PA1911 Search Results

PA1911 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPA1911ATE-T1-A		Renesas Electronics Corporation	Power MOSFETs for Automotive
UPA1911ATE-A		Renesas Electronics Corporation	Power MOSFETs for Automotive
UPA1911TE-T1-A		Renesas Electronics Corporation	P-Channel Mos Field Effect Transistor For Switching
UPA1911ATE(0)-T1-AT		Renesas Electronics Corporation	Power MOSFETs for Automotive
UPA1911ATE(0)-T1-A		Renesas Electronics Corporation	Power MOSFETs for Automotive

PA1911 Price and Stock

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Renesas Electronics Corporation UPA1911ATE-T1-A MOSFET P-CH 20V SC-95
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA1911ATE-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation UPA1911ATE(0)-T1-A UPA1911A - Field-Effect Transistor, P-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	UPA1911ATE(0)-T1-A		4		1	1 $0.3236 10 $0.3236 100 $0.3042 1000 $0.2751 10000 $0.2751	Buy Now

PA1911 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PA1911		NEC	MOS Field Effect Transistor		Original	PDF

PA1911 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PA1911 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1911 is a switching device which can be driven	Original	PDF	PA1911 PA1911
SC-95 Abstract: marking tk Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION +0.1 0.65–0.15 • Can be driven by a 2.5 V power source • Low on-state resistance RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)	Original	PDF	PA1911A PA1911ATE PA1911A SC-95 marking tk
PA1911 Abstract: D1345 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5-V power source • Low on-state resistance	Original	PDF	PA1911 PA1911 D1345
SC-95 Abstract: PA1911 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1911A P チャネルパワーMOS FET スイッチング用 µPA1911A は，2.5 V 電源系による直接駆動が可能なスイッチング素子外形図（単位: mm）	Original	PDF	PA1911A PA1911A PA1911ATE SC-95 G15044JJ1V0DS SC-95 PA1911
SC-95 Abstract: marking tk Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
SC-95 Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PA1911A PA1911A G15044JJ1V0DS SC-95
D1565 Abstract: 8E-10 uPA1911A MV2002 EGD200 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	D15652JJ1V0AN001 D15652JJ1V0AN FAX044435-9608 D1565 8E-10 uPA1911A MV2002 EGD200
MPA2733GR Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
PA1915 Abstract: m0406 m0339 M-0339 PA19 PA1901 RS0018 PA1912 PA1913 PA1914 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PA1901 PA1902 PA1911A PA1912 PA1913 PA1914 PA1915 PA1916 PA1917 PA1918 PA1915 m0406 m0339 M-0339 PA19 PA1901 RS0018 PA1912 PA1913 PA1914
PA1911 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Motorola TP182 Abstract: NFM60R30T222T1 5 pin PCB Mounted 3.5mm Stereo jack ACM0706-102-2PT SMD150/33-2 tdk ferrite pc30 C1162 NFM60R30T222 10uf 25V capacitor ACM0706 Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MSC8101EVM User’s Manual For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. ii MSC8101EVMUM/D User’s Manual For More Information	Original	PDF	MSC8101EVM MSC8101EVMUM/D MSC8101EVM MCS8101EVMUM/D Motorola TP182 NFM60R30T222T1 5 pin PCB Mounted 3.5mm Stereo jack ACM0706-102-2PT SMD150/33-2 tdk ferrite pc30 C1162 NFM60R30T222 10uf 25V capacitor ACM0706
Untitled Abstract: No abstract text available Text: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven	OCR Scan	PDF	uPA1911 D13455EJ1V0DS00 PA1911