Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P 80 3L Search Results

    SF Impression Pixel

    P 80 3L Price and Stock

    TAIYO YUDEN LSQPB160807T4R7M

    Power Inductors - SMD 4.7uH 0603 20% HI CURR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LSQPB160807T4R7M 3,000
    • 1 $0.28
    • 10 $0.186
    • 100 $0.144
    • 1000 $0.128
    • 10000 $0.109
    Buy Now

    TAIYO YUDEN LSQPB160808TR45M

    Power Inductors - SMD 0.45uH 0603 20% HI CURR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LSQPB160808TR45M 2,989
    • 1 $0.29
    • 10 $0.255
    • 100 $0.182
    • 1000 $0.124
    • 10000 $0.112
    Buy Now

    TAIYO YUDEN LSQPB160807T6R8M

    Power Inductors - SMD 6.8uH 0603 20% HI CURR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LSQPB160807T6R8M 2,872
    • 1 $0.28
    • 10 $0.184
    • 100 $0.143
    • 1000 $0.131
    • 10000 $0.094
    Buy Now

    TAIYO YUDEN LLQPB160807T4R7M

    Power Inductors - SMD INDUCTOR, BOTTOM-SURFACE, POWER WOUND, 0603, 4.7uH20%, T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LLQPB160807T4R7M 2,730
    • 1 $0.29
    • 10 $0.255
    • 100 $0.182
    • 1000 $0.124
    • 10000 $0.112
    Buy Now

    TAIYO YUDEN LSQPB160807T100M

    Power Inductors - SMD 10uH 0603 20% HI CURR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LSQPB160807T100M 2,725
    • 1 $0.29
    • 10 $0.2
    • 100 $0.153
    • 1000 $0.124
    • 10000 $0.109
    Buy Now

    P 80 3L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance


    Original
    PDF SQM50P08-25L AEC-Q101 O-263 O-263 SQM50P08-25L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    72194

    Abstract: No abstract text available
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original
    PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 72194

    Untitled

    Abstract: No abstract text available
    Text: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance


    Original
    PDF SQM50P08-25L AEC-Q101 O-263 SQM50P08-25L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 VDS (V) - 80 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original
    PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si2337

    Abstract: SI2337DS-T1-E3
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2337

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQM50P08-25L AEC-Q101 2002/95/EC O-263 O-263 SQM50P08-25L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    SUM110P08-11L rev

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original
    PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUM110P08-11L rev

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS www.vishay.com Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.270 at VGS = -10 V -2.2 0.303 at VGS = -6 V -2.1 VDS (V) -80 Qg (TYP.) 7 • TrenchFET power MOSFET • Material categorization: for definitions of compliance please see


    Original
    PDF Si2337DS OT-23 O-236) Si2337DS-T1-E3 Si2337DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SQM50P08-25L

    Abstract: No abstract text available
    Text: SQM50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQM50P08-25L AEC-Q101 2002/95/EC O-263 O-263 SQM50P08-25L-GE3 11-Mar-11 SQM50P08-25L

    Untitled

    Abstract: No abstract text available
    Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 11-Mar-11

    TL431 SOT-23

    Abstract: TO-226A TL431 sot package sot-23 tl431 sot23 texas 226a surface mount diode tlv431a loop control TL431 tl431 TRANSISTOR equivalent TL431 transistor TL431
    Text: 8 • SHOWCASE DECEMBER 1995 P O W E R S U P P L Y Product Features ■ Low-voltage operation.to 1.24 V ■ 1% reference voltage tolerance ■ Adjustable output voltage, VO = Vref to 6 V ■ Low operational cathode current.80 µA ■ 0.25 Ω typical output impedance


    Original
    PDF OT-23 TLV431A TL431 TLV431A O-226A TL431 SOT-23 TO-226A TL431 sot package sot-23 tl431 sot23 texas 226a surface mount diode loop control TL431 tl431 TRANSISTOR equivalent transistor TL431

    2-21F1A

    Abstract: No abstract text available
    Text: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03


    Original
    PDF 2-21F1A 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: HI5735 Semiconductor 12-Bit, 80 MSPS, High Speed Video D/A Converter January 1998 Description Features Throughput R a t e . 80 MSPS Low P o w e r . . ,650m W Integral Linearity E r r o r .


    OCR Scan
    PDF HI5735 12-Bit, HI5735 HBC-10)

    TMS416160

    Abstract: TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P L6VE
    Text: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160A- MAY 1995 - REVISED JUNEJ995 '4xx160/P-60 '4xx160/P-70 4xx160/P-80 TIME tCAC MAX 15 ns 18 ns 20 ns ACCESS READ OR


    OCR Scan
    PDF TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD 16-BIT TMS416160 TMS416160P TMS418160 TMS426160 TMS426160P TMS428160 L6VE

    pnp 3Fp

    Abstract: marking 3gp marking code 3Fp 3bp sot 23 marking sot23 marking u8 marking 3Bp BC856B 3BP marking code u8 marking 3fp SOT23 SOT MARKING 3lp
    Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 ~ V CEX max. 80 50 30 V Collector-emitter voltage open base - v CEO max. 65 45 30 V Collector current (peak value) - ' cm max. 200


    OCR Scan
    PDF OT-23 BC856 OT-23. BC857 BC858 BC856A BC856B BC857A pnp 3Fp marking 3gp marking code 3Fp 3bp sot 23 marking sot23 marking u8 marking 3Bp BC856B 3BP marking code u8 marking 3fp SOT23 SOT MARKING 3lp

    fj 3191 ah

    Abstract: No abstract text available
    Text: HIGH PfRrORMANCE ANALOG INTEG RA~EDCIPCJi'S F eatu res • Complete two-input fader with output amplifier—uses no extra components • 80 MHz bandwidth • Fast fade control speed • Operates on ± 5V to ± 15V supplies • > 60 dB attenuation @ 5 MHz A p p lication s


    OCR Scan
    PDF EL4453C EL4453C fj 3191 ah

    interfacing of RAM and ROM with 8085

    Abstract: AD7511SD DB9 pin configuration AD7571 AD7571AQ AD7571BQ AD7571JN AD7571KN AD7574 D28B
    Text: ANALOG DEVICES □ l'muo M,P-Compatible 10-Bit Plus Sign ADC FEATURES 10-Bit Plus Sign Resolution N o Missed Codes Over Full Tem p eratu re Range Conversion Tim e 80|*s D ifferential Analog V oltage Inputs, ± 1 0 V Range Serial and Parallel Data O utputs


    OCR Scan
    PDF 10-Bit AD7571 80p-s. interfacing of RAM and ROM with 8085 AD7511SD DB9 pin configuration AD7571AQ AD7571BQ AD7571JN AD7571KN AD7574 D28B

    JANS2N3741

    Abstract: ne 545 d
    Text: Microsemi PNP Transistors : P a cka g e O u tlin e M il i Data Spec Sheet : ID PD iC V c b o V c e o V e b o V C E sat @ IC <w> (A) (V) (V) (V) (V) (m A ) HFE m in (dB ) -5 100 80 5.5 1.5 2.5 70 200 23776 11.8 11.8 -5 100 80 5.5 1.5 2.5 30 90 545 23781 11.8


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value


    OCR Scan
    PDF LLS3S31 0D2MM71 BC856 BC857 BC858 OT-23 BC856/857

    3CRS12

    Abstract: No abstract text available
    Text: ^ É W f T Y P R F S S PmLUmAm CY7C9700 Fast Ethernet Repeater Controller Features • R e p e ate r lo o p b a ck m o d e fo r testin g • 13 Port IE E E 80 2.3u co m p lia n t 1 0 0B A S E -T R epeater C o n tro ller • 13 G en eral p u rp o se p ro g ram m ab le I/O pins


    OCR Scan
    PDF CY7C9700 3CRS12

    Q342

    Abstract: 89CNQ150 T-884 SLD61-6 DT 8210 89CNQ 89CNQ150SM
    Text: International [^Rectifier P D - 2.495 89CNQ150 SCHOTTKY RECTIFIER 80Amp Major Ratings and Characteristics Characteristics If<av Rectangular waveform Desciption/Features B9CNQ150 Units 80 A The 89CNQ150 center tap Schottky rectifier module has been optimized for very low forward voltage drop, with


    OCR Scan
    PDF 89CNQ150 80Amp B9CNQ150 40Apk, 125-C 89CNQ150 Q342 T-884 SLD61-6 DT 8210 89CNQ 89CNQ150SM

    Untitled

    Abstract: No abstract text available
    Text: Shunt wires SHUNT WIRE JC type D im e n s io n s m m (in.) P art No. L ad B P £ £i $,2 h T Conductor Total Cross Sectional Area (mm2) Current Rating (A) (as a reference) JC 1-L - 14 (.551) 75 (2.953) 40 (1.575) 80(3.150) 20 (.787) 40 (1.575) 20 (.787)


    OCR Scan
    PDF JC-10010 200mm JC1-200.