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Vo 80500 TRANSISTOR Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A	OCR Scan	PDF	NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
2SC2570 Abstract: 2sc2570 transistor NE02132 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,	OCR Scan	PDF	NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132
2SC3544 Abstract: IC sn 74 ls 2000 Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry	OCR Scan	PDF	NE944 IS12I IS12S21I b427525 00L5770 2SC3544 IC sn 74 ls 2000
2SC1424 Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F	OCR Scan	PDF	NE734 NE73435) NE73400) PACKAGEOUTUNE30 PACKAGEOUTUNE33 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) 2SC1424 MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185
702 TRANSISTOR Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE	OCR Scan	PDF	NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
JRC 45800 Abstract: 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES . L O W N O IS E : 1.3 dB A T 2 .0 G H z • L O W V O L T A G E O P E R A T IO N • EASY T O M ATCH • H IG H G A IN B A N D W ID T H P R O D U C T : f ï o f 13 G H z • A V A IL A B L E IN S IX L O W C O S T P L A S T IC S U R F A C E	OCR Scan	PDF	NE687 OT-143} NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 JRC 45800 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
2SC1424 Abstract: s2l sot23 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF	OCR Scan	PDF	NE73435) NE734 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) PACKAGEOUTUNE39 2SC1424 s2l sot23