5669.16
Abstract: dold OA 5669 902-790 M2871 10-RELAY en 60 ET 1415.041 OW5669
Text: Safety relay OA / OW 5669 • according to EN 50 205, IEC/EN 60 255, IEC 60 664-1 • with positively driven contacts • wash proof model as option • double and reinforced insultaion between contact sets according to EN 50 178 • low rated power consumption
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ZH1/457
M2980
D-78114
5669.16
dold OA 5669
902-790
M2871
10-RELAY
en 60
ET 1415.041
OW5669
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ow 5669.12
Abstract: dold OA 5669 5669.16 DOLD oa 5669.12 OA 5669.12 5669.12 3061L1 3006L1 3033L1 OA 566912
Text: Safety relay OA/OW 5669._ _ /3_ _ _ • according to EN 50 205, IEC/EN 60 255, IEC 60 664-1 • for high ambient temperature up to + 85°C • with positively driven contacts • wash proof model as option • double and reinforced insulation between contact sets according to EN 50 178
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ZH1/457
M2980
D-78114
ow 5669.12
dold OA 5669
5669.16
DOLD oa 5669.12
OA 5669.12
5669.12
3061L1
3006L1
3033L1
OA 566912
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MP111U
Abstract: piezo inkjet printer circuit diagram
Text: MP111 MP111 P r o d uMP111 c t TI ne cn ho nv oa lt oi og ny F r o m Power Operational Amplifier FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT- 50 AMP PULSE OUTPUT, 15 AMP CONTINUOUS • 170 WATT DISSIPATION CAPABILITY • 130 V/uS SLEW RATE
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uMP111
MP111
MP111
500kHz
34-PIN
MP111U
MP111U
piezo inkjet printer circuit diagram
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
DBF20C
DBF20G
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DBF20
Abstract: DBF20C DBF20G
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
DBF20
DBF20C
DBF20G
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
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bridge RECTIFIER GI
Abstract: DBF20 DBF20C DBF20G
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
bridge RECTIFIER GI
DBF20
DBF20C
DBF20G
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DIODE OA-200
Abstract: diode oa202 OA202 OA200 QA202 bjj current shunt QA200 OA-200 Scans-0015451 OA200 diode
Text: OA 200 OA 202 SILICON DIODES Silicon alloyed general purpose diodes in a subminiature all gla ss DO-7 enve lope . OA200 OA202 50 150 Continuous reverse voltage Vr max. Repetitive peak forward current ! f RM max. 250 mA Thermal resistance from junction to ambient
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OA200
OA202
7Z05MÂ
7Z05689â
DIODE OA-200
diode oa202
OA202
OA200
QA202
bjj current shunt
QA200
OA-200
Scans-0015451
OA200 diode
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9904 diode
Abstract: diode kp 7Z25
Text: niCROSEMI CORP/ MICRO SbE » • bllS'iO? 0001331 7 0 4 ■ MÛL M IC R 0 QS E MUIC OA L IT Y / N D U C TO R , INC Quick Connect Diode kp Series, 50-1000V Rugged Construction Convenient Mounting Quick Connect %" Tabs Higher Current Rating Than Most Axials
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0-1000V
1000i
9904 diode
diode kp
7Z25
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Untitled
Abstract: No abstract text available
Text: urm TECHNOLOGY LT2078/LT2079 Micropower, Dual and Quad, Single Supply, Precision Op Amps F6ATUACS DCSCRIPTIOH • SO Package with Standard Pinout ■ Supply Current per Amplifier: 50|oA Max ■ Offset Voltage: 70|xV Max The LT 2078 is a micropower dual op amp in 8-pin small
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LT2078/LT2079
LT2079
14-pin
250pA
200kHz
LT1211/LT1212
14MHz,
LT1490/LT1491
50jiA
200kHz
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Untitled
Abstract: No abstract text available
Text: ^ = T SGS-THOMSON D lsi S IIL[iCTIs! iD©S 74AC257 QUAD 2 CHANNEL MULTIPLEXER (3-STATE) . . . . . . HIGH SPEED: tPD =4.5 ns (TYP.) at Vcc = 5V LOW POWER DISSIPATION: Ice = 8 |oA (MAX.) at T a = 25 °C HIGH NOISE IMMUNITY: V nih = V nil = 28% Vcc (MIN.) 50£2 TRANSMISSION LINE DRIVING
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74AC257
AC257
P013H
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Untitled
Abstract: No abstract text available
Text: S G S -T tiO M S O N 5 7 . L4992 R flD g [S i llL i(g r a © lii! lD (g i TRIPLE OUTPUT POWER SUPPLY CONTROLLER • DUAL PWM BUCK CONTROLLERS (3.3V and 5.1V ■ 12V/120m ALINEAR REGULATOR i DUAL SYNCH RECTIFIERS DRIVERS ■ 96% EFFICIENCY ACHIEVABLE ■ 50|oA (@ 12V) STAND BY CONSUMPTION
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L4992
2V/120m
TQFP32
L4992
TQFP32
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Untitled
Abstract: No abstract text available
Text: Ö Q u a l it y S e m ic o n d u c t o r , I n c . 3.3V CMOS 16-Bit Buffer/Line Driver QS74FCT2X3244 FEATURES/BENEFITS DESCRIPTION • Pin and function compatible to the QSFCT2X244 Industrial temperature: -4 0°C to +85°C Available in 40-pin QVSOP Undershoot clamp diodes on all inputs
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16-Bit
QS74FCT2X3244
QSFCT2X244
40-pin
FCT2X3244
2X3244
MDSL-00063-01
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Untitled
Abstract: No abstract text available
Text: QSFCT2X3245 PRELIMINARY Q 3.3 Volt CMOS 16-Bit Tranceiver QS74FCT2X3245 FEATURES/BENEFITS • • • • • Pin and function compatible to the QSFCT2X245 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs Low power QCMOS: 0.07 |aW typ static
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QSFCT2X3245
16-Bit
QS74FCT2X3245
QSFCT2X245
40-pin
FCT2X3245
2X3245
2X3245A
MDSL-00062-00
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keramische Werke Hermsdorf
Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Text: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß spannung U a k IVI Durchlaß strom Sperr spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr spannung jEä max. zuass. Durchlaß strom UKAma* IVI ^AKmax !mAl Bau
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OA182
Abstract: No abstract text available
Text: OA 182 Germanium-Kleinflächendiode Germanium small junction diode Anwendungen: Allgemein, für hohe Betriebsspannungen Applications: General purpose, for high supply voltages Features: Besondere Merkmale: • Hoher Durchlaßstrom • High forward current
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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OA2 tube
Abstract: OA2 diode oa2, tube tube oa2 la tube Scans-0017244
Text: M AZDA BELMU DIODE A GAZ Stabilisateur de tension à cathode froide OA2 C A R A C T E R IS T IQ U E S G E N E R A LE S Atmosphère gazeuse Ampoule .
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25milliampÃ
OA2 tube
OA2 diode
oa2, tube
tube oa2
la tube
Scans-0017244
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RB040-40T
Abstract: Schaffner load dump generator rb040 RB04
Text: SCS-THOMSON iije r a « ® Application Specific Discretes A.S.D. R B 0 4 0 -40T REVERSED-BATTERY AND OVERVOLTAGE PROTECTION FEATURES . PROTECTION AGAINST”LOAD DUMP” EFFECT • DIODE TO GUARD AGAINST BATTERY REVERSAL . MONOLITHIC STRUCTURE FOR GREATER
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products Q u a l it y Semiconductor, I nc. q s 34x s t 257 High-Speed CMOS SynChroSwitCh 32:16 MUX/DemUX With Active Terminators in f o ardmva ™ n FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional signal flow
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SynChroSwitChTM32
80-pin
MDSL-00214-00
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CE109
Abstract: No abstract text available
Text: OSE-2W4 INFRARED EMITTING DIODE The OSR-2W4 is a axial lead type infrared emitting diode is made with GaAlAs/GaAs substrate LED die. DIMENSIONS Unit: m/m .Ui01. FEATURES • High Luminous intensity 2 A5±0.1 WATER CLEAR 7 /TIN P LA T IN G TIN PLA T IN G \
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Untitled
Abstract: No abstract text available
Text: HZS-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise HITACHI ADE-208-122A Z Rev 1 Features • Vz-Iz characteristics are semilogarithmic linear from IZ=lnA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients .
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ADE-208-122A
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1k27a
Abstract: K4242 k424 1K41 1h44 1K413 1H445
Text: devices TOLL FREE NUMBER 800-777-3960 T - o i ' ù t silicon diodes c o n t’d M u dw n f u k C um it p » CMrfèfrt T iff • UK56 8 a 150 IX « » 1.0 1 M * IM m t » w K4M H\62A »M 2M 1.0 1.0 i.o 5 2 5 2 40 0) is 5 l:o 200 HO N 4U *M H « 100 1:3 100
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J50W-Â
1k27a
K4242
k424
1K41
1h44
1K413
1H445
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Untitled
Abstract: No abstract text available
Text: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I Features • Surface mount device • Outline Drawing ■ Marking • Lo w V f • Super high speed switching - CATHODE MARKING - SYM BOL • High reliability by planer design ■ ,-V L I ED I 14 ■- MONTH
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SC802-09
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