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Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF450 Abstract: IRF450 transistor Text: IRF450.451 P86FR2,R1 IFSMm-öffiS FUT 13 AMPERES 500, 450 VOLTS RDS(ON = 0.4 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan		PDF

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IRF450

Abstract: IRF450 transistor
Text: IRF450.451 P86FR2,R1 IFSMm-öffiS FUT 13 AMPERES 500, 450 VOLTS RDS(ON = 0.4 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged

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