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    P1035 Search Results

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    P1035 Price and Stock

    Vibronics Inc VJP10-35C270M2

    VIBRATION MOTOR 16K RPM 2.6G
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    DigiKey VJP10-35C270M2 Tray 5,528 1
    • 1 $4.97
    • 10 $4.97
    • 100 $3.9058
    • 1000 $3.46121
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    Cornell Dubilier Electronics Inc 715P10354JA3

    CAP FILM 10000PF 5% 400VDC RAD
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    DigiKey 715P10354JA3 Bulk 992 1
    • 1 $3.27
    • 10 $2.15
    • 100 $1.5575
    • 1000 $1.24144
    • 10000 $1.1127
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    Mouser Electronics 715P10354JA3 962
    • 1 $3.04
    • 10 $2.12
    • 100 $1.55
    • 1000 $1.23
    • 10000 $1.11
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    Richardson RFPD 715P10354JA3 1,000
    • 1 -
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    • 1000 $1.14
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    Cornell Dubilier Electronics Inc 716P10354JA3

    CAP FILM 10000PF 5% 400VDC RAD
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    DigiKey 716P10354JA3 Bulk 972 1
    • 1 $2.34
    • 10 $1.509
    • 100 $1.0699
    • 1000 $0.83597
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    Mouser Electronics 716P10354JA3 394
    • 1 $2.09
    • 10 $1.49
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    • 1000 $0.766
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    Richardson RFPD 716P10354JA3 1,000
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    • 1000 $0.72
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    Cornell Dubilier Electronics Inc 716P10356JA3

    CAP FILM 10000PF 5% 600VDC RAD
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    DigiKey 716P10356JA3 Bulk 942 1
    • 1 $2.66
    • 10 $1.728
    • 100 $1.235
    • 1000 $0.97226
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    Mouser Electronics 716P10356JA3 642
    • 1 $2.39
    • 10 $1.73
    • 100 $1.23
    • 1000 $0.936
    • 10000 $0.853
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    TTI 716P10356JA3 Bulk 1,000
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    • 10000 $0.83
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    Richardson RFPD 716P10356JA3 1,000
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    • 1000 $0.85
    • 10000 $0.85
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    Cornell Dubilier Electronics Inc 715P10354JD3

    CAP FILM 10000PF 5% 400VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 715P10354JD3 Bulk 156 1
    • 1 $3.27
    • 10 $2.152
    • 100 $1.5589
    • 1000 $1.24254
    • 10000 $1.11372
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    Mouser Electronics 715P10354JD3 44
    • 1 $3.09
    • 10 $1.92
    • 100 $1.66
    • 1000 $1.66
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    Newark 715P10354JD3 Bulk 90 1
    • 1 $2.13
    • 10 $2.13
    • 100 $1.84
    • 1000 $1.8
    • 10000 $1.8
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    RS 715P10354JD3 Bulk 3,930 21 Weeks 1
    • 1 $0.79
    • 10 $0.79
    • 100 $0.79
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    • 10000 $0.79
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    TTI 715P10354JD3 Bulk 100
    • 1 -
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    • 100 $1.28
    • 1000 $1.28
    • 10000 $1.28
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    Richardson RFPD 715P10354JD3 100
    • 1 -
    • 10 -
    • 100 $1.82
    • 1000 $1.33
    • 10000 $1.33
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    P1035 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XP1035-BD

    Abstract: P1035-BD
    Text: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that


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    PDF P1035-BD 02-Apr-08 XP1035-BD P1035-BD

    Untitled

    Abstract: No abstract text available
    Text: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that


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    PDF 02-Apr-08 P1035-BD XP1035-BD

    P1035-QH

    Abstract: XP1035-QH XP1035-QH-0G00 XP1035-QH-0G0T XP1035-QH-EV1 xp1035
    Text: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH February 2010 - Rev 17-Feb-10 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description


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    PDF P1035-QH 17-Feb-10 XP1035-QH P1035-QH XP1035-QH-0G00 XP1035-QH-0G0T XP1035-QH-EV1 xp1035

    XP1035-BD

    Abstract: P1035-BD
    Text: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD December 2007 - Rev 04-Dec-07 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that


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    PDF P1035-BD 04-Dec-07 XP1035-BD P1035-BD

    P1035-QH

    Abstract: XP1035-QH XP1035-QH-0G00 XP1035-QH-0G0T XP1035-QH-EV1 xp1035
    Text: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description The P1035-QH is a packaged linear power amplifier


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    PDF P1035-QH 02-Apr-08 XP1035-QH P1035-QH XP1035-QH-0G00 XP1035-QH-0G0T XP1035-QH-EV1 xp1035

    Untitled

    Abstract: No abstract text available
    Text: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description The P1035-QH is a packaged linear power amplifier


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    PDF 02-Apr-08 P1035-QH XP1035-QH

    Untitled

    Abstract: No abstract text available
    Text: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH August 2009 - Rev 29-Aug-09 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description The P1035-QH is a packaged linear power amplifier


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    PDF 29-Aug-09 P1035-QH XP1035-QH

    P1035-QH

    Abstract: XP1035-QH xp1035
    Text: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH December 2007 - Rev 12-Dec-07 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description


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    PDF P1035-QH 12-Dec-07 XP1035-QH P1035-QH xp1035

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


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    PDF 2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356

    2SC3355

    Abstract: transistor 2sc3355 and application PA33 marking PA33
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS


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    PDF 2SC3355 2SC3355 transistor 2sc3355 and application PA33 marking PA33

    2SC3357

    Abstract: RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620
    Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.


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    PDF 2SC3357 2SC3357 RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620

    Untitled

    Abstract: No abstract text available
    Text: DC DC Part Num P10 - SERIES 10W HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltages * Output Voltages to 8000Vdc * Proportional Output Voltage * Efficiency 80% typ. * 5000 Vdc Output Isolation * Six-Sided Shielded Case * Continuous Short Circuit Protection


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    PDF 8000Vdc

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Norgren SM 900

    Abstract: Norgren SM 960 norgren SM 9120 Norgren SM 920 J 6920 A 9175 norgren 950 norgren Norgren cM 930 P10228 30402
    Text: RM/900 Standard Cylinder Non-magnet and Magnet Piston Double acting ∅ 1 1/4 inch to 14 inch ∅ 32 to 355 mm ● Ideal for a wide range of industrial applications ● Extensive range of mountings ● Rugged, reliable long established design Technical Data


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    PDF RM/900 RM/900/M RM/920/300 Norgren SM 900 Norgren SM 960 norgren SM 9120 Norgren SM 920 J 6920 A 9175 norgren 950 norgren Norgren cM 930 P10228 30402

    marking PA33

    Abstract: 2SC3582 PA33
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters inches low-noise and small signal amplifiers from VHF band to UHF band. Low-


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    PDF 2SC3582 2SC3582 marking PA33 PA33

    2SC3356

    Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.


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    PDF 2SC3356 2SC3356 IC nec 555 transistor 1431 T marking 544 low noise amplifier

    transistor 2sc3355 and application

    Abstract: 2sc3355 2SC3355, npn
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF PU10208EJ01V0DS 2SC3355 transistor 2sc3355 and application 2sc3355 2SC3355, npn

    marking PA33

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range


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    PDF 2SC3582 2SC3582 2SC3582-T PU10210EJ01V0DS marking PA33

    6852 d TRANSISTOR

    Abstract: 2SC3357
    Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for PACKAGE DIMENSIONS Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.


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    PDF 2SC3357 2SC3357 OT-89) S22e-FREQUENCY 6852 d TRANSISTOR

    S56000

    Abstract: CSP1035A CSP1034S DP2V90DX FSK 9600 DP2L17X t32c pll modem v.92 ITU-T V92 l-dp2l34x
    Text: systems age re Product Brief Rev. 1 December 2004 DP2 Data Pump Chip Sets Features Introduction • Two-chip modem solutions: — DP2xxx in 48-pin TQFP. — CSP1034S in a 48-pin TQFP package or P1035A in a 48-pin TQFP package. The new DP2 fam ily of devices is designed to serve


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    PDF 48-pin CSP1034S CSP1035A CSP1034S) CSP1035A) PB03-032DMQD-1 S56000 DP2V90DX FSK 9600 DP2L17X t32c pll modem v.92 ITU-T V92 l-dp2l34x

    GE 2646

    Abstract: 2SC3356 r25 CD/GE S 2646
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.


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    PDF 2SC3356 2SC3356 S22e-FREQUENCY GE 2646 2SC3356 r25 CD/GE S 2646

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB TYP. f= 1.0 GHz PACKAGE DIMENSIONS Units: mm ABSOLUTE MAXIMUM RATINGS T a = 25 °C Collector to Base Voltage


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    PDF 2SC2351

    nec 817

    Abstract: MARKING TRANSISTOR T44 PT4250 2SC3545
    Text: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillator and mixer in a tuner of a TV receiver.


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    PDF 2SC3545 2SC3545 nec 817 MARKING TRANSISTOR T44 PT4250

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS 14 dB TYP. @ f = 1.0 GHz U nits: m m 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)


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    PDF 2SC2351