Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P10 Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT50P10
-100V
UTT50P10
-100V
UTT50P10L-TA3-T
UTT50P10G-TA3-T
O-220
QW-R502-607
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT40P04
UTT40P04
UTT40P04L-TA3-T
UTT40P04G-TA3-T
QW-R502-616
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FDD4141
Abstract: No abstract text available
Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
-PA52
FDD4141
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FDD4141
Abstract: Fairchild FDD4141
Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
-PA52
FDD4141
Fairchild FDD4141
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Untitled
Abstract: No abstract text available
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
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FDD4141-F085
Abstract: FDD4141 25c337 fdd4141_f085 Fairchild FDD4141
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
FDD4141-F085
25c337
fdd4141_f085
Fairchild FDD4141
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Untitled
Abstract: No abstract text available
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P06 Power MOSFET -50A, -60V P-CHANNEL D-S POWER MOSFET DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P06
UTT50P06
UTT50P06L-TA3-T
UTT50P06G-TA3-T
QW-R502-596
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P06 Power MOSFET -50A, -60V P-CHANNEL D-S POWER MOSFET DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P06
UTT50P06
UTT50P06L-TA3-T
UTT50P06G-TA3-T
UTT50P06L-TN3-T
UTT50P06G-TN3-T
UTT50P06L-TN3-R
UTT50P06G-TN3-R
QW-R502-596,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT50P06 Power MOSFET -50A, -60V P-CHANNEL D-S POWER MOSFET 1 TO-220 DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P06
O-220
UTT50P06
O-262
O-252
UTT50P06L-TA3-T
UTT50P06G-TA3-T
UTT50P06L-TN3-T
UTT50P06G-TN3-T
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UTT70P10
Abstract: UTC 225
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT70P10 Power MOSFET 70A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT70P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT70P10
UTT70P10
O-220
UTT70P10L-TA3-T
UTT70P10G-TA3-T
QW-R502-725
UTC 225
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT100P03
UTT100P03
UTT100P03L-TA3-T
UTT100P03G-TA3-T
QW-R502-697
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P04 Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P04
UTT50P04
O-252
UTT50P04L-TN3-R
UTT50P04G-TN3-R
QW-R502-598
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT65P04 Power MOSFET 65A, 40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT65P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT65P04
UTT65P04
UTT65P04L-TA3-T
UTT65P04G-TA3-T
O-220
QW-R502-615
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7P30L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7P30 POWER MOSFET 6.0A, 300V, SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The UTC 7P30 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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7P30L-TA3-T
7P30G-TA3-T
O-220
QW-R502-918
7P30L
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IRF P CHANNEL MOSFET
Abstract: MOSFET 150 N IRF N-P Channel mosfet
Text: PD - 96106 IRF7307QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET
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IRF7307QPbF
EIA-481
EIA-541.
IRF P CHANNEL MOSFET
MOSFET 150 N IRF
N-P Channel mosfet
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EIA-541
Abstract: IRF7101 IRF7307PBF
Text: PD - 95179 IRF7307PbF Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET 1 8
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IRF7307PbF
EIA-481
EIA-541.
EIA-541
IRF7101
IRF7307PBF
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Untitled
Abstract: No abstract text available
Text: PD - 95179 IRF7307PbF Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET 1 8
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IRF7307PbF
EIA-481
EIA-541.
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IRF7307
Abstract: P channel MOSFET 10A HEXFET SO-8 AN-994 P Channel Ultra Low Gate Charge
Text: PD - 9.1242B IRF7307 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2
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IRF7307
IRF7307
P channel MOSFET 10A
HEXFET SO-8
AN-994
P Channel Ultra Low Gate Charge
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AN-994
Abstract: IRF7106
Text: PD - 9.1098B IRF7106 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 3 6 4 5
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IRF7106
AN-994
IRF7106
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT40P04 50A, 40V P-CHANNEL POWER MOSFET 1 1 TO - 251 1 TO-252D 1 TO - 252 FEATURES * R DS ON <20mΩ @ V GS =-10V, I D =-12.7A, R DS(ON) <30mΩ@ V GS =-4.5V, I D =-10.4A TO-220 DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s
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UTT40P04
O-252D
O-220
UTT40P04
UTT40P04L-TA3-T
UTT40P04G-TA3-T
UTT40P04L-TM3-T
QW-R502-616
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AN-994
Abstract: IRF7107
Text: PD - 9.1099B IRF7107 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 3 6 4 5 N-Ch
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1099B
IRF7107
AN-994
IRF7107
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F7101
Abstract: IRF7101
Text: PD - 96106A IRF7307QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2
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6106A
IRF7307QPbF
ava61
EIA-481
EIA-541.
F7101
IRF7101
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET
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1099B
55MS2
002b511
IRF7107
002b5
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