P5003QVG Search Results

P5003QVG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
p5003qv Abstract: No abstract text available Text: Complementary MOSFET ELM34600AA-N •General Description ■Features ELM34600AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40.0mΩ(Vgs=4.5V)	Original	PDF	ELM34600AA-N ELM34600AA-N DEC-19-2005 P5003QVG p5003qv
P5003QVG Abstract: No abstract text available Text: コンプリメンタリーパワー MOSFET ELM34600AA-N •概要 ■特長 ELM34600AA-N は低入力容量 N チャンネル P チャンネル低電圧駆動、低オン抵抗という特・ Vds=30V 性を備えた大電流 MOSFET です。・ Id=7A	Original	PDF	ELM34600AA-N DEC-19-2005 P5003QVG P5003QVG
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	PDF	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34600AA-N •General Description ■Features ELM34600AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40.0mΩ(Vgs=4.5V)	Original	PDF	ELM34600AA-N ELM34600AA-N 20Current DEC-19-2005 P5003QVG
复合 Abstract: ELM34600AA Text: 复合沟道 MOSFET ELM34600AA-N •概要 ■特点 ELM34600AA-N 是低输入电容低工 N 沟道作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-5A ·Rds on < 27.5mΩ(Vgs=10V) ·Rds(on) < 45mΩ(Vgs=-10V)	Original	PDF	ELM34600AA-N DEC-19-2005 P5003QVG 复合 ELM34600AA