CXDM4060P
Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET
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CXDM4060P
OT-89
CXDM4060P
OT-89
21x9x9
27x9x17
23x23x13
23x23x23
53x23x23
PB CXDM4060P
MOSFET SMD MARKING CODE
MOSFET marking smd
SOT89 smd marking 13
sot-89 Marking LB
pb sot89 mosfet
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MARKING TR SOT23-6 P MOSFET
Abstract: marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA
Text: ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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ZVP4525E6
OT23-6
OT223
ZVN4525E6
OT23-6
MARKING TR SOT23-6 P MOSFET
marking p52 SOT23-6
marking ma sot23-6
marking QG SOT23-6
marking p52 mosfet
MARKING NB SOT23-6
4422 mosfet
ZVN4525E6
ZVP4525E6
ZVP4525TA
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marking p52 mosfet
Abstract: p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423
Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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ZVP4525Z
OT223
OT23-6
ZVN4525Z
marking p52 mosfet
p52 sot89
p-channel 250V power mosfet
c 103 mosfet
MARKING TR SOT23-6 P MOSFET
ZVN4525Z
ZVP4525Z
ZVP4525ZTA
ZVP4525ZTC
DSA0037423
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ut06p03
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION 1 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.
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UT06P03
UT06P03
OT-89
UT06P03G-AB3-R
QW-R502-156
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.
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UT9435
UT9435
OT-89
UT9435L
UT9435-AB3-R
UT9435L-AB3-R
QW-R502-155
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.
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UT9435
UT9435
UT9435G-AB3-R
UT9435L-TN3-R
UT9435G-TN3-R
UT9435G-S08-R
OT-89
O-252
QW-R502-155
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UT06P03
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION 1 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.
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UT06P03
UT06P03
OT-89
UT06P03L
UT06P03-AB3-R
UT06P03L-AB3-R
QW-R502-156
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UT9435
Abstract: ut9435g DSA0037680
Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.
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UT9435
UT9435
UT9435L
UT9435G
UT9435-AB3-R
UT9435-TN3-R
UT9435-S08-R
UT9435L-AB3-R
UT9435L-TN3-R
UT9435L-S08-R
ut9435g
DSA0037680
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.
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UT06P03
O-252
OT-89
UT06P03
OT-26
UT06P03G-AB3-R
UT06P03G-AG6-R
UT06P03L-TN3-R
UT06P03G-TN3-R
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mosfet marking l
Abstract: 48m marking
Text: CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high
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CXDM4060P
OT-89
28-March
mosfet marking l
48m marking
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Untitled
Abstract: No abstract text available
Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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ZVP4525Z
-250V;
-205mA
OT223
OT23-6
ZVN4525Z
D-81673
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p52 sot89
Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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ZVP4525Z
-250V;
-205mA
OT223
OT23-6
ZVN4525Z
D-81673
p52 sot89
marking p52 SOT23-6
design ideas
TS16949
ZVN4525Z
ZVP4525Z
ZVP4525ZTA
ZVP4525ZTC
complementary MOSFET sot89
p-channel mosfet sot89 5V
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MARKING TR SOT23-6 P MOSFET
Abstract: ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC
Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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ZVP4525G
-250V;
-265mA
OT23-6
OT223
ZVN4525G
OT223
hoo26100
MARKING TR SOT23-6 P MOSFET
ZVN4525G
ZVP4525G
ZVP4525GTA
ZVP4525GTC
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4422 mosfet
Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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ZVP4525G
OT223
OT23-6
ZVN4525G
OT223
4422 mosfet
p-channel mosfet with diode sot89
MARKING TR SOT23-6 P MOSFET
ZVN4525G
ZVP4525G
ZVP4525GTA
ZVP4525GTC
DSA0037419
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p-channel mosfet sot89 5V
Abstract: XP161A11A1PR XP162A11C0PR MOSFET SOT-89 package p-channel mosfet with diode sot89
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.28Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A11C0PR is a P-channel Power MOSFET with low
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OT-89
XP162A11C0PR
OT-89
XP162A11C0PR
XP161A11A1PR
p-channel mosfet sot89 5V
XP161A11A1PR
MOSFET SOT-89 package
p-channel mosfet with diode sot89
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Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low
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OT-89
XP162A12A6PR
OT-89
XP162A12A6PR
XP161A11A1PR
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p-channel mosfet sot89 5V
Abstract: XP162A12A6PR XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low
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OT-89
XP162A12A6PR
OT-89
possible25
XP162A12A6PR
XP161A11A1PR
p-channel mosfet sot89 5V
XP161A11A1PR
MOSFET SOT-89 package
Ultra Low voltage rds mosfet
p-channel mosfet with diode sot89
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT06P03 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ 1 DESCRI PT I ON The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.
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UT06P03
UT06P03
OT-89
UT06P03G-AB3-R
QW-R502-156
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT9435 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.
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UT9435
UT9435
UT9435L
UT9435G
UT9435-AB3-R
UT9435-TN3-R
UT9435-S08-R
UT9435L-AB3-R
UT9435L-TN3-R
UT9435L-S08-R
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Untitled
Abstract: No abstract text available
Text: XP202A0003PR-G P-channel 4V G-S MOSFET PARMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) ( 1) Drain Current(Pulse) * ( 2) Channel Power Dissipation * Channel Temperature SYMBOL RATINGS UNITS VDSS VGSS ID IDP Pd Tch -30 ±20 -5 -20 1.5
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XP202A0003PR-G
OT-89
000/Reel
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XP162A11C0PR
Abstract: No abstract text available
Text: XP162A11C0PR ETR1125_001 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A11C0PR
ETR1125
XP162A11C0PR
OT-89
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XP162A12A6PR
Abstract: p-channel mosfet sot89 5V
Text: XP162A12A6PR ETR1126_001 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A12A6PR
ETR1126
XP162A12A6PR
OT-89
p-channel mosfet sot89 5V
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Untitled
Abstract: No abstract text available
Text: XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A12A6PR-G
ETR1126
XP162A12A6PR-G
OT-89
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XP162A11C0PR
Abstract: p-channel mosfet sot89 5V
Text: XP162A11C0PR-G ETR1125_003 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A11C0PR-G
ETR1125
XP162A11C0PR-G
OT-89
OT-89.
XP162A11C0PR
p-channel mosfet sot89 5V
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