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    P-CHANNEL ENHANCEMENT FET Search Results

    P-CHANNEL ENHANCEMENT FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL ENHANCEMENT FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ACE1543B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for


    Original     		PDF ACE1543B

    Untitled

    Abstract: No abstract text available
    Text: ACE2303B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for


    Original     		PDF ACE2303B

    Untitled

    Abstract: No abstract text available
    Text: ACE9435B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for


    Original     		PDF ACE9435B

    marking 652 fairchild

    Abstract: No abstract text available
    Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC652P NF073 marking 652 fairchild

    P-Channel Enhancement Mode Vertical DMOS FET

    Abstract: ZVP2120A ZVP2120C
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS


    Original     		PDF ZVP2120C ZVP2120A ZVP2120A -150mA P-Channel Enhancement Mode Vertical DMOS FET ZVP2120C

    ZVP2120A

    Abstract: to92 fet p channel DSA003787
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS


    Original     		PDF ZVP2120C ZVP2120A ZVP2120A to92 fet p channel DSA003787

    to92 fet p channel

    Abstract: ZVP2110A ZVP2110C P-Channel Enhancement Mode Vertical DMOS FET
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS


    Original     		PDF ZVP2110C ZVP2110A ZVP2110A -375mA to92 fet p channel ZVP2110C P-Channel Enhancement Mode Vertical DMOS FET

    ZVP2110A

    Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003787
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS


    Original     		PDF ZVP2110C ZVP2110A ZVP2110A P-Channel FET 100v to92 to92 fet p channel DSA003787

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZVP2120A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω G REFER TO ZVP2120A FOR GRAPHS D G D S E-Line


    Original     		PDF ZVP2120A ZVP2120C ZVP2120A -150mA -150mA

    ZVP2120A

    Abstract: P-Channel FET 100v to92
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS


    Original     		PDF ZVP2120C ZVP2120A ZVP2120A P-Channel FET 100v to92

    C1550

    Abstract: p-channel 250V power mosfet
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing


    Original     		PDF TC1550 MS-012, DSFP-TC1550 A012508 C1550 p-channel 250V power mosfet

    ZVP2110A

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZVP2110A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω G REFER TO ZVP2110A FOR GRAPHS D G D S E-Line TO92 Compatible


    Original     		PDF ZVP2110A ZVP2110C ZVP2110A -375mA -375mA

    Untitled

    Abstract: No abstract text available
    Text: June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS332P

    620 tg diode

    Abstract: No abstract text available
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced


    Original     		PDF TC1550 TC1550 DSFP-TC1550 A091608 620 tg diode

    Dn5dp

    Abstract: No abstract text available
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced


    Original     		PDF TC1550 MS-012, F071408. DSFP-TC1550 A082108 Dn5dp

    Piezoelectric 1Mhz

    Abstract: p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G 10nF 250v P-channel MOSFET VGS -25V
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors


    Original     		PDF TC1550 TC1550TG-G 27BSC DSFP-TC1550 NR011707 Piezoelectric 1Mhz p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 10nF 250v P-channel MOSFET VGS -25V

    c2320

    Abstract: TC2320TG 125OC TC2320 TC2320TG-G
    Text: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode normally-off


    Original     		PDF TC2320 TC2320TG MS-012, DSFP-TC2320 A102607 c2320 125OC TC2320 TC2320TG-G

    Untitled

    Abstract: No abstract text available
    Text: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure


    Original     		PDF TC2320 TC2320 DSFP-TC2320 B122208

    Piezoelectric 1Mhz

    Abstract: piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G
    Text: TC1550 Initial Release N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors


    Original     		PDF TC1550 TC1550TG-G 27BSC DSFP-TC1550 NR092806 Piezoelectric 1Mhz piezoelectric transducer 27BSC MD1210K6 TC1550

    TC2320TG-G

    Abstract: 125OC 27BSC TC2320 TC2320TG
    Text: TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode normally-off


    Original     		PDF TC2320 TC2320TG 27BSC DSFP-TC2320 C112206 TC2320TG-G 125OC 27BSC TC2320

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
    Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .


    OCR Scan     		PDF IRFU9110, IRFR9110 IRFU9120, IRFR9120 IRFR9220, IRFU9220 RFD8P06E, RFD8P06ESM, RFP8P06E RFD15P05, 100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode

    Untitled

    Abstract: No abstract text available
    Text: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement


    OCR Scan     		PDF bbS3131

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 00E5bEE SEM « A P X Philips Semiconductors BSS131 Data sheet status P r e lim in a r y s p e c ific a tio n date of issue A p r il 1 9 9 1 N-channel enhancement mode vertical D-MOS FET N AUER PHILIPS/DISCRETE DESCRIPTION QUICK REFERENCE DATA Silicon n-channel enhancement


    OCR Scan     		PDF bbS3T31 00E5bEE BSS131

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


    OCR Scan     		PDF T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T