Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS DOME .183 .186 FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package
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880nm
ODD-45W
OD-880F
100Hz
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nir emitter leds with 700 to 900 nm
Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
Text: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety
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660nm
ODD-660W
nir emitter leds with 700 to 900 nm
ODD-660W
ansi z136.1 -vcsel
photodiode 650nm nep
UV led diode 200 nm peak 1W
OD-850-30-030
OD-800W
ODD-42WB
"infrared led" 800 nm 980 nm
led nir
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS .183 .186 ANODE CASE .209 .220 .015 .152 .154 .100 .041 .017 .030 .040 CATHODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. .036 45° .197
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880nm
ODD-45W
OD-880F
100mA
100Hz
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OD-880L
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE CASE .015 .183 .152 .186 .156 FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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880nm
ODD-45W
OD-880L
100Hz
OD-880L
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357 opto
Abstract: 650NM photodiode IR-led 780 nm ODD-45W ODD-95W
Text: HIGH-SENSITIVITY GaAlAs PHOTODIODE .006 MAX GLASS ABOVE CAP TOP EDGE .120 45 W .095 45 W ISOL.100 .085 ODD-45W .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .187 .156 .181 .152 .215 .220 .012 MAX GLASS ABOVE CAP TOP EDGE CATHODE .500 MIN. .111 95 W .095 95 W ISOL.098
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ODD-45W
ODD-95W
ODD-45W/95W
880nm
357 opto
650NM photodiode
IR-led 780 nm
ODD-45W
ODD-95W
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2SK147
Abstract: low noise ir photodiode amplifier ir photodiode amplifier bpw21 amplifier fast photodiode amplifier 2SK147 equivalent bpw21 op SFH213 BPW21 BPW34B
Text: DESIGN IDEAS 1MΩ Transimpedance Amplifier Achieves Near-Theoretical Noise Performance, 2.4GHz Gain Bandwidth, with Large-Area Photodiodes by Glen Brisebois transimpedance circuit’s noise gain, which applies to voltage noise but not to current noise or resistor noise,
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500pF
100kHz,
130nV/Hz
41nV/Hz
130nV/Hz/314)
100kHz.
2SK147
SFH213
BPW34B
ODD45W
2SK147
low noise ir photodiode amplifier
ir photodiode amplifier
bpw21 amplifier
fast photodiode amplifier
2SK147 equivalent
bpw21 op
SFH213
BPW21
BPW34B
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OD-880F
Abstract: OD-880F1 ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME .183 .186 OD-880F ANODE CASE .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880F
880nm
ODD-45W
OD-880F1
100Hz
OD-880F
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OD-880W
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 OD-880W FEATURES 1.00 MIN. ANODE CASE • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880W
880nm
ODD-45W
100Hz
OD-880W
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Untitled
Abstract: No abstract text available
Text: LT6013/LT6014 Single/Dual 145µA, 9.5nV/√Hz, AV ≥5, Rail-to-Rail Output Precision Op Amps FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 35µV Maximum Offset Voltage LT6013A Low 1/f Noise: 200nVP-P (0.1Hz to 10Hz) 40nVRMS (0.1Hz to 10Hz)
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LT6013/LT6014
LT6013A)
200nVP-P
40nVRMS
250pA
500pF
120dB
OT-23
LT1881/LT1882
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Untitled
Abstract: No abstract text available
Text: DETECTORS Opto Diode has developed the first commercially available GaAlAs detectors that can compete with standard silicon photodiodes in terms of size, cost, responsivity and noise. These detectors have the added benefit of a responsivity range that is nearly
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880nm
RG850
1071H
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ODD-45W
Abstract: OD-148-C OD-148W OD-24F OD-880 OD-880E OD-880F OD-880F1 OD-880L OD-880W
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880W
880nm
ODD-45W
100Hz
OD-148-C
OD-148W
OD-24F
OD-880
OD-880E
OD-880F
OD-880F1
OD-880L
OD-880W
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 1.00 MIN. OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package
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OD-880W
880nm
ODD-45W
100Hz
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OD-880L
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE CASE .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880L
880nm
ODD-45W
100Hz
OD-880L
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package
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OD-880W
880nm
ODD-45W
100mA
100Hz
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OD-880W
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 OD-880W FEATURES 1.00 MIN. ANODE CASE • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880W
880nm
ODD-45W
100mA
100Hz
OD-880W
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OD-24F
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-24F ANODE CASE • High current capability .209 .212 .015 • 880nm peak emission for optimum matching with ODD-45W photodiode • Hermetically sealed TO-46 package .183 .186 .152 .154 • Narrow angle of emission
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OD-24F
880nm
ODD-45W
200mA
100Hz
OD-24F
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mmbd3904
Abstract: 2SK147 2SK147 equivalent wheatstone bridge with thermistor BPW34B BPW21 Wheatstone Bridge amplifier siemens thermocouple FD1500W Correlated Double Sampling
Text: DESIGN IDEAS Using Bipolar Preamplifiers in an LTC2411-Based Correlated Double Sampling Scheme Produces a Noise by Derek Redmayne Floor of Under 100nVRMS Introduction AC excitation. Putting preamplification in front of 24-bit delta sigma converters such as the LTC2410 or
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LTC24
100nVRMS
24-bit
LTC2410
LTC2411
2SK147
SFH213
BPW34B
ODD45W
FD1500W
mmbd3904
2SK147
2SK147 equivalent
wheatstone bridge with thermistor
BPW34B
BPW21
Wheatstone Bridge amplifier
siemens thermocouple
FD1500W
Correlated Double Sampling
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OD-24F2
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-24F2 ANODE CASE .015 • High current capability • 880nm peak emission for optimum matching with ODD-45W photodiode .209 .220 • Hermetically sealed TO-46 package .183 .186 .152 .154 • Narrow angle of emission
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OD-24F2
880nm
ODD-45W
200mA
100mA
100Hz
OD-24F2
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OD-880F
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .183 .186 ANODE CASE .015 .152 .154 OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880F
880nm
ODD-45W
100Hz
OD-880F
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Si IR-Photodiode
Abstract: LT6010 LT6011 LT6013 LT6013ACDD LT6013AIDD LT6013CDD LT6013IDD LT6014 HW-108A
Text: LT6013/LT6014 Single/Dual 145µA, 9.5nV/√Hz, AV ≥5, Rail-to-Rail Output Precision Op Amps U FEATURES DESCRIPTIO • The LT 6013 and LT6014 op amps combine low noise and high precision input performance with low power consumption and rail-to-rail output swing. The amplifiers are
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LT6013/LT6014
LT6014
LT6013A)
200nVP-P
40nVRMS
250pA
500pF
OT-23
LT1881/LT1882
Si IR-Photodiode
LT6010
LT6011
LT6013
LT6013ACDD
LT6013AIDD
LT6013CDD
LT6013IDD
HW-108A
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OD-880L
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE CASE • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .015 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880L
880nm
ODD-45W
100Hz
OD-880L
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OD-880W
Abstract: ODD-45W
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880W
880nm
ODD-45W
100Hz
OD-880W
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. ANODE CASE GLASS DOME OD-880F • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .015 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880F
880nm
ODD-45W
OD-880F1
OD-880F
100Hz
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAIAs IR EMITTERS OD-24F FEATURES • High current capability • 880nm peak emission for optimum matching with ODD-45W photodiode • Hermetically sealed TO-46 package • Narrow angle of emission All surfaces are gold plated. Dimensions are nominal
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OCR Scan
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OD-24F
880nm
ODD-45W
100mA
200mA
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