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Catalog Datasheet	MFG & Type	PDF	Document Tags
IEC-297-3 Abstract: colour coding mazak ral VERO ELECTRONICS pk 55 29-1251h 10020B vero pk 100 173-202287K alocrom 1200 vero pk-100 AlMgSi0,5 Text: SUBRACK SECTION INDEX A GUIDE TO THE EMC SCREENING OF SUBRACKS . PAGE 4.02 CUSTOMISING OPTIONS . 4.03 II SUBRACK SYSTEMS KM6-I Dimensional Criteria . 4.04-4.07 Toolkit CAD Package . 4.08	Original	PDF
Untitled Abstract: No abstract text available Text: 3G 3EV inverter G eneral The 3G 3EV is a m iniature variable-frequency inverterofgreatreliability due to a very high current-carrying capacity.The continuous output currentofthe 3G 3EV is about20% above the rated currentofa four-pole standard m otor. Advantages are a high starting torque even w hen fully loaded and not	Original	PDF	about20% 1010E( 1015E( 1020E( 3006E( 3008E(
7408, 7404, 7486, 7432 Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404 Text: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers	OCR Scan	PDF	TGC100 20-mA Sink/12mA TDB10LJ 120LJ TDC11LJ TDN11LJ 100MHz 7408, 7404, 7486, 7432 RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
434 289 Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20 Text: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance	OCR Scan	PDF	TGC100M 0010LJ LH110LJ 434 289 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
TSC500 Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068 Text: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories	OCR Scan	PDF	TSC500 64-mA TP000LJ TP006LJ TP008LJ TP009LJ TP010LJ 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
transistor c103m Abstract: C103M c105m W41l c105m TRANSISTOR c103m TRANSISTOR C103M equivalent 54175 4013 bt CMOS Sc 54155 Text: TGC100M MILITARY SERIES 1/im CMOS GATE ARRAYS Release 2.0, APRIL 1989 Fully Characterized for Military Applications — Product Fully Compliant with the Requirements of M IL-STD-883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance with the General Requirements of	OCR Scan	PDF	TGC100M IL-STD-883 IL-M-38510 T0010LJ LH110LJ transistor c103m C103M c105m W41l c105m TRANSISTOR c103m TRANSISTOR C103M equivalent 54175 4013 bt CMOS Sc 54155
0221l Abstract: APPLICATION NOTES CD 7474 IC bit-slice TGC119 TGC100 IPF 830 RC02X ci 7432 ttl DTN20 tsg 271 Text: TGC100 Series 1-\|im CMOS Gate Arrays RELEASE 4.0. REVISED SEPTEMBER 1991 14 Arrays with up to 26K Available Gates C E LL C O LU M N Fast Prototype Turnaround Time W IR IN G C H A N N E L Extensive Design Support -Design Libraries Compatible With Valid,u and Mentor CAE Systems	OCR Scan	PDF	TGC100 16-mA Slnk/12-mA 0221l APPLICATION NOTES CD 7474 IC bit-slice TGC119 IPF 830 RC02X ci 7432 ttl DTN20 tsg 271