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    P CHANNEL MOSFET DRIVER Search Results

    P CHANNEL MOSFET DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL MOSFET DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    P-channel power mosfet 30V

    Abstract: mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 OT-953 100mA 24-September OT-953 P-channel power mosfet 30V mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS

    W360

    Abstract: FW360
    Text: Ordering number : ENN7556 FW360 N-Channel and P-Channel Silicon MOSFETs FW360 Ultrahigh-Speed Switching, Motor Driver Applications Preliminary Features • The FW360 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129


    Original     		PDF ENN7556 FW360 FW360 FW360] W360

    CXDM4060P

    Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
    Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET


    Original     		PDF CXDM4060P OT-89 CXDM4060P OT-89 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet

    s2533

    Abstract: FW377
    Text: FW377 Ordering number : ENA0977 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW377 General-Purpose Switching Device Applications Features • • • For motor drivers, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage


    Original     		PDF FW377 ENA0977 PW10s) PW100ms) A0977-6/6 s2533 FW377

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original     		PDF IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .


    Original     		PDF OT-363 CJ7252KDW OT-363 2N7002K CJ502K

    Untitled

    Abstract: No abstract text available
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 OT-953 OT-953 100mA 25-January

    VDS16V

    Abstract: n mosfet low vgs
    Text: CMUDM8005 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8005 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMUDM8005 OT-523 13in2 200mA 200mA, VDS16V n mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8004 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMUDM8004 OT-523 CMUDM7004 200mA 100mA 430mA

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG inherent00mA

    marking 5c8

    Abstract: CMUDM8005 C 38 marking code diode
    Text: CMUDM8005 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8005 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMUDM8005 OT-523 13in2 27-September 200mA 200mA, marking 5c8 C 38 marking code diode

    Untitled

    Abstract: No abstract text available
    Text: CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8004 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMUDM8004 OT-523 100mA 430mA 200mA

    marking code BC

    Abstract: No abstract text available
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 OT-953 35GSSF, 100mA marking code BC

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG i00mA

    Untitled

    Abstract: No abstract text available
    Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)


    Original     		PDF TPCP8407

    Untitled

    Abstract: No abstract text available
    Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)


    Original     		PDF TPCP8407

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8120TG SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8120TG is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMLDM8120TG OT-563 28-January

    Untitled

    Abstract: No abstract text available
    Text: CMUDM8005 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8005 is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMUDM8005 OT-523 300mW 200mA 200mA,

    CMUDM8004

    Abstract: mosfet marking code NC
    Text: CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8004 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMUDM8004 OT-523 100mA 430mA 200mA 15-March mosfet marking code NC

    TC2320TG

    Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG -200mA ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA

    Untitled

    Abstract: No abstract text available
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 CMNDM8001 OT-953 OT-953 22-August

    EIGHT MOSFET ARRAY

    Abstract: EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY AP0130NA T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY
    Text: A T & T MELEC I C SSE D • □□5002b DDD2flS3 3 ■ OCTAL HIGH-VOLTAGE P-CHANNEL MOSFET ARRAY_ AP0130NA PRELIMINARY ^ Monolithic P-Channel Enhancement-Mode Description The AP0130NA Octal High-Voltage P-Channel MOSFET Array contains eight P-Channel DMOS drivers configured


    OCR Scan     		PDF AP0130NA T-43-25 AP0130NA EIGHT MOSFET ARRAY EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY