IAV202
Abstract: No abstract text available
Text: Product Specification IAV202 GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079 Tel: +1 603 894 6865 Fax: +1 603 894 6866 www.gpd-ir.com [email protected] GPD OPTOELECTRONICS CORP PRODUCT SPECIFICATIONS SHEET CUSTOMER: CITY: CUST. DWG. DEVICE MARKING
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IAV202
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IAV202
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IAV204
Abstract: T046
Text: Product Specification IAV204 GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079 Tel: +1 603 894 6865 Fax: +1 603 894 6866 www.gpd-ir.com [email protected] GPD OPTOELECTRONICS CORP PRODUCT SPECIFICATIONS SHEET CUSTOMER: CITY: CUST. DWG. DEVICE MARKING
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IAV204
T0-46
15and
IAV204
T046
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IAV350
Abstract: IAV352 apd photodiode
Text: Product Specification IAV352 GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079 Tel: +1 603 894 6865 Fax: +1 603 894 6866 www.gpd-ir.com [email protected] GPD OPTOELECTRONICS CORP PRODUCT SPECIFICATIONS SHEET CUSTOMER: CITY: CUST. DWG. DEVICE MARKING
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IAV352
IAV350
15and
IAV350
IAV352
apd photodiode
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IAV204
Abstract: IAV205
Text: Product Specification IAV205 GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079 Tel: +1 603 894 6865 Fax: +1 603 894 6866 www.gpd-ir.com [email protected] GPD OPTOELECTRONICS CORP PRODUCT SPECIFICATIONS SHEET CUSTOMER: CITY: CUST. DWG. DEVICE MARKING
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IAV205
T0-46
IAV204
15and
IAV204
IAV205
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IAV203
Abstract: No abstract text available
Text: Product Specification IAV203 GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079 Tel: +1 603 894 6865 Fax: +1 603 894 6866 www.gpd-ir.com [email protected] GPD OPTOELECTRONICS CORP PRODUCT SPECIFICATIONS SHEET CUSTOMER: CITY: CUST. DWG. DEVICE MARKING
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IAV203
T0-46
15and
IAV203
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MOTOROLA 813 transistor
Abstract: h11d1 motorola transistor 813 motorola QT Optoelectronics H11D1 H11D2
Text: QT Optoelectronics MOTOROLA Order this document by H11D1/D SEMICONDUCTOR TECHNICAL DATA H11D1 * GlobalOptoisolator H11D2 6-Pin DIP Optoisolators High Voltage Transistor Output 300 Volts [CTR = 20% Min] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes
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H11D1/D
H11D1
H11D2
H11D1
H11D2
H11D1/D*
MOTOROLA 813 transistor
h11d1 motorola
transistor 813 motorola
QT Optoelectronics
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Sharp Semiconductor Lasers
Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
Text: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical
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MIL-STD-883
SMA04033
Sharp Semiconductor Lasers
AU4A
transistor QB
tensile-strength
thermopile array
BREAK FAILURE INDICATOR APPLICATIONS LIST
relay failure analysis
CRACK DETECTION PATTERNS
gold wire bound failures due to ultrasonic cleaning
2n2222 micro electronics
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APP4638
Abstract: No abstract text available
Text: Maxim > App Notes > Optoelectronics Keywords: DS1874 Mar 05, 2010 APPLICATION NOTE 4638 DS1874 quick reference guide Abstract: This reference guide provides an alternate view of the register map for the DS1874 SFP+ controller with digital LDD interface. The register information is convenient when programming the device.
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DS1874
DS1874
com/an4638
AN4638,
APP4638,
APP4638
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logic ic databook
Abstract: Motorola Optoelectronics DL118 TOSHIBA IGBT DATA BOOK motorola bipolar transistor databook DL156 thermal printer 8051 microcontroller 8048 microcontroller APPLICATION national linear application notes book DL118/d toshiba Silicon Rectifier Diodes
Text: SIRIUS The Information Tool for Electronics Commercial Documentation Distributed by Copyright 96-98 by Technical Data Systems SIRIUS The Information Tool for Electronics The Electronics is one of the fastest moving technology in the world. Quick access to
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MTIL117
Abstract: Optoelectronics Device data motorola optoelectronics
Text: MOTOROLA SEMICONDUCTOR :E TECHNICAL Order ttis document by MTlLl17/D DATA , m @;@l@l UL MT1LI17 CSA 6-Pin DIP Optoisolator Transistor Output The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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MTlLl17/D
MT1LI17
MTIL117
MTlLl17
602-2W609
MTIL117~
Optoelectronics Device data
motorola optoelectronics
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7500 IC 14 PIN
Abstract: MTIL117
Text: MOTOROLA Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA MTIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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MTIL117/D
MTIL117
MTIL117
7500 IC 14 PIN
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MOTOROLA 813 transistor
Abstract: h11d1 motorola PD3007
Text: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA T O VDE UL & CSA Order this document by H11D1/D •i SET SEMKO DEMKO NEMKO BABT H 11D 1* Glob al Optoi solator H11D2 6-Pin DIP Optoisolators High Voltage TVansistor Output 300 Volts [CTR =20% Min] "Motorola Preferred Device
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H11D1/D
H11D2
H11D1
H11D2
MOTOROLA 813 transistor
h11d1 motorola
PD3007
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esaki Diode
Abstract: No abstract text available
Text: E li OPTOELECTRONICS IMPROPER TESTING METHODS FOR LED DEVICES AN603 In any manufacturing operation it is essential that the materials used in the fabrication process meet the minimum quality specifications of the device under production. To that end, prudent manufacturers establish
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AN603
esaki Diode
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opt 300
Abstract: Optocouplers QTC qtc cny17-1 OPTOCOUPLER MARKING CODE OPT300 qtc optocoupler ST1603 9416R1 0884 qtc creepage
Text: EU VDEAPPROVED HIGH-VOLTAGE OPTOCOUPLERS OPTOELECTRONICS PACKAGE DlMANSIONS r ft Quality Technologies' optocouplers can be supplied with approval to VDE component standard 0884/08.87. rfe rft Approved parts are denoted by an "OPT 300” marking on the device, and package code R1. When ordering
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0110B
VAC/600
MCT2200
CNY17-1
9416R1
opt 300
Optocouplers QTC
qtc cny17-1
OPTOCOUPLER MARKING CODE
OPT300
qtc optocoupler
ST1603
0884 qtc
creepage
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darlington opto coupler
Abstract: opto 4N33 FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD865 FCD865D
Text: FAIRCHILD OPTOELECTRONICS OPTO COUPLERS—DARLINGTON OUTPUT MAX RATINGS @ TA = 25°C Transistor Item DEVICE NO. Diode PD mW mA ic v CEO V Vr V mA if v ISO kV 1 FCD850 250 125 30 3.0 80 1.5ac 2 FCD850C 250 125 30 3.0 80 5.0 3 FCD850D 250 125 30 3.0 80 6.0 4
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FCD850
FCD850C
FCD850D
FCD855
FCD855C
FCD855D
FCD860C131
FCD860D131
FCD865
FCD865C13'
darlington opto coupler
opto 4N33
FCD865D
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4N2S
Abstract: opto coupler 4n35 Opto Coupler 4N36 4n26 opto 4N28 opto OPTO-37 4N26 FCD830D FCD831C FCD836
Text: FAIRCHILD OPTOELECTRONICS OPTO COUPLERS—TRANSISTOR OUTPUT Cont’d MAX RATINGS @ TA = 25° C Transistor DEVICE NO. Item Diode PD mW •C mA v CEO V VR V 'F mA v ISO kV 1 FCD830D'2’ 250 25 30 3.0 60 6.0 2 FCD831'2’ 250 25 30 3.0 60 1.5ac 3 FCD831A12’
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FCD830D
FCD8312'
FCD831A12'
FCD831B2'
FCD831CÂ
FCD831D12'
FCD836
FCD836C12'
FCD836DÂ
4N25141
4N2S
opto coupler 4n35
Opto Coupler 4N36
4n26 opto
4N28 opto
OPTO-37
4N26
FCD831C
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Untitled
Abstract: No abstract text available
Text: T O X 9 10 5 L a rg e A r e a S ilic o n Q u a d ra n t P h o to d io d e «IO# Texas Optoelectronics, Inc. FEATURES DESCRIPTION The TOX 9105 is a high-speed quadrantgeometry, high-resistivity P-type silicon photodiode. This device is designed specifically
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PL370)
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MF-49
Abstract: bb4t MF-49DF-T11-002
Text: MITSUBISHI D IS C R E T E SC hlE ]) • b 2 4 ‘ìfl2lì 0 0 1 4 4 4 3 TSO ■ A m itsu b ish i OPTOELECTRONICS ELEC TR O N IC DEVICE GROUP MF-49DF-T11-002/R13-002 MIT5 Digital Optical Transmitter/Receiver Module A B S O LU TE M AXIMUM RATINGS (Ta = 25°C)
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MF-49DF-T11-002/R13-002
PRBS27-1,
MF-49DF-
MF-49DF-T11-002
MF-49DF-R13-002
MF-49
bb4t
MF-49DF-T11-002
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & *1 f t UL VDE C SA SETI ® ® ® 8EMKO DEMKO NEMKO BABT GlobalOptoisolatorTV 6-Pin DIP Optoisolators Transistor Output MCT2 MCT2E [CTR •20% Min] The M CT and M CT2E devices consist of a gallium arsenide Infrared emitting
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MOC2A40-5
Abstract: MOC2A40-10 601 Opto isolator 7255 AN1048 ACS01 motorola triac driver triac 101 amps IEEE472 RS-443
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA POWER OPTO Isolator M O C 2 A 4 0 -1 0 2 Amp Zero-Cross Triac Output M O C 2 A 4 0 -5 * This device consists of a gallium arsenide infrared emitting diode optically coupled to a zero-cross triac driver circuit and a power triac. It is capable of driving
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UL50811117
0CH1047
MOC2A40-5
MOC2A40-10
601 Opto isolator
7255
AN1048
ACS01
motorola triac driver
triac 101 amps
IEEE472
RS-443
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til117 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA UL CSA SETI BABT M TIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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MTIL117/D
TIL117
MTIL117
MTIL117
til117 motorola
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Optoelectronics c3
Abstract: No abstract text available
Text: MOTOROLA Order this document by M4N37/D SEMICONDUCTOR TECHNICAL DATA TO UL f t CSA SETI M4N37 BABT 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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M4N37/D
M4N37
M4N37
Optoelectronics c3
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M4N35
Abstract: No abstract text available
Text: MOTOROLA Order this document by M4N35/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI BABT 6-Pin DIP Optoisolators Transistor Output The M 4N 35 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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M4N35/D
M4N35
M4N35
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA *1 VDE UL CSA ® ® ® ® SETI SEMKO DEMKO NEMKO BABT G l o b a lO p to is o la to r ^ 6-Pin DIP Optoisolators Darlington Output No Base Connection MOC8030 MOC8050 [CTR s 300% Min] [CTR s 500% Min] Motorola Preferred Devices
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MOC8030
MOC8050
MOC8050
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