BSS84 P
Abstract: BSS84 GSOT-23
Text: BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical D-MOS transistor in a SOT23 Surface-Mount Device SMD package. 1.2 Features
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BSS84
BSS84 P
BSS84
GSOT-23
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sot89-3
Abstract: No abstract text available
Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection
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S-90P
OT-23-3
OT-89-3
OT-23-3,
OT-89-3
S-90P0112SMA
S-90P0222SUA
S-90P0332SUA
sot89-3
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XP152A01D8MR
Abstract: No abstract text available
Text: XP152A01D8MR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.48Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP152A01D8MR is a P-Channel Power MOS FET with low on-state
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XP152A01D8MR
OT-23
XP152A01D8MR
OT-23
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S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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FET MARKING CODE
Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
90P03
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Untitled
Abstract: No abstract text available
Text: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type
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MMFTP84
MMFTP84
OT-23
O-236)
UL94V-0
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S-90P0222SUA
Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
OT-89-3
S-90P0222SUA-TF
90P03
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0332SUA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Text: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
OT-89-3
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
13003 TRANSISTOR equivalent
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S-90P0112SMA
Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
OT-23-3
S-90P0112SMA-TF
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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TRANSISTOR SMD MARKING CODE
Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 SMD TRANSISTOR MARKING BR TRANSISTOR SMD MARKING CODE A1 SMD TRANSISTOR MARKING DE K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE SP BSS84 Equivalent smd code marking sot23 marking A1 smd transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 18 2003 Aug 04 Philips Semiconductors Product specification P-channel enhancement mode vertical
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M3D088
BSS84
SCA75
613510/03/pp9
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD CODE PACKAGE SOT23
SMD TRANSISTOR MARKING BR
TRANSISTOR SMD MARKING CODE A1
SMD TRANSISTOR MARKING DE
K TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE SP
BSS84 Equivalent
smd code marking sot23
marking A1 smd transistor
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TRANSISTOR SMD MARKING CODE dk
Abstract: TRANSISTOR SMD MARKING CODE A1 BSS84 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD CODE 339
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode
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BSS84
SC13b
SCA54
137107/00/02/pp12
TRANSISTOR SMD MARKING CODE dk
TRANSISTOR SMD MARKING CODE A1
BSS84
TRANSISTOR SMD MARKING CODE SP
TRANSISTOR SMD CODE 339
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BSH204
Abstract: ld smd transistor p-channel mos sot23 transistor SOT23 J5 SMD A8 Transistor transistor smd JR smd transistor LD smd transistor js smd transistor A8
Text: DISCRETE SEMICONDUCTORS PÂTÂ SMEET BSH204 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b Philips Sem iconductors 1997 Nov 26 PHILIPS Philips Semiconductors Objective specification P-channel enhancement mode
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BSH204
SC13b
BSH204
ld smd transistor
p-channel mos sot23
transistor SOT23 J5
SMD A8 Transistor
transistor smd JR
smd transistor LD
smd transistor js
smd transistor A8
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Untitled
Abstract: No abstract text available
Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)
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T0220
14-Pin
VQ2001J
VQ200IP
VQ2004J
T0236
TP0101T
TP0202T
TP06I0T
VP06I0T
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TRANSISTOR SMD MARKING CODE SP
Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL
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BSS84
1997Jun
TRANSISTOR SMD MARKING CODE SP
smd "code rc" transistor
marking code sp
TRANSISTOR SMD MARKING CODE X D
transistor SMD 520
transistor SMD MARKING CODE
marking code br SMD transistor
marking code SS SOT23 transistor
smd transistor 24 sot23
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Untitled
Abstract: No abstract text available
Text: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement
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bbS3131
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TRANSISTOR smd FQ
Abstract: smd transistor sy
Text: philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH201 PINNING - SOT23 FEATURES • High-speed switching PIN SYMBOL • No secondary breakdown 1 g • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain DESCRIPTION
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BSH201
TRANSISTOR smd FQ
smd transistor sy
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smd transistor LY
Abstract: transistor smd 303 smd transistor 304
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 FEATURES PINNING - SOT23 • Low threshold voltage PIN SYMBOL DESCRIPTION • Direct interface to C-MOS, TTL, etc. 1 • High-speed switching 2 g s gate
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BSS84
PARAMET97Jun
smd transistor LY
transistor smd 303
smd transistor 304
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor BSH202 FEATURES PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain
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BSH202
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02p SMD TRANSISTOR
Abstract: No abstract text available
Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application
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bbS3131
BST82
175DSon
02p SMD TRANSISTOR
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BSH205
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES BSH205 PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL, etc. 2 g s gate • Very low threshold.
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BSH205
1997Jun
BSH205
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