P-MUSB-A511-XX
Abstract: usb VERTICAL receptacle vertical pcb mount usb MUSB-2A111-024-BP
Text: A B C E D H G F REVISIONS 24.00 .945 REV. DESCRIPTION, ECN, EAR NO. DATE APPROVED F PRODUCT DRAWING EAR 13774 OCT08/10 K.L. 2.80±0.30 .110±.012 1 1 ORDERING CODE: M U S B - A 5 1 1 - X X 18.00±0.20 .709±.008 6.00 .236 9.00 .354 14.00 .551 SERIES, RUGGED USB
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OCT08/10
DEC13/05
P-MUSB-A511-XX
P-MUSB-A511-XX
usb VERTICAL receptacle
vertical pcb mount usb
MUSB-2A111-024-BP
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VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
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VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
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Untitled
Abstract: No abstract text available
Text: TSB43Ex4x www.ti.com SLLA275C – APRIL 2008 – REVISED FEBRUARY 2010 IEEE 1394a-2000 CONSUMER ELECTRONICS SOLUTION Data Sheet Extract, Rev 1.2 FEATURES 1 • • • IEEE 1394 Features – Integrated 400/200/100-Mbps 2-Port/3-Port PHY – Compliant to IEEE Std 1394-1995 and
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TSB43Ex4x
SLLA275C
1394a-2000
400/200/100-Mbps
1394a-2000
TSB43EA42/43
TSB43EC42/43
AES128
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aon6718
Abstract: AON6718L
Text: AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is
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AON6718L
AON6718L
aon6718
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AOL1718
Abstract: M2975
Text: AOL1718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is
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AOL1718
AOL1718
M2975
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AO4406AL
Abstract: AO4406
Text: AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
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AO4406AL
AO4406AL
4406AL
AO4406
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Untitled
Abstract: No abstract text available
Text: SF16C01CF THRU SF16C06CF Glass Passivated Super Fast Recovery Rectifier Voltage Range 50 to 600 V Current 16.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability
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SF16C01CF
SF16C06CF
ITO-220AB
MIL-STD-202
SF16C01CF-SF16C03CF
SF16C04CF-SF16C05CF
300uS
50mVp-p
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SF8A01F
Abstract: No abstract text available
Text: SF8A01F THRU SF8A06F Glass Passivated Super Fast Recovery Rectifier Voltage Range 50 to 600 V Current 8.0 Ampere ITO-220AC .185 4.70 .175(4.44) MAX.412(10.5) DIA .140(3.56) .130(3.30) .140(3.56) .130(3.30) .594(15.1) .587(14.9) PIN .108(2.75) .098(2.50) 2
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SF8A01F
SF8A06F
ITO-220AC
MIL-STD-202
SF8A01F-SF8A03F
SF8A04F-SF8A05F
300uS
50mVp-p
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SCT-595
Abstract: 78-AD
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPW05980
SCT-595
Oct-08-1999
EHB00047
EHB00048
SCT-595
78-AD
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Untitled
Abstract: No abstract text available
Text: TSB43Ex4x www.ti.com SLLA275C – APRIL 2008 – REVISED FEBRUARY 2010 IEEE 1394a-2000 CONSUMER ELECTRONICS SOLUTION Data Sheet Extract, Rev 1.2 FEATURES 1 • • • IEEE 1394 Features – Integrated 400/200/100-Mbps 2-Port/3-Port PHY – Compliant to IEEE Std 1394-1995 and
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TSB43Ex4x
SLLA275C
1394a-2000
400/200/100-Mbps
1394a-2000
TSB43EA42/43
TSB43EC42/43
AES128
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ga sot-89
Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Text: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C
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VPS05162
EHA07007
OT-89
EHB00094
EHB00095
EHB00096
EHB00097
ga sot-89
SOT89 marking GA
diode 78a
SOT89 marking GD
MARKING GA SOT-89
marking GC diode
baw 78b
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VSO05561
Abstract: A7s marking diode
Text: BAV 99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol
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VSO05561
EHA07181
OT-323
Oct-08-1999
EHB00078
EHB00075
VSO05561
A7s marking diode
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Untitled
Abstract: No abstract text available
Text: BAS 16-02W Silicon Switching Diode • For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS 16-02W 3 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current
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6-02W
VES05991
SCD-80
EHB00025
Oct-08-1999
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79a diode
Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Text: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2
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VPS05162
EHA07003
OT-89
EHB00098
EHB00099
EHB00100
EHB00101
79a diode
marking A1 SOT89
MARKING a1 d sot 89
a2 sot-89
w351
Marking gg SOT89
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Untitled
Abstract: No abstract text available
Text: SF10C01CF THRU SF10C06CF Glass Passivated Super Fast Recovery Rectifier Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic ITO-220AB
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SF10C01CF
SF10C06CF
ITO-220AB
MIL-STD-202
73grams
86TYPICAL
SF10C04CF-SF10C05CF
SF10C01CF-SF10C03CF
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hfr12a06
Abstract: No abstract text available
Text: HFR12A06 Glass Passivated Hyper Fast Recovery Rectifier Voltage Range 600 V Current 12.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 22ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45
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HFR12A06
O-220AC
MIL-STD-202
50mVp-p
OCT-08
hfr12a06
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Untitled
Abstract: No abstract text available
Text: コンプリメンタリーパワー MOSFET ELM34605AA-N •概要 ■特長 ELM34605AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。
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ELM34605AA-N
-55Id
P3503QVG
OCT-08-2004
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复合
Abstract: ELM34605AA
Text: 复合沟道 MOSFET ELM34605AA-N •概要 ■特点 ELM34605AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 25mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)
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ELM34605AA-N
FieldELM34605AA-N
P3503QVG
OCT-08-2004
复合
ELM34605AA
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SOT JPs
Abstract: VPS05178 EHA07008
Text: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05178
EHA07008
OT-143
EHN00019
100ns,
Oct-08-1999
EHB00102
EHB00104
EHB00103
SOT JPs
VPS05178
EHA07008
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AOD4186
Abstract: AOD418
Text: AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for low voltage inverter applications.
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AOD4186
AOD4186
O-252
AOD418
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TMS4464
Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Text: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure
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SMYD002
o184-464PP-142M
iS-146
TMS4464
TMS 2764 Texas Instruments IC
mk4564
mcm6256
tms4500a
Fuji Electric tv schematic diagram
ET 439 power module fuji
mcm6665
74L5138
TMS4500
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4-pin 27mhz crystal
Abstract: No abstract text available
Text: ASAHI KASEI EMD CORPORATION Low Power Multiclock Generator with VCXO AK8130D Features Description The AK8130D is a member of AKEMD’s low power multi clock generator family designed for a feature rich DTV or STB, requiring a range of system clocks with high performance. The AK8130D
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AK8130D
27MHz
27MHz-Reference
000MHz
110ppm
1758MHz
16-pin
AK8130D
MS1026-E-00
4-pin 27mhz crystal
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34605AA-N •General Description ■Features ELM34605AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)
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ELM34605AA-N
ELM34605AA-N
FieldELM34605AA-N
P3503QVG
OCT-08-2004
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1B01
Abstract: AMS 2418
Text: 5 T H IS D RAW ING IS U N P U B L IS H E D . COPYRIG HT - 4 3 2 R E LE A S E D FO R PU B LIC A TIO N BY TYCO ELECTRONICS CORPORATION. Dl ALL INTERNATIONAL RIGHTS RESERVED. DO R EVISIO N S LTR D E S C R IP T IO N REV PER ECO 2. 3. RAISED NUMBERS FOR ID EN TIFIC ATIO N O F
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GST-40F.
011PHW
1B01
AMS 2418
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