No abstract text available
Text: FSYE13A0D, FSYE13A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e
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FSYE13A0D,
FSYE13A0R
1-800-4-HARRIS
smd transistor NG
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Untitled
Abstract: No abstract text available
Text: FSS923A0D, FSS923A0R June 1999 D ata S h eet 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.
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FSS923A0D,
FSS923A0R
-200V,
650J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: N E C 3QE D ELECTRONICS INC • "p -fl-g l L427S2S Q 0 2 U 4 0 3 ■ PHOTO COUPLER PS2007B HIGH SPEED PHOTO COUPLER DESCRIPTION The PS2007B is a high speed p h o to coupler containing a GaAsP lig h t e m ittin g diode and an integrated de tecto r consisting o f a pho to d io d e and a high gain linear am p lifier th a t drives a s c h o ttk y clam ped open co lle c to r o u tp u t
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L427S2S
PS2007B
PS2007B
1000E
b427S2S
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PED relay
Abstract: belling lee P.E.D. relay ped relays
Text: Introduction BLP Com ponents and Dialight design, develop and manufacture a w ide range o f electrical and electronic products for diverse markets - industrial, defence, commercial and domestic. The company's activities are supported by extensive in-house'
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BS9000
PED relay
belling lee
P.E.D. relay
ped relays
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MP227A Analogic
Abstract: bypass switch 3pole chopper transformer 110 volt p227a
Text: MP227A Precision Isolation Amplifier Replaces Relays and Filter Elements in Multichannel DASs Introduction The Analogic MP227A is a precision isolation amplifier that provides an unparalleled cost-effective combination of linearity, stability, and isolation.
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MP227A
MP227A
P227A
MP227As
MP227As
MP227A Analogic
bypass switch 3pole
chopper transformer 110 volt
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spike guard circuit diagram
Abstract: thermocouple multiplexer MP277A MP227A RN55E bypass switch 3pole MP277 mp22 MP27
Text: A N A L O G IC , M P227A Isolation Amplifier D escription Features The A nalogic MP227A is a precision isolation a m p lifie r th a t provides an unparalleled com bination of lin e a ri ty, sta b ility, isolation, and very low cost. It is designed prim arily to
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MP227A
MP227A.
MP227A
spike guard circuit diagram
thermocouple multiplexer
MP277A
RN55E
bypass switch 3pole
MP277
mp22
MP27
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PED relay
Abstract: sn7451b PED relay 95
Text: O'IlNilN/Ti T he I n f i n i t e P o w e r o f I LIN Doc D ual P N R ot eripheral P ositive eco mmended DESCRIPTION 4 -1 AND 1990/91 for KEY Typical applications include high-speed logic buffers, pow er drivers, relay drivers, line drivers, and m emory drivers. The SG55451B/SG55461/
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SG55451B/SG75451B
SG55451B/SG55461/SG55471
SG75451B/SG75461/SG75471)
SN55451B/61/71
SN7451B/61/71)
20-pin
MIL-STD-883
75451BY
SG75461Y
SG75471Y
PED relay
sn7451b
PED relay 95
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PED relay
Abstract: anzac mixer anzac MD MD-425
Text: X MODEL DOUBLE BALANCED MIXER MD-425 RF, LO 5-2000 MHz IF 10-600 MHz LO Power +7 dBm Relay Header MCL Model SRA-11 Replacement Guaranteed Specifications* From -55°C to +85°C F requ ency Range RF, LO Ports IF Port C o nversion Loss 5 - 1000 MHz 1000 - 2000 MHz
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MD-425
SRA-11
PED relay
anzac mixer
anzac MD
MD-425
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Untitled
Abstract: No abstract text available
Text: rZ 7 SGS-THOMSON Ä T # m o ra « ! R VN05H HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN05H V dss 60 V RDS on l0U T Vcc 0.18 a 12 A 36 V . OUTPUT CURRENT (CONTINUOUS): 12A@ Tc=25°C . LOGIC LEVEL 5V COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE SHUT-DOWN
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VN05H
VN05H
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automatic phase selector circuit diagram
Abstract: RAAAK RAZOG PS 307 5A ASEA ABG 10 SELECTOR SWITCH ASEA ABG PS 307 10A asea razog
Text: ASEA Catalogue RK 85-16 E Edition 1 April 1978 File R. Part 1 Reclosing relay type R a AAK For line*! vjith distance protection Single eiiot siigle-phase or three-phase reclosing ¡mended for y ss together with dis tance reiay svpg RAZO G but can be adapted to other distance relays
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Untitled
Abstract: No abstract text available
Text: Hormis S RFP50N05, RFG50N05 Semiconductor 7 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 50A,50V These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI integrated circuits, gives
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RFP50N05,
RFG50N05
TB334
AN7254
AN7260
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Untitled
Abstract: No abstract text available
Text: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFPG40
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