P008B
Abstract: No abstract text available
Text: ShenZhen HuaXinAn Electronics Co.,Ltd SIDACtor Protection Thyristors P008B Package DO-214AA Description Fast Delivery Time P008B SIDACtor Protection Thyristor protect telecommunications equipment such as ADSL Modems,Router, , Telephone, CCTV Camera,Digital Video Record,Video Capture Card,Twisted-pair video
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P008B
DO-214AA
P008B
TIA-968-A
TIA-968-B
DO-214AA
EIA-481-D
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P008B
Abstract: morocco SGS-THOMSON sgsthomson BFX34
Text: SGS-THOMSON TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o typ. L D G A I E F H B L P008B BFX34 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
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P008B
BFX34
P008B
morocco
SGS-THOMSON
sgsthomson
BFX34
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P008B DIODE
Abstract: STN1N20
Text: STN1N20 N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223 POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STN1N20 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 200 V < 1.5 Ω 1A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED
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STN1N20
OT-223
OT-223
P008B DIODE
STN1N20
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P008B DIODE
Abstract: STN3NF06L
Text: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
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STN3NF06L
OT-223
P008B DIODE
STN3NF06L
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P008B DIODE
Abstract: STN4NF03L
Text: STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET II POWER MOSFET TYPE VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A • ■ TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
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STN4NF03L
OT-223
P008B DIODE
STN4NF03L
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transistor 2N4033
Abstract: 2n4033 datasheet 2N4033
Text: 2N4033 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. c u d TO-39 e t le s t o r P INTERNAL SCHEMATIC DIAGRAM
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2N4033
2N4033
transistor 2N4033
2n4033 datasheet
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P008B DIODE
Abstract: STN1HNC60
Text: STN1HNC60 N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh II MOSFET TYPE STN1HNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V <8Ω 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STN1HNC60
OT-223
P008B DIODE
STN1HNC60
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STN4NE03
Abstract: No abstract text available
Text: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STN4NE03
OT-223
STN4NE03
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STN749
Abstract: No abstract text available
Text: STN749 MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ Ordering Code Marking STN749 N749 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT SOT-223 PLASTIC PACKAGE FOR
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STN749
OT-223
OT-223
STN749
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marking 721
Abstract: BF720 BF721
Text: BF721 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BF721 721 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BF720
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BF721
OT-223
BF720
OT-223
marking 721
BF720
BF721
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bc141-16
Abstract: TRANSISTOR BC141 BC141 BC141 equivalent P008B BC161-16 BC161 transistor
Text: BC141-16 GENERAL PURPOSE TRANSISTOR DESCRIPTION The BC141-16 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A. The complementary PNP type is the BC161-16.
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BC141-16
BC141-16
BC161-16.
TRANSISTOR BC141
BC141
BC141 equivalent
P008B
BC161-16
BC161 transistor
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JESD97
Abstract: N790A STN790A
Text: STN790A MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Features • VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ D.C. CURRENT GAIN, hFE > 100 ■ 3A CONTINUOUS COLLECTOR CURRENT ■ 40V BREAKDOWN VOLTAGE V(BR CER) ■ SOT-223 PLASTIC PACKAGE FOR
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STN790A
OT-223
2002/93/EC
OT-223
JESD97
N790A
STN790A
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Untitled
Abstract: No abstract text available
Text: 2N2219AHR NPN low power transistor for Hi-Rel applications Features • Low voltage ■ Low current ■ Linear gain characteristics Applications ■ Low current switching ■ Linear preamplifier TO-39 Description The 2N2219AHR is a silicon planar epitaxial NPN
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2N2219AHR
2N2219AHR
2N2219AT1
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P008B DIODE
Abstract: STN4NF03L
Text: STN4NF03L N-CHANNEL 30V - 0.039Ω - 4A SOT-223 STripFET POWER MOSFET TYPE STN4NF03L • ■ VDSS RDS on ID 30V <0.05Ω 4A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
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STN4NF03L
OT-223
P008B DIODE
STN4NF03L
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N22A
Abstract: STZT2222A STZT2907A
Text: STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS STZT2907A
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STZT2222A
OT-223
STZT2907A
OT-223
N22A
STZT2222A
STZT2907A
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N4NE03L
Abstract: n4ne ST C 236 DIODE Power MOSFET SOT-223 P008B DIODE N4NE03
Text: STN4NE03L N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE ST N4NE03L • ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.05 Ω 4 A TYPICAL RDS(on) = 0.037 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STN4NE03L
OT-223
N4NE03L
N4NE03L
n4ne
ST C 236 DIODE
Power MOSFET SOT-223
P008B DIODE
N4NE03
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STN3N40K3
Abstract: 3n40k stn3n40k 29-Jun-2010 P008
Text: STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS on max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance
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STN3N40K3
OT-223
OT-223
STN3N40K3
3n40k
stn3n40k
29-Jun-2010
P008
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2N2905A
Abstract: 2N2907A 2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A 2N2907A PNP Transistor equivalent 2N2907A bex st
Text: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose
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2N2905A
2N2907A
2N2905A
2N2907A
2N2905A)
2N2907A)
2N2905a equivalent
2N2907A diagram
2N2905A switch circuit
M2N2905A
2N2907A PNP Transistor
equivalent 2N2907A
bex st
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bcp55 to
Abstract: Marking STMicroelectronics STMicroelectronics marking code bcp55 BCP5216 BCP52-16 BCP55-16
Text: BCP52-16 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BCP52-16 BCP5216 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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BCP52-16
BCP5216
OT-223
BCP55-16
OT-223
bcp55 to
Marking STMicroelectronics
STMicroelectronics marking code
bcp55
BCP5216
BCP52-16
BCP55-16
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Untitled
Abstract: No abstract text available
Text: rZ7 SGS-THOMSON ^ 7 # [ïffloeœiiLiera «® 2N5679 2N5680 HIGH VOLTAGE PNP SILICON TRANSISTOR . 2N5680 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5679, 2N5680 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case intended for use as drivers for high
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2N5679
2N5680
2N5680
2N5679,
2N5681
2N5682
2N5679/2N5680
P008B
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Untitled
Abstract: No abstract text available
Text: STN4NE03L N - CHANNEL 30V - 0.037^ - 4A - SOT-223 STripFET POWER MOSFET TYP E V S TN 4N E03L dss 30 V R D S o n Id < 0 .0 5 Q. 4 A . TYPICAL Ros(on) =0.037 £2 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED
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STN4NE03L
OT-223
OT-223
P008B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON [MSIfiiSilLiSìlKìtÉfflOSS STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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STZT5401
OT-223
P008B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON HDeæHLISTrisîQÜDlgS STN2N06 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 V d ss R DS on I dcont 60 V < 0.250 £2 2 A . TYPICAL RDS(on) =0.21 Q . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW
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STN2N06
OT-223
OT-223
T2N06
OT223
P008B
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Untitled
Abstract: No abstract text available
Text: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.
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N5339
2N5339
2N5339
P008B
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