Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P-CHANNEL LOGIC LEVEL POWERTRENCHTM MOSFET Search Results

    P-CHANNEL LOGIC LEVEL POWERTRENCHTM MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL LOGIC LEVEL POWERTRENCHTM MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDS6575

    Abstract: F63TNR F852 SOIC-16
    Text: November 1998 FDS6575 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original
    FDS6575 OT-23 FDS6575 F63TNR F852 SOIC-16 PDF

    d7566

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original
    FDS6675 OT-23 d7566 PDF

    Untitled

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original
    FDS6675 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG316P P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original
    FDG316P SC70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG316P P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original
    FDG316P SC70-6 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS6685 FDS9953A L86Z FDS6685 FS
    Text: FDS6685 P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    FDS6685 CBVK741B019 F011 F63TNR F852 FDS6685 FDS9953A L86Z FDS6685 FS PDF

    7w66

    Abstract: Si4435DY D665
    Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    Si4435DY 7w66 D665 PDF

    CBVK741B019

    Abstract: F63TNR FDC633N FDC658P SOIC-16 r rca 631
    Text: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDC658P OT-23 CBVK741B019 F63TNR FDC633N FDC658P SOIC-16 r rca 631 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDS6975 OT-23 NF073 PDF

    FDS4435

    Abstract: IC fds4435 aaas SA2A da2aa 7w66 fds4435 mosfet
    Text: FDS4435 P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    FDS4435 FDS4435 IC fds4435 aaas SA2A da2aa 7w66 fds4435 mosfet PDF

    FDS4435

    Abstract: IC fds4435 7w66 fds4435 mosfet SA2A "aaqa AAAS
    Text: FDS4435 P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    FDS4435 FDS4435 IC fds4435 7w66 fds4435 mosfet SA2A "aaqa AAAS PDF

    FDS6975

    Abstract: SOIC-16
    Text: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDS6975 OT-23 FDS6975 SOIC-16 PDF

    CBVK741B019

    Abstract: F63TNR FDC633N FDC658P SOIC-16
    Text: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDC658P OT-23 CBVK741B019 F63TNR FDC633N FDC658P SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDS6975 OT-23 PDF

    FDC658P

    Abstract: SOIC-16
    Text: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDC658P OT-23 FDC658P SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS6609A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    FDS6609A PDF

    7w66

    Abstract: No abstract text available
    Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    Si4435DY 7w66 PDF

    858P

    Abstract: F63TNR FDR858P SOIC-16
    Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little


    Original
    FDR858P OT-23 858P F63TNR FDR858P SOIC-16 PDF

    858P

    Abstract: P-Channel Logic Level PowerTrenchTM MOSFET FDR858P SOIC-16 Single P-Channel, Logic Level, PowerTrench MOSFET
    Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little


    Original
    FDR858P OT-23 858P P-Channel Logic Level PowerTrenchTM MOSFET FDR858P SOIC-16 Single P-Channel, Logic Level, PowerTrench MOSFET PDF

    FDS4953

    Abstract: No abstract text available
    Text: February 1999 FDS4953 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low


    Original
    FDS4953 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little


    Original
    FDR858P 028ications PDF

    FDS6975

    Abstract: F63TNR F852 L86Z SOIC-16
    Text: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDS6975 OT-23 FDS6975 F63TNR F852 L86Z SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    FDS6975 OT-23 PDF

    Single P-Channel, Logic Level, PowerTrench MOSFET

    Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
    Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.


    Original
    FDR8308P Single P-Channel, Logic Level, PowerTrench MOSFET P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16 PDF