OMNI SPECTRA FIXTURE Search Results

OMNI SPECTRA FIXTURE Result Highlights (5)

Part	Manufacturer	Description
AXL-A	Coilcraft Inc	Test fixture for axial lead components
SMD-B	Coilcraft Inc	Test fixture for 1008 - 1812 body sizes
SMD-D	Coilcraft Inc	Test fixture for 0402 - 1812 body sizes
SMD-F	Coilcraft Inc	Test fixture for 0402 body sizes
SMD-A	Coilcraft Inc	Test fixture for 0603 - 1812 body sizes

OMNI SPECTRA FIXTURE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B 58290 siemens Abstract: circular waveguide siemens B 58290 RG232 cable ARRESTOR GAS TUBE SIEMENS tag 8634 2367-0000-54 2367-5001-54 omni spectra sma Omni-Spectra 2081-2700-00 Text: Catalog 1307191 Revised 10-00 R F C O A X I A L S O L U T I O N S F O R WIRELESS BASE STATION The new Tyco Electronics RF Coaxial Solutions for Communications Equipment catalog combines the best products from industry leading brand names like Omni SPECTRA, M/A-COM, Siemens E.C.,	Original	PDF
LDMOS 15w Abstract: TRANSISTOR Z4 ATC100A RO4350 omni spectra Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 11/28/05 MAPL000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,	Original	PDF	MAPL000817-015C00 960MHz, 26Vdc, 960MHz LDMOS 15w TRANSISTOR Z4 ATC100A RO4350 omni spectra
ATC100a Abstract: TRANSISTOR Z4 LDMOS 15w OMNI SPECTRA OZ 960 omni spectra sma transistor z9 MAPL-000817-015C00 RO4350 1206cs Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 MAPL-000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,	Original	PDF	MAPL-000817-015C00 960MHz, 26Vdc, 960MHz ATC100a TRANSISTOR Z4 LDMOS 15w OMNI SPECTRA OZ 960 omni spectra sma transistor z9 MAPL-000817-015C00 RO4350 1206cs
atc100a Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5 Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,	Original	PDF	MAPLST0817-015PP 960MHz, 26Vdc, 960MHz atc100a omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5
TRANSISTOR Z4 Abstract: CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB Text: RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 MAPLST0822-002PP Preliminary Features Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase	Original	PDF	MAPLST0822-002PP 17GHz, 28Vdc 28dBm -39dBc 11GHz PFP-16 960MHz, 26Vdc, 960MHz TRANSISTOR Z4 CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB
imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
100B270JCA500X Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282
TL12 Abstract: 2052-1618 mrf650 Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.	Original	PDF	MRF650/D MRF650 MRF650 TL12 2052-1618
microstrip Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	Original	PDF	MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
vk200 ferrite bead Abstract: MRF650 JMC5501 2052161802 RCA 1648 JMC501 TL11 TL12 VK200 c3b5 Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics	Original	PDF	MRF650/D MRF650 vk200 ferrite bead MRF650 JMC5501 2052161802 RCA 1648 JMC501 TL11 TL12 VK200 c3b5
OMNI SPECTRA Abstract: Rogers 6010.5 ATC100A PH2323-3 882 transistor Text: PH2323-3 CW Power Transistor 3.5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN Silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors	Original	PDF	PH2323-3 OMNI SPECTRA Rogers 6010.5 ATC100A PH2323-3 882 transistor
882 transistor Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture Text: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors	Original	PDF	PH2323-5 882 transistor omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
MJD310 Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282 Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
NPN microwave power transistor 865 Abstract: omni spectra sma ATC100A PH2323-1 Noryl 1075 Text: PH2323-1 CW Power Transistor 1W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • NPN silicon microwave power transistor Common base configuration Class C operation Interdigitated geometry Diffused emitter ballasting resistors	Original	PDF	PH2323-1 NPN microwave power transistor 865 omni spectra sma ATC100A PH2323-1 Noryl 1075

Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15030/D MRF15030 MRF15030/D*
178 09T Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
power tr unit j122 5 pin Abstract: power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) GX-0300-55-22, MRF15090 power tr unit j122 5 pin power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170
capacitor mallory Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
omni spectra sma Abstract: transistor n03 PH2856 Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry	OCR Scan	PDF	PH2856-3 Sb42205 0D013S3 TT50M50A ATC100A Sb4E20S Q0D1324 omni spectra sma transistor n03 PH2856
DIODE ku 1490 Abstract: capacitor mallory mallory 170 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The R F Line MRF15090 N P N Silico n RF Pow er T ran sistor Designed for 26 volts microwave large-signal, common emitter, class A and class A B linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	BD135) BD136) GX-0300-55-22, F15090 DIODE ku 1490 capacitor mallory mallory 170
mallory 170 Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170
MOTOROLA ELECTROLYTIC CAPACITOR Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM	OCR Scan	PDF	MRF15090/D MOTOROLA ELECTROLYTIC CAPACITOR
DIODE ku 1490 Abstract: k 246 transistor 1.4901 bd135 equivalent Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM	OCR Scan	PDF	MRF15090/D DIODE ku 1490 k 246 transistor 1.4901 bd135 equivalent

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OMNI SPECTRA FIXTURE Search Results

OMNI SPECTRA FIXTURE Result Highlights (5)

OMNI SPECTRA FIXTURE Datasheets Context Search

B 58290 siemens

LDMOS 15w

ATC100a

atc100a

TRANSISTOR Z4

imd 5210

100B270JCA500X

TL12

microstrip

vk200 ferrite bead

OMNI SPECTRA

882 transistor

MJD310

NPN microwave power transistor 865

Untitled

178 09T

rohm mtbf

power tr unit j122 5 pin

capacitor mallory

omni spectra sma

DIODE ku 1490

mallory 170

MOTOROLA ELECTROLYTIC CAPACITOR

DIODE ku 1490